Fujitsu Corporation

Fujitsu Limtied

Fujitsu Tohoku Electronics

Koji Nozaki

Miwa Kozawa

Takahisa Namiki

Ei Yano

Keiji Watanabe

Junichi Kon

Miwa Igarashi

Yoko Kuramitsu

Satoshi Takechi

Makoto Takahashi

Akiko Kotachi

Yuko Kaimoto

Kozo Makiyama

Yuji Uehara

Minoru Hirose

Michiaki Kanamine

Tetsuya Hayashi

Keita Ohtsuka

Hiroshi Shirataki

Yoko Makino

Tsuyoshi Inomata

Kazunori Okuyama

Yoshihiro Nakata

Tadahiro Imada

Toshihiro Ohki

Eiichi Hoshino

Masayuki Takeda

Masahiro Uraguchi

Toshikatsu Minagawa

Yuichi Yamamoto

Ryosuke Tokutomi

To provide a resist matter improving material containing C4-11 linear alkanediol, and water.

Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device

A method for producing a semiconductor device includes forming a resist pattern by coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.

Method for forming resist pattern, semiconductor device and production method thereof

The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same

To provide a pattern forming method, which contains: forming a first resist pattern on a processing surface using a first resist composition; forming a coating layer using a coating material so as to cover a surface of the first resist pattern; applying a second resist composition over the first resist pattern above which the coating layer has been formed so as not to dissolve the first resist pattern with the second resist composition to thereby form a second resist film; and selectively exposing the second resist film to exposure light and developing the second resist film to thereby expose the first resist pattern to the air, as well as forming a second resist pattern in an area of the processing surface where the first resist pattern has not been formed.

Pattern forming method, method for manufacturing semiconductor device, and material for forming coating layer of resist pattern

To provide a resist pattern improving material, containing: a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof; and water:  

To provide a resist pattern improving material, containing: water; and benzalkonium chloride represented by the following general formula (1): where n is an integer of 8 to 18.

Resist pattern improving material, method for forming resist pattern, method for producing semiconductor device, and semiconductor device

A resist composition, which contains: a silicon compound having at least an alkyl-soluble group which may be substituted with a substituent; and a resin having an alkali-soluble group which may be substituted with an acid labile group, wherein the resist composition is designed to be subjected to immersion lithography.

Resist composition, method for forming resist pattern, and method for producing electronic device

A resist pattern thickening material containing a resin, a cyclic compound expressed by the general formula 1, at least one of compounds expressed by the general formulae 2 to 3, respectively, and water: 

Resist pattern thickening material, semiconductor device, and production method thereof

A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution.

Method for wet etching while forming interconnect trench in insulating film

A dithiane derivative, having a structure expressed by the following general formula 1: where Ris &#x2014;H, or &#x2014;CH, a polymer containing a monomer unit containing the dithiane derivative, a resist composition containing the polymer, and a method for manufacturing a semiconductor device using the resist composition.

Dithiane derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition

A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

Manufacturing process of semiconductor device

To thicken a resist pattern to be thickened to thereby easily form a fine pattern exceeding an exposure limit of optical source of conventional exposure devices, a process forms a resist pattern to be thickened by patterning a resist on an underlying object; applying a surfactant composition containing at least a surfactant on the resist pattern to be thickened; and applying a resist pattern thickening material containing at least a resin and a surfactant thereonto. The resist pattern to be thickened is thus thickened to form a fine pattern having a narrowed pitch.

Process for forming resist pattern, semiconductor device and fabrication thereof

To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

Resist pattern swelling material, and method for patterning using same

To provide a material including: a silicon-containing polymer having at least an alkali-soluble group and is represented by the following general formula (1); and an organic solvent capable of dissolving the silicon-containing polymer.(SiO)(RSiO)(OR)&#x2003;&#x2003;general formula (1)where Rrepresents at least one of a monovalent organic group, hydrogen atom and hydroxyl group, Rrepresents at least one of a monovalent organic group and hydrogen atom (where Rand Reach may appear twice or more, and at least one of Rand Rcontains an alkali-soluble group), 't' represents an integer of 1 to 3, 'a,' &#x201c;b,&#x201d; and &#x201c;c&#x201d; represent the relative proportions of their units (where a&#x2267;0, b&#x2267;0 and c&#x2267;0, and &#x201c;a,&#x201d; &#x201c;b,&#x201d; and &#x201c;c&#x201d; are not 0 at the same time), and (RSiO)may appear twice or more.

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Kawasaki, Japan

Koji Nozaki