Fuji Electric Co., Ltd.

Johnan Manufacturing Inc.

Fuji Electric Device Technology Co., Ltd.

Fuji Electric Systems Co. Ltd.

Koji Sasaki

Takashi Kobayashi

Tsunehiro Nakajima

Hiroki Wakimoto

Takashi Hayashi

Kenichi Kazama

Akio Shimizu

Kazuo Matsuzaki

Naoki Ide

Yasuharu Mikoshiba

Yuta Sakurai

Masahiro Kato

Harumitsu Nakamura

A vehicle hood lock device includes a base including a groove for entry of a striker, a latch that pivots between a restraining position and a release position, a locking lever engaging the latch, a torsion spring causing the latch to pivot in a direction toward the release position, and a sub-plate fixed to the base by a latch pin supporting the latch and a locking pin supporting the locking lever. The torsion spring includes a cylindrical portion. The sub-plate integrally includes a basal portion, a circumferential wall portion rising up from the basal portion in a pivot axis direction of the latch, facing the cylindrical portion in a radial direction thereof and restricting movement of the torsion spring in the radial direction, and a brim portion protruding outward in the radial direction from the circumferential wall portion and restricting movement of the torsion spring in the pivot axis direction.

Vehicle hood lock device

A vehicle lid lock device includes a locking member for locking a lid provided on a vehicle, a housing member in which an insertion hole is formed into which the locking member is inserted and which houses the locking member enabled to move backward and forward; and an annular seal member that is housed in a housing portion of the housing member and that seals a gap between an inner surface of the insertion hole of the housing member and an outer surface of the locking member. The seal member includes a main body including an inner peripheral surface with an inner diameter larger than an outer diameter of the locking member, and a lip portion that protrudes radially inward from the inner peripheral surface of the main body and that is in slide contact with the outer surface of the locking member.

Vehicle lid lock device

A semiconductor device includes a semiconductor substrate which functions as an ndrift layer, a trench IGBT formed in the front surface, an interlayer insulator film, and a metal electrode layer on the interlayer insulator film. There is a contact hole in the interlayer insulating film which has a first opening formed on the metal electrode layer side and a second opening on the semiconductor substrate side. Width wof the first opening on the metal electrode layer side is wider than width wof first opening on the semiconductor substrate side, in a direction perpendicular to the extending direction of the trench in the planar pattern of trenches. The metal electrode layer is connected to a p-type channel region and an nsource region via the contact hole. The method of manufacturing improves the reliability of the device.

Semiconductor device and the method of manufacturing the same

A semiconductor device, including a silicon substrate having a first major surface and a second major surface, a front surface device structure formed in a region of the first major surface, and a rear electrode formed in a region of the second major surface. The rear electrode includes, as a first layer thereof, an aluminum silicon film that is formed by evaporating or sputtering aluminum-silicon onto the second major surface, the aluminum silicon film having a silicon concentration of at least 2 percent by weight and a thickness of less than 0.3 &#x3bc;m.

Semiconductor device with an electrode including an aluminum-silicon film

A semiconductor device includes a semiconductor substrate; a metal electrode wiring laminate on the semiconductor substrate, the metal electrode wiring laminate being patterned with a predetermined wiring pattern; the metal electrode wiring laminate including an undercoating barrier metal laminate and aluminum or aluminum alloy film on the undercoating barrier metal laminate; and organic passivation film covering the metal electrode wiring laminate, wherein the barrier metal laminate is a three-layered laminate including titanium films sandwiching a titanium nitride film. The semiconductor device according to the invention facilitates improving the moisture resistance of the portion of the barrier metal laminate exposed temporarily in the manufacturing process, facilitates employing only one passivation film, facilitates preventing the failures caused by cracks from occurring and the failures caused by Si nodules remaining in the aluminum alloy from increasing.

A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 &#x3bc;m.

Method of producing a semiconductor device with an aluminum or aluminum alloy electrode

A method of producing a semiconductor device having a thickness of 90 &#x3bc;m to 200 &#x3bc;m and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 &#x3bc;m to 1.0 &#x3bc;m and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.

Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode

A semiconductor device includes a semiconductor substrate which has first and second principal surface regions; an insulated gate structure which is formed in the first principal surface region; a back surface region semiconductor layer which is formed in the second principal surface region and has a thickness of at most 5 &#x3bc;m; an outermost metal film; and a back surface electrode which is formed in the second principal surface region between the back surface region semiconductor layer and the outermost metal film and which is composed of a plurality of films which are laminated and include a stress relaxation film so that false judgment of chip quality based on leakage current measurements during manufacturing is reduced particularly when dust is present and skews leakage current measurements due to strain on the wafer and the piezoelectric effect produced.

Growing community of inventors

Nagano, Japan

Koji Sasaki