Other

Tokyo Electron Limited

Honda Giken Kogyo Kabushiki Kaisha

Adv Antest Corporation

Tadahiro Ohmi

Tohoku University

Kabushiki Kaisha Ultraclean Technology Research Institute

Tadashi Shibata

Hitachi Industries Co., Ltd.

I & F, Inc.

Koji Kotani

Takahiro Yamaguchi

Toshihisa Nozawa

Takahisa Nitta

Kazuyuki Maruo

Makoto Imai

Shigetoshi Sugawa

Kazuo Takeda

Makoto Tsuji

Teruyuki Ohtani

Masao Utsunomiya

Toshiyuki Matsuoka

Kazuo Andou

Toshiyuki Nozawa

Kouji Tanaka

Takeshi Taguchi

Masanori Fujibayashi

Toshio Nakanishi

Hiroto Kobayashi

Haruo Miura

Minoru Honda

Hiroaki Terada

Yoshio Yamamoto

Minoru Torii

Kenji Dosaka

Mitsuru Ikeo

Kazuo Ando

Tohru Ohta

Masashi Imanaka

Hideyuki Fujishiro

Feifei Lee

Takeshi Yanobe

Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an inside of the chamber; and a plasma generating unit configured to generate plasma in the chamber. The substrate pedestal includes a pedestal body having a smaller diameter than that of the substrate and including a placement surface, and an annular adjustment member disposed outside the pedestal body. The adjustment member is replaceably installed. A plurality of adjustment members having various steps are provided at a position outside the substrate as the adjustment member, and among the plurality of adjustment members, an adjustment member is selected and used according to a processing condition of a plasma processing.

Plasma film-forming apparatus and substrate pedestal

There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

Semiconductor integrated circuit switch matrix

A processing method performs a predetermined process to an object by supplying a process gas at a prescribed flow rate into a process container to which a gas supply unit and an exhaust system are connected. The processing method includes a first process of setting the gas supply unit to supply a process gas at a flow rate greater than the prescribed flow rate of a predetermined process for a predetermined short time from a gas channel while exhausting an atmosphere in the process container through the exhaust system; and a second process of setting the gas supply unit to supply the process gas at the prescribed flow rate from the gas channel after the first process is completed.

Processing method

A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Processing apparatus and processing method

A first flow passage (), which cools a temperature controlled object by a circulating first cooling water (), and a second flow passage () separate from the first flow passage are provided so as to exchange heat between a second cooling water () flowing through the second flow passage () and the first cooling water (). There is no need to store the first cooling water () in a tank of a constant capacity, and the first cooling water () flowing through the first flow passage () of a chiller corresponding part is absorbed substantially in its entirety by the second cooling water (). A response becomes quick with respect to a load fluctuation of the temperature controlled object, and waste of energy can be reduced while improving accuracy of temperature control.

Substrate processing apparatus and temperature control device

A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.

Complementary MIS device

A metallic separator in which falling off of the conductive inclusions projecting from a matrix surface is prevented, whereby the contact resistance is decreased, resulting in increasing the characteristics for generation of electrical energy. A metallic separator for a fuel cell comprises conductive inclusions in a metal structure, and the conductive inclusions project from a surface of a matrix to a height of 1 to 3 micrometers.

Metal separator for fuel cell and its production method

The data analysis deviceincludes: difference calculation means (S) for, with respect to an image, carrying out a calculation of calculating a difference between intensity values at an arbitrary point in the image and a point located in the vicinity of the arbitrary point in a first direction as a first intensity difference of the arbitrary point and of calculating a difference between intensity values at the arbitrary point and a point located in the vicinity of the arbitrary point in a second direction different from the first direction as a second intensity difference of the arbitrary point, the difference calculation means carrying out the calculation with respect to each of a plurality of points in the image; and frequency distribution generation means (Sto S) for quantizing a vector comprising the first intensity difference and the second intensity difference obtained by the difference calculation means for each of the plurality of points in the image into a single region of a plurality of regions (regions represented by the index numbers 0 to 49 of the quantization table in FIG.) divided by a predetermined region division method and generating a frequency distribution of the plurality of regions by using the number of vectors quantized for each of the plurality of regions as frequency of the corresponding region.

Data analysis device and data recognition device

A metallic separator according to a first embodiment is formed by obtaining a blank by rolling a metallic material having conductive inclusions, and removing a surface of the blank by 2% or more of the thickness of the blank. A metallic separator according to a second embodiment is formed by pressing a metallic plate so as to have a cross section including ridges and grooves alternatively, and removing parts of the ridged portions so as to make flattened surfaces. A metallic separator having conductive inclusions in its metal texture according to a third embodiment is formed by blasting a liquid containing two or more kinds of abrasives having different particle diameters to a blank after it has been rolled. A metallic separator having conductive inclusion in its metal texture according to a fourth embodiment is formed by blasting a passivation treatment liquid mixed with abrasives to the separator.

Method for manufacturing fuel cell metallic separator

There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing. There is provided a computing unit for computing input data, and this computing unit computes input digit data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders) for outputting carry data representing this carry, and delay means (memory) for delaying the computation result from the computation circuit by one computation time unit, are provided.

Semiconductor circuit for arithmetic processing and arithmetic processing method

A turbo-compressor being driven by an electric motor has an inlet guide vane and a blow-off valve. The surge limit line of the compressor is amended depending upon seasonal changes of temperature and pressure of a working gas to be sucked into the compressor. Upon the basis of the surge limit line amended, the minimum opening of the inlet guide vale is altered, thereby reducing the driving power or force of the compressor.

Turbo compressor and method of operating the turbo compressor

There is provided a high-performance semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a switch block for switching connections among a plurality of signal lines by means of a plurality of transistors formed respectively in a plurality of semiconductor layers and a plurality of logic blocks formed in each of the plurality of semiconductor layers and connected to each of the plurality of signal lines. The first switch block is a programmable switch block capable of changing the connection topology among the plurality of signal lines.

Semiconductor integrated circuit

A turbo-compressor comprises a compressor main body for compressing an operation fluid, an inlet guide vane apparatus being provided on a suction side of the compressor main body and having guide vanes, and a blow-off valve being provided in a discharge said compressor main body. An opening of the blow-off valve is variable. A pressure detector is provided on the discharge side of the compressor. At least any one of a time-period and a number of times of operations of the inlet guide vane apparatus is memorized in a memory, when it is operated at an inlet guide vane opening, being equal or less than a setting limit. A controller controls the blow-off valve and the guide vanes based on the values which are memorized in the memory.

Turbo-compressor and capacity control method thereof

Growing community of inventors

Miyagi, Japan

Koji Kotani