Mitsubishi Electric Corporation

Ushio Denki Kabushiki Kaisha

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Koji Oda

Kazunori Inoue

Naoki Nakagawa

Takahiro Hiraoka

Masashi Okamoto

Takeshi Ono

Nobuaki Ishiga

Kensuke Nagayama

Naoki Tsumura

Mahito Sawada

Junya Asayama

Tomoyuki Irizumi

Seiji Okura

Takeshi Kubota

Takaaki Murakami

Yusuke Yamagata

Takafumi Hashiguchi

Kazushi Yamayoshi

Takumi Nakahata

Osamu Miyakawa

Toshihiro Yamashita

Hiroyuki Fuchigami

Koichi Kamei

Manabu Iwakawa

Rii Hirano

Motonori Tada

Shinichiro Kanaoka

Yusuke Uchida

Provided is a new light source device using an excimer lamp, particularly, a light source device for sterilization and deodorization. The light source device includes an excimer lamp and a flyback-type lighting device that supplies power to the excimer lamp. The lighting device includes a transformer, a switching element, and a control circuit that supplies a drive signal to the switching element. The control circuit controls the switching element on and off so that the switching frequency (FS) for the switching element at the time of starting to light is lower than the switching frequency (FO) at the time of steady-state lighting, and the ON-duty (TS) for the switching element at the time of starting to light is lower than the ON-duty (TO) at the time of steady-state lighting.

Light source device, and sterilizing/deodorizing device

Provided is an excimer lamp light source device that achieves low cost and avoids the occurrence of narrowly-defined contracted discharge by adopting a lamp bulb having a simple structure and of the type in which a discharge current is passed in a tube axis direction. The excimer lamp light source device includes: an excimer lamp that has a pair of external electrodes configured to induce an electric discharge in a discharge space of a lamp bulb and to cause a discharge current to flow in a tube axis direction of the lamp bulb, and that generates UV light in the discharge space by the discharge; and an inverter having a transformer equipped with a secondary winding to which the external electrodes are connected in order to apply a high-voltage alternating current to the excimer lamp, the inverter supplying power lower than power that causes a linear discharge.

Excimer lamp light source device

An opening insulation film covers a substrate and is in contact with a side surface of a gate electrode. The opening insulation film is provided with a first opening portion having a side surface on the gate electrode. A gate insulation film made of an oxide insulator is on the gate electrode and the opening insulation film. A semiconductor channel film made of an oxide semiconductor is on the gate insulation film and is encompassed by the first opening portion. Source and drain electrodes are on the semiconductor channel film. A source upper-layer electrode and a drain upper-layer electrode both made of an oxide are provided at least on upper surfaces of the source electrode and the drain electrode, respectively. An interlayer insulation film made of an oxide has a portion provided on the source upper-layer electrode and the drain upper-layer electrode and is in contact the semiconductor channel film.

Thin film transistor substrate having source and drain upper-layer electrodes

A TFT substrate includes: a first semiconductor layer made of a-Si, disposed on a gate insulation layer, facing to a first gate electrode; a first and a second contact layers made of oxide having semiconductor characteristics and each partially disposed in contact with the first semiconductor layer; a first and a second electrodes connected with the first and the second contact layers, respectively; a second semiconductor layer having the same composition as the first contact layer, disposed on the gate insulation layer, facing to a second gate electrode; a third and a fourth electrodes having the same composition as the first electrode and each partially disposed in contact with the second semiconductor layer; and a pixel electrode made of oxide having conductive characteristics and the same composition as the first contact layer, disposed on an insulation layer in a first region, connected with the second electrode.

Thin film transistor substrate and method of manufacturing thin film transistor substrate

An array substrate according to the present invention is a TFT substrate including a pixel TFT and a drive TFT on a substrate, where the pixel TFT includes a first source electrode, a first drain electrode, and an amorphous silicon layer, and the drive TFT includes a third oxide semiconductor layer provided on a gate insulating film while overlapping a second gate electrode in plan view, and a second source electrode and a second drain electrode overlapping the third oxide semiconductor layer in plan view, with a third separation portion separating the second source electrode and the second drain electrode from each other.

