Central Research Institute of Electric Power Industry

Mitsubishi Heavy Industries Limited

The Kansai Electric Power Co., Inc.

Dainihon Jochugiku Co., Ltd.

Sumitomo Chemical Company, Limited

Mitsubishi Heavy Industries Engineering, Ltd.

Fuji Electric Co., Ltd.

Hitachi Solutions, Ltd.

Mitsubishi Electric Corporation

National Institute of Advanced Industrial Science and Technology

Ushio Denki Kabushiki Kaisha

The Yankee Candle Company, Inc.

Towa Pharmaceutical Co., Ltd.

Zhongshan Fuji Chemical Co., Ltd.

Hitachi Software Engineering Company, Ltd.

Koji Nakayama

Hidekazu Tsuchida

Tatsuya Tsujiuchi

Yoshitaka Sugawara

Takahito Yonekawa

Isaho Kamata

Toshiyuki Miyanagi

Takashi Kamijo

Hiromitsu Nagayasu

Yoshio Katsuda

Masayuki Inui

Katsunori Asano

Tomonori Nakamura

Ryosuke Ishii

Hiroshi Tanaka

Takuya Hirata

Yasuyuki Yagi

Masahiko Tatsumi

Shinya Kishimoto

Masaru Chiyomaru

Yoshiki Sorimachi

Kazuhiko Kaibara

Ryo Yoshida

Kouichi Morita

Takeshi Tawara

Kaori Yoshida

Osamu Miyamoto

Yoshiyuki Yonezawa

Rikio Kan

Kiyotaka Kunimune

Ayumu Yamazaki

Masafumi Inoue

Seiichi Kashima

Yumi Kawajiri

Hiroshi Matsumoto

Akihiro Koyama

Koichi Murata

Manabu Takei

Shintaro Honjo

Moritoshi Murakami

Shinichiro Matsunaga

Tomonori Mizushima

Frederick A Enko

Kazutoshi Kojima

Yoshihiro Minamite

Aya Ota

Cheriyan B Thomas

Yasuhiro Kirihata

Go Yamada

Masuo Matsumoto

Mitsuru Sometani

Tetsuya Miyazawa

Kensuke Takenaka

Shiyang Ji

Shimpei Nishida

Taisuke Itano

Yuji Kiuchi

Hiroshi Asai

Tomohiro Kakinoki

Chi Wai Chan

Tetsuro Hemmi

Masahiro Nagano

Kouichi Murata

Mie Kishi

Ryoko Ukita

Tomoko Takahashi

Hirata Takuya

Chiaki Tamura

Hirofumi Geho

Hironori Koyama

Taiji Ono

Tsutomu Kanzaki

Tomoyuki Hikitsuchi

A silicon carbide semiconductor device has an active region and a termination structure portion disposed outside of the active region. The silicon carbide semiconductor device includes a semiconductor substrate of a second conductivity type, a first semiconductor layer of the second conductivity type, a second semiconductor layer of a first conductivity type, first semiconductor regions of the second conductivity type, second semiconductor regions of the first conductivity type, a gate insulating film, a gate electrode, a first electrode, and a second electrode. During bipolar operation, a smaller density among an electron density and a hole density of an end of the second semiconductor layer in the termination structure portion is at most 1×10/cm.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Super continuum light having a continuous spectrum over at least 1100 to 1300 nm is emitted from a pulsed light source, is pulse-stretched by a stretching element such that a relationship between a wavelength and an elapsed time in one pulse is one to one, and is radiated to a product. The light transmitted through the product is received by a light receiver, and output data is input to the determination unit. A quality determination program of the determination unit calculates an absorption spectrum from the output data, quantifies the absorption spectrum by chemometrics, and compares the absorption spectrum with a reference value to determine quality. The product determined to be a defective product is excluded by an exclusion mechanism.

Product inspection method and product inspection apparatus

A tube leak detection device for detecting leak of at least one tube of a heat exchanger which increases a temperature of a liquid by heat exchange between the liquid flowing inside the at least one tube and a fluid flowing outside the at least one tube includes: an inlet opening-and-closing valve and an outlet opening-and-closing valve disposed at an inlet end and an outlet end of the at least one tube, respectively; and a pressure detection member for detecting a pressure inside the at least one tube between the inlet opening-and-closing valve and the outlet opening-and-closing valve.

Tube leak detection device and tube leak detection method

An exhaust gas cooler includes: a steam drum containing first water; an economizer for heat exchange between exhaust gas and the first water supplied from the steam drum; and a feedwater pipe for supplying the first water with second water having a lower temperature than the first water. The exhaust gas cooler is configured such that the first water flowing out of the economizer is introduced into the steam drum. The second water is divided and supplied to the first water flowing out of the economizer and the first water flowing into the economizer.

Exhaust gas cooler

During epitaxial growth of an n-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n-type lifetime reduced layer is selectively formed in the n-type drift layer. The n-type lifetime reduced layer is disposed at a depth that is more than 5 &#x3bc;m from a pn junction surface between a p-type anode layer and the n-type drift layer in a direction toward a cathode side, and the n-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is &#x2153; times a thickness of the n-type drift layer. A vanadium concentration of the n-type lifetime reduced layer is 1/100 to &#x2155; of a nitrogen concentration of the n-type lifetime reduced layer.

Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device

Provided is a chemical agent vaporizing/discharging device which can efficiently vaporize and discharge a chemical agent from a chemical agent retainer, and sufficiently diffuse the chemical agent, even when the device is used in a relatively large space or outdoors. A chemical agent vaporizing/discharging devicecomprises: a chemical agent retainerhaving a chemical agent retention layerincluding intersticesfor allowing retention of a volatile chemical agent, and a gas permeable layerincluding voidshaving a size larger than a size of the interstices; and a rotational drive partfor driving the chemical agent retainer. A shape and a size of the chemical agent retainer, and a rotational speed of the rotational drive part, are set so that a centrifugal effect of 10 to 150 (G) is obtained during rotation of the chemical agent retainer

Device and method for vaporizing/discharging chemical agent

An insect pest control product applicable to a water-based insecticidal composition with stable performance over a long time, which comprises a thermal vaporization/diffusion absorbent wick for vaporizing and diffusing a water-based insecticidal composition containing a pyrethroid insecticidal component having a vapor pressure of 2&#xd7;10to 1&#xd7;10mmHg at 30&#xb0; C., a glycol ether compound having a boiling point of 150-300&#xb0; C., and water. The wick has a water/oil-based liquid absorption ratio (V/V) within the range of 0.55-1.0, calculated from a speed (V) at which a water-based liquid formulation rises through the wick, and a speed (V) at which an oil-based liquid formulation rises through the wick, the water-based liquid formulation contains 40 mass % of diethylene glycol monobutyl ether, and the oil-based liquid formulation is a fluid paraffin having 14 carbon atoms.

Insect pest control product and insect pest control method

A three-dimensional structure is provided which is obtained by molding a volatile chemical-containing resin composition into a plate form, wherein the three-dimensional structure includes through-holes penetrating therethrough from the front to the back thereof, the through-holes have peripheries having a shape selected from polygonal, circular, circular arc and spiral shapes when the three-dimensional structure is viewed from the front, and the peripheries of the through-holes are formed on a single plane or on a smoothly curved imaginary surface.

Three-dimensional structure containing volatile chemical

A vaporizing/discharging containeris provided that can properly vaporize and discharge a volatile substance in use, and prevent tampering by children, etc. The vaporizing/discharging containerfor vaporizing and discharging a volatile substance into the outside, includes a main bodyconfigured to contain the volatile substance, and a closure memberhaving a vapor discharging holefor the volatile substance, and configured to be screwed and attached onto the main body. A pair of temporary lock mechanisms() configured to engage with each other so that resistance occurs against a direction in which the closure memberis rotated backward after the closure memberis screwed onto the main body, are provided between the closure memberand the main body, and at least one of the temporary lock mechanisms() is formed in the shape of steps.

Vaporizing/discharging container, and flying insect pest repellent device using the vaporizing/discharging container

A steam supply system that can reheat COabsorbing liquid without lowering performance of a reboiler by decompressing a condensed water drum is provided. This system includes a reboiler that raises the temperature of absorbing liquid contacted with exhaust gas discharged from a boiler to absorb COin the exhaust gas and heated to eliminate CO. The reboiler includes a heat exchanger tube to which steam for heating is supplied and a condensed water drum that recovers condensed water of the steam introduced from the heat exchanger tube as steam drain, and the condensed water drum is provided with decompression unit that lowers pressure in the condensed water drum.

[object Object]

A COrecovery system includes an absorption apparatus that brings a COabsorption liquid into contact with an exhaust gas treated by a pre-treatment apparatus so that COin the exhaust gas is absorbed into the COabsorption liquid; a regeneration apparatus that separates COfrom the COabsorption liquid; an absorption liquid circulation path that circulates the COabsorption liquid between the absorption apparatus and the regeneration apparatus; and an impurity removal unit that removes impurities having a high concentration in the absorption liquid circulation path, in the absorption liquid circulation path and/or in the pre-treatment apparatus in advance.

The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an &#x3b1;-type crystal structure, containing aluminum at impurity concentration of 1&#xd7;10cmor higher, and having thickness of 50 &#x3bc;m or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having &#x3b1;-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500&#xb0; C. to 1,700&#xb0; C., and pressure conditions of from 5&#xd7;10Pa to 25&#xd7;10Pa.

Semiconductor structure, semiconductor device, and method for producing semiconductor structure

In a dehydration equipment, a regenerative gas heater heats a portion of COgas dehydrated in an adsorption tower that is performing an adsorption process and supplies the gas to an adsorption tower that is performing a regeneration process. A regenerative gas preheater performs heat exchange between the COgas that will be supplied to a regenerative gas heater and the COgas sent out from the adsorption tower that is performing the regeneration process. Then, in the dehydration equipment, a regenerative gas cooler cools the COgas that has been sent out from the adsorption tower that is performing the regeneration process and exchanged heat, separates water from the cooled COgas, and returns the resulting gas to the adsorption tower. Thus, the dehydration equipment can prevent an increase in utility consumption due to the regeneration process.

Dehydration equipment, gas compression system, and dehydration method

A CO2 recovery system includes an absorberand a regenerator. The absorberincludes a CO2 absorbing sectionand at least one water-washing section. The CO2 absorbing sectionallows flue gasto come into contact with a basic amine compound absorbentso that the basic amine compound absorbentabsorbs CO2 in the flue gas. The at least one water-washing sectionallows the decarbonated flue gasA in which the amount of CO2 has been reduced in the CO2 absorbing sectionto come into contact with wash waterA andB to reduce the amounts of the basic amine compounds entrained in the decarbonated flue gasA. The regeneratorreleases the CO2 from the basic amine compound absorbentcontaining CO2 absorbed therein.

A regeneration towerof a COrecovery unit includes an upper regeneration portionthat has a tray portion, a lower regeneration portionprovided below the upper regeneration portionand having a liquid dispersion portion, and a supply line Lthat supplies absorbing liquid stored in the tray portionto the liquid dispersion portion. The supply line Lis provided with a heat exchanger, and the absorbing liquid is circulated using the density difference between the absorbing liquid flowing before the heat exchangerand the absorbing liquid flowing after the heat exchangeras a driving force. This reduces the cost of equipment while reducing the power in the delivery of the absorbing liquid in the regeneration portion.

Growing community of inventors

Osaka, Japan

Koji Nakayama