Semiconductor Energy Laboratory Co., Ltd.

Koji Moriya

Takeshi Nishi

Hisashi Ohtani

Daisuke Kurosaki

Takahiro Fukutome

Masakatsu Ohno

Toru Tanabe

Junichiro Sakata

Yoshiaki Oikawa

Masakazu Murakami

Akio Yamashita

Taketomi Asami

Takahiro Tsuji

Masayuki Sakakura

Hideto Ohnuma

Hiroki Adachi

Shingo Eguchi

Tetsuji Ishitani

Yuji Egi

Shuji Fukai

Yohei Monma

Saki Obana

A liquid crystal display device that is not influenced by a noise in obtaining positional information can be provided. The liquid crystal display device includes a first substrate provided with a pixel electrode and a common electrode with a first insulating film interposed therebetween. The pixel electrode and the common electrode partly overlap with each other. The liquid crystal display device further includes a second substrate provided with a pair of electrodes, a resin film covering the pair of electrodes, and a conductive film on the resin film. The pair of electrodes partly overlap with each other with a second insulating film interposed therebetween. The liquid crystal display device further includes a liquid crystal layer between the conductive film on the second substrate side and the pixel electrode and the common electrode on the first substrate side. A predetermined potential is supplied to the conductive film.

Liquid crystal display device

The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa&#xb7;m] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1&#xd7;10wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm].

Manufacturing method of a liquid crystal device comprising an alignment film formed under reduced pressure

One object is to provide a method for manufacturing a display device in which shift of the threshold voltage of a thin film transistor including an oxide semiconductor layer can be suppressed even when ultraviolet light irradiation is performed in the process for manufacturing the display device. In the method for manufacturing a display device, ultraviolet light irradiation is performed at least once, a thin film transistor including an oxide semiconductor layer is used for a switching element, and heat treatment for repairing damage to the oxide semiconductor layer caused by the ultraviolet light irradiation is performed after all the steps of ultraviolet light irradiation are completed.

Method for manufacturing display device

It is an object to manufacture a highly reliable backlight device with less color unevenness and less luminance unevenness, and a high-performance and highly reliable display device including the backlight device, which can display a high quality image. A light emitting diode (LED) is used as a light source of a backlight device and thermoelectric elements are provided in a chassis for holding the light emitting diode so as to surround the light emitting diode (the thermoelectric elements are provided under the light emitting diode and on the four sides thereof). A temperature in the backlight device is adjusted by cooling and heating by the thermoelectric elements.

Backlight device and display device

According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole transport layer). Specifically, a thin insulating or semi-insulating barrier layer which contains silicon or silicon oxide; silicon or silicon oxide and a light transmitting conductive oxide material; or silicon or silicon oxide, a light transmitting conductive oxide material, and carbon may be provided between a light transmitting conductive oxide film formed of a light transmitting conductive oxide material, such as ITO and a hole injection layer containing an organic compound.

Light emitting element and manufacturing method thereof

The invention provides a display device of which a contrast ratio is enhanced. By providing stacked polarizing plates so as to be in a cross nicol state, a contrast ratio of a display device can be enhanced. The stacked polarizing plates are stacked outside a light-transmissive insulating substrate in a parallel nicol state. When the number of polarizing plates is four or five in total, a contrast ratio becomes the highest.

Display device

The present invention provides a liquid crystal electro-optical device that response time is short and voltage holding rate is not lowered. One feature of the invention is a first substrate, a first electrode over the first substrate, a first orientation film covering the first electrode, and a second substrate opposed to the first substrate and provided with a second electrode, a second orientation film covering the second electrode, a liquid crystal layer interposed between the first and the second substrates, wherein the liquid crystal layer is formed of a mixture of a nematic liquid crystal and a liquid crystal having a smectic phase, wherein a ratio of a liquid crystal having a smectic phase in the mixture is 20 weight % or less, and wherein an arithmetic average of rise response time and fall response time of a plurality of liquid crystal molecules in the mixture is 8 msec or less.

Liquid crystal electro-optical device

Provided is a method of controlling an alignment direction of CNTs in manufacturing a carbon nanotube semiconductor device using the CNTs for a channel region formed between a source electrode and a drain electrode. In manufacturing a carbon nanotube semiconductor device including a gate electrode, a gate insulating film, a source electrode, a drain electrode, a CNT layer formed between the source electrode and the drain electrode in contact therewith, the method conducts: dropping a CNT solution obtained by dispersing CNTs in a solvent onto a region between the source electrode and the drain electrode while an alternating current voltage is applied between the source electrode and the drain electrode; and removing the solvent to control an orientation of the CNTs in the CNT layer.

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Kanagawa, Japan

Koji Moriya