Array substrate, liquid crystal display, thin film transistor, and manufacturing method of array substrate

An array substrate according to the present invention includes a non-linear element. The non-linear element includes a first insulation film disposed so as to cover a light-shielding body, an oxide semiconductor film disposed on the first insulation film so as to overlap the light-shielding body in a plan view, a source electrode and a drain electrode that are disposed so as to be apart from each other with a separation portion therebetween on the oxide semiconductor film, a second insulation film disposed so as to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a first back electrode disposed on a third insulation film and connected to a source wire through a first contact hole. The first back electrode is disposed so as to overlap the source electrode and part of the separation portion on the oxide semiconductor film in a plan view.

Array substrate and liquid crystal display

A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively disposed on the gate insulating film; a source electrode and a drain electrode that are spaced from each other on the transparent oxide film; and a light transmissive pixel electrode electrically connected to the drain electrode. The transparent oxide film includes a conductive region and a semiconductor region. The conductive region is disposed in a lower portion of the source electrode and the drain electrode and disposed in a portion that continues from the lower portion of the drain electrode, extends to part of an upper portion of the common electrode, and forms the pixel electrode. The semiconductor region is disposed in a portion corresponding to a lower layer in a region between the source electrode and the drain electrode.

Thin film transistor substrate and method for manufacturing the same

A thin-film transistor substrate constituting a liquid crystal display includes: a thin-film transistor including, a gate electrode, a gate insulating film covering the gate electrode, a semiconductor layer opposing the gate electrode via the gate insulating film, a channel protective film covering the semiconductor layer, a protective film covering over the channel protective film, source and drain electrodes in contact with the semiconductor layer through first contact holes penetrating through the protective film and the channel protective film; a first electrode electrically connected to the drain electrode; a gate wiring extending from the gate electrode; and a source wiring electrically connected to the source electrode. The source wiring and first electrode are respectively electrically connected to the source electrode and drain electrode through respective second contact holes penetrating through the protective film. The first electrode and source wiring have a first transparent conductive film formed on the first insulation film.

Thin-film transistor substrate, thin-film transistor substrate manufacturing method, and liquid crystal display

A liquid crystal display device includes an electrode configuration layer provided on a support substrate, the electrode configuration layer includes a stripe region having a plurality of electrode regions and a plurality of insulator regions arranged in an alternating manner, and the electrode regions and the insulator regions are formed by partially performing a reduction treatment or an oxidation treatment on a layer made of one material, thereby controlling conductivity. Further, the electrode regions are included in at least one of the pixel electrode and the counter electrode of the liquid crystal display device.

Liquid crystal display device and production method for same

A TFT array substrate has an organic insulating film formed of a photosensitive organic resin material. A common electrode and a lead-out wiring are formed on the organic insulating film, and a pixel electrode is formed above the common electrode with an interlayer insulating film provided between them. The pixel electrode is connected to the lead-out wiring through a contact hole formed in the interlayer insulating film. The lead-out wiring and the common electrode are connected to a drain electrode and a common wiring, respectively, through contact holes formed in the organic insulating film. A metal cap film is provided on each of the lead-out wiring and the common electrode in the contact holes formed in the organic insulating film.

TFT array substrate and method for producing the same

A linear light source includes an LED, an LED drive circuit substrate disposed on a frame, a flexible substrate on which an electric supply pattern is formed and to which the LED is attached at one end and the LED drive circuit is attached at the other end, a linear light guide and a heat sink. The one end of the flexible substrate is attached to the heat sink. A face of the heat sink covered by the LED and a face of the one end of the flexible substrate are perpendicular to the light guide and to a substrate face of the LED drive circuit substrate, while a face of the other end of the flexible substrate is parallel to the light guide and a substrate face of the LED drive circuit substrate. A bent portion is formed between the two ends of the flexible substrate.

Linear light source apparatus

An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.

Thin film transistor with a semiconductor layer that includes a microcrystalline semiconductor layer and display device

A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.

Display device and method of manufacturing the same

A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH, N, and SiH, and Hgas or a mixture of Hand He. The first region is deposited by setting the flow-rate ratio NH/SiHin a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH/SiHto be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.

Growing community of inventors

Kumamoto, Japan

Koji Oda