Toyoda Gosei Co., Ltd.

Meijo University

Toyota Gosei Co., Ltd.

Koji Okuno

Yasuhisa Ushida

Atsushi Miyazaki

Naoki Shibata

Hiroshi Amano

Takahide Oshio

Naoyuki Nakada

Yoshiki Saito

Shugo Nitta

Kazuki Nishijima

Yusuke Toyoda

Isamu Akasaki

Shiro Yamazaki

Tetsuya Takeuchi

Seiji Nagai

Koichi Goshonoo

Motoaki Iwaya

Satoshi Kamiyama

Takayuki Sato

Tetsuya Taki

Masato Aoki

Yasuhide Yakushi

Shinya Boyama

Koichi Mizutani

Shunsuke Aoyama

Kazuyoshi Iida

Masaki Oya

Yohei Samura

Mitsuhisa Narukawa

Shuhei Yamada

To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Semiconductor device and method for producing semiconductor device

The present invention provides a method for producing a Group III nitride semiconductor device which can relax strain between a Group III nitride semiconductor layer containing In and a semiconductor layer adjacent thereto, and a production method therefor. The well layer is a Group III nitride semiconductor layer containing In. The barrier layer is a Group III nitride semiconductor layer. The well layer and the barrier layer are brought into contact with each other in at least one of growing a well layer and growing a barrier layer. A gas containing hydrogen gas as a carrier gas is used in growing a well layer and growing a barrier layer. In growing a barrier layer, the flow rate of hydrogen gas is higher than the flow rate of hydrogen gas in growing a well layer.

Group III nitride semiconductor device and production method therefor

The method comprises: forming an Al layer or Al droplets on a surface of a substrate by flowing an organic metal gas containing Al without flowing an ammonia gas; forming an AlN buffer layer on the Al layer or Al droplets by flowing the organic metal gas containing Al and the ammonia gas, the Al layer or Al droplets remaining as a metal under the AlN buffer layer; forming the Group III nitride semiconductor on the AlN buffer layer; and peeling the Group III nitride semiconductor in a place of the Al layer or Al droplets from the substrate.

Production method for group III nitride semiconductor

There is provided a method for producing a semiconductor device, the method facilitating removal of a growth substrate from a semiconductor layer. A decomposition layer formation step involves extension of a plurality of threading dislocations during growth of a decomposition layer. A bridging portion formation step involves exposure of the threading dislocations to the surface of a bridging portion. A decomposition step involves widening of the threading dislocations exposed to the surface of the bridging portion, to thereby provide a plurality of through holes penetrating the bridging portion; decomposition of at least a portion of the decomposition layer exposed in the interior of the through holes; and discharge of a decomposition product generated through decomposition of the decomposition layer via the through holes to the outside of the bridging portion, to thereby provide a first void in a portion of a region where the decomposition layer has remained.

Production method for semiconductor

There are provided a Group III nitride semiconductor light-emitting device having complicated irregularities on the light extraction surface. The light-emitting device comprises a substrate, a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer. The light-emitting device has protrusions extending upward from the surface of the n-type semiconductor layer on the n-type semiconductor layer. Each protrusion has a wall portion disposed so as to intersect with the surface of the n-type semiconductor layer. The wall portion has a first surface facing the n-type semiconductor layer. An angle between the first surface and the n-type semiconductor layer is 10&#xb0; to 85&#xb0;.

Group III nitride semiconductor light-emitting device

To provide a method for producing a Group III nitride semiconductor light-emitting device, which allows the formation of a high-temperature AlN buffer layer on an uneven substrate. This production method comprises forming an Al layer or Al droplets on the uneven shape of the uneven substrate, forming an AlN buffer layer while nitriding the Al layer; and forming a Group III nitride semiconductor layer on the AlN buffer layer. In the forming an Al layer, the internal pressure of a furnace is 1 kPa to 19 kPa, the temperature of the uneven substrate is 900&#xb0; C. to 1,500&#xb0; C., and an organic metal gas containing Al is supplied at a flow rate of 1.5&#xd7;10mol/min or more.

Method for producing group III nitride semiconductor light-emitting device

There are provided a method for producing a semiconductor structure exhibiting excellent crystallinity by preventing the occurrence of a strain, and a method for producing a semiconductor device. The semiconductor structure production method includes a decomposition layer formation step, a bridging portion formation step, a decomposition step, and a semiconductor layer formation step. In the decomposition layer formation step, a plurality of threading dislocations are extended during growth of a decomposition layer. In the bridging portion formation step, the threading dislocations are exposed to the surface of the bridging portion. In the decomposition step, the threading dislocations exposed to the surface of the bridging portion are widened to thereby provide a plurality of through holes penetrating the bridging portion, and the decomposition layer exposed in the interior of the through holes is decomposed.

Production method for semiconductor structure and production method for semiconductor device

There are provided a semiconductor structure exhibiting excellent crystallinity by preventing the occurrence of a strain, and a semiconductor device. The semiconductor structure comprises a substrate, a bridging portion bridged to the substrate, a semiconductor layer formed on the bridging portion, a void defined by the substrate and the bridging portion. The bridging portion has a plurality of through holes. The through holes are blocked with the semiconductor layer. Therefore, the semiconductor layer does not have a through hole.

Semiconductor structure and semiconductor device

There are provided a semiconductor array and a method for producing a micro device, in which the semiconductor laminate used in the micro device can be readily separated from the substrate. The semiconductor array includes a substrate, a bridging portion bridged to the substrate, a plurality of semiconductor laminates arranged on the bridging portion, and first voids defined by the substrate and the bridging portion. The bridging portion has a plurality of through holes formed at least one of the leg portion and the top portion. The first void communicates with the outside of the semiconductor array via the through holes. Each of the semiconductor laminates is in direct contact with each of the top portions.

Semiconductor array and production method for micro device

A method for producing a Group III nitride semiconductor comprising forming mesas on a main surface of a substrate, and growing Group III nitride semiconductor in a c-axis direction thereof, wherein the plane most parallel to the side surfaces of the mesas or the dents among the low-index planes of growing Group III nitride semiconductor is a m-plane (1-100), and when a projected vector obtained by orthogonally projecting a normal vector of the processed side surface to the main surface is defined as a lateral vector, an angle between the lateral vector and a projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing Group III nitride semiconductor to the main surface is 0.5&#xb0; or more and 6&#xb0; or less.

Production method for group III nitride semiconductor and group III nitride semiconductor

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission efficiency. The Group III nitride semiconductor light-emitting device includes a base layer, an n-type superlattice layer, a light-emitting layer, and a p-type cladding layer, each of the layers being made of Group III nitride semiconductor. An electron injection adjusting layer comprising a single AlGaN (0&#x3c;x&#x3c;1) layer and having a thickness of 5 &#x212b; to 30 &#x212b; is formed in the base layer. The n-type superlattice layer is a superlattice layer having a periodic structure of an InGaN (0&#x3c;y&#x3c;1) layer, an i-GaN layer, and an n-GaN layer. The electron injection adjusting layer has a thickness of 5 &#x212b; to 30 &#x212b; and an Al composition ratio of 0.15 to 0.5.

There is provided a method for producing a Group III nitride semiconductor light-emitting device having a low driving voltage, which is realized by steeply increasing the concentration of Mg within a p-type semiconductor layer. This production method includes the steps of forming an n-type contact layer, forming an n-side high electrostatic breakdown voltage layer, forming an n-side superlattice layer, forming a light-emitting layer, forming a p-type cladding layer, forming a p-type intermediate layer, and forming a p-type contact layer. The step of forming the p-type cladding layer includes supplying a dopant gas without supplying a first raw material gas (TMG) containing a Group III element during a first period TA1 and supplying the first raw material gas (TMG) and the dopant gas during a second period TA2 after the first period TA1 so as to grow a semiconductor layer.

The present invention provides a Group III nitride semiconductor light-emitting device having a low drive voltage and a production method therefor. A p-type semiconductor layer formation step comprises a p-type cladding layer formation step of forming a p-side superlattice layer on a light-emitting layer by supplying a first raw material gas containing at least a Group III element and a dopant gas, a p-type intermediate layer formation step of forming a p-type intermediate layer on the p-side superlattice layer by supplying a first raw material gas and a dopant gas, a dopant gas supply step of supplying the dopant gas while stopping the supply of the first raw material gas after the p-type intermediate layer formation step, and a p-type contact layer formation step of forming a p-type contact layer on the p-type intermediate layer by supplying a first raw material gas and a dopant gas after the dopant gas supply step.

Group III nitride semiconductor light-emitting device and production method therefor

The present invention provides a Group III nitride semiconductor light-emitting device which exhibits improved light emission efficiency. The light-emitting layer has a MQW structure in which a plurality of layer units are repeatedly deposited, each layer unit comprising a well layer, a capping layer, and a barrier layer sequentially deposited. The well layer is formed of InGaN, the capping layer has a structure in which a GaN layer and an AlGaN layer are deposited in this order on the well layer, and the barrier layer is formed of AlGaN. The AlGaN layer has a higher Al composition ratio than that of the barrier layer. The AlGaN layer in the former portion has a lower Al composition ratio than that of the AlGaN layer in the latter portion when the light-emitting layer is divided into a former portion at the n-cladding layer side and a latter portion at the p-cladding layer side in a thickness direction.

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high light efficiency achieved by relaxing a piezoelectric field generated in a light-emitting layer without deteriorating the crystal quality of the light-emitting layer, and a method for producing the same. The light-emitting device has a light-emitting layer in which layer units are repeatedly deposited. Each layer unit comprises an AlGaN layer, an n-type InGaN layer, an InGaN layer, a GaN layer, and an AlGaN layer which are deposited in this order on the n-side superlattice layer. The n-type InGaN layer is doped with Si at a Si concentration of 1&#xd7;10/cmto 3&#xd7;10/cm.

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Kiyosu, Japan

Koji Okuno