Fujikin Inc.

Other

Koji Kawada

Nobukazu Ikeda

Akihiro Morimoto

Yukio Minami

Kouji Nishino

Ryousuke Dohi

Katsuyuki Sugita

Yoshikazu Tanabe

Tadahiro Ohmi

Kaoru Hirata

Keiji Hirao

Ryosuke Dohi

Hiroyuki Fukuda

Koji Nishino

Michio Yamaji

Tsutomu Shinohara

Yasuyuki Shirai

Takahisa Nitta

Akihiro Harada

Ryutaro Tanno

Hiroshi Morokoshi

Masafumi Kitano

Masaharu Taguchi

Kenji Tubota

Toshiro Nariai

Yuto Kawauchi

Toshio Nariai

Takumi Fujita

A self-diagnosis method of a flow rate control device includes: a step (a) for measuring a pressure drop characteristic after a pressure control valve () has been changed to a closed state from a state where a fluid flows from the upstream side of the pressure control valve with the opening of a flow rate control valve () is larger than a restriction part; a step (b) for measuring the pressure drop characteristic after the pressure control valve has been changed to the closed state from a state where the fluid flows from the upstream side of the flow rate control valve to the downstream side with the opening of the flow rate control valve is smaller than the restriction part; a step (c) for determining whether there is an abnormality by comparing the pressure drop characteristic measured in step (a) with a corresponding reference pressure drop characteristic; a step (d) for determining whether there is an abnormality by comparing the pressure drop characteristic measured in step (b) with a corresponding reference pressure drop characteristic; and a step (e) for determining that there is an abnormality in the flow rate control valve when it is determined that there is an abnormality only in the step (d).

Self-diagnosis method for flow rate control device

A piezoelectric element-driven valveincluding a main body, a valve element, piezoelectric actuators, a plurality of cylindrical actuator boxes arranged in series, a cylindrical outer connecting jig detachably connecting the adjacent actuator boxes and having an opening for drawing out wiring, a plurality of piezoelectric actuators accommodated in the actuator box respectively in the same direction, and a cylindrical inner connecting jig slidably accommodated in the outer connecting jig and having an opening for positioning the adjacent piezoelectric actuators and drawing out wiring.

Piezoelectric driven valve, pressure-type flow rate control device, and vaporization supply device

A fluid controller is provided having a flow path through which a fluid can flow, a closed space separated from the flow path by an isolation member, and a leak port capable of communicating the closed space with an external part. An anomaly detection device for detecting an anomaly has a pressure sensor detachably fixed to the leak port, a pressure sensor for detecting the pressure in the closed space, a processing module for executing a predetermined information processing, and an detachable mechanism for blocking the leak port from the external part in the state of being fixed. The processing module determines an anomaly of the fluid controller by comparing a detection value detected by the pressure sensor to a predetermined threshold, and transmits a discrimination result of the anomaly of the fluid controller to a server.

Anomaly detection device for fluid controller, anomaly detection system, anamoly detection method, and fluid controller

A flow rate control device () comprises: a pressure control valve () provided in a flow path; a flow rate control valve () provided downstream side of the pressure control valve; and a first pressure sensor () for measuring pressure on the downstream side of the pressure control valve and on the upstream side of the flow rate control valve. The flow rate control valve has a valve element () seated on/separated from a valve seat (); a piezoelectric element () for moving the valve element so as be seated on/separated from the valve seat; and a strain sensor () provided on a side surface of the piezoelectric element. The pressure control valve () is configured to control the pressure control valve () on the basis of a signal output from the first pressure sensor (), and to control the driving of the piezoelectric element of the flow rate control valve () based on a signal output from the strain sensor ().

Flow rate control device

A piezoelectric-element-driven valve includes a valve seat provided on a flow path, a valving element detachably seated on the valve seat, and a piezoelectric element, and is configured to move the valve body by extension of the piezoelectric element. The piezoelectric-element-driven valve also is provided with a detection mechanism for detecting an extension amount of the piezoelectric element, the detection mechanism including a strain sensor, and being capable of detecting an movement amount of the valving element from an output of the strain sensor.

Piezoelectric-element-driven valve and flow rate control device

The method for parallel operation of moisture generating reactors according to the present invention operates so that an orifice, provided with an orifice hole having a predetermined opening diameter, is disposed on a mixed-gas inlet side of each of a plurality of moisture generating reactors connected in parallel with each other, and mixed gas G consisting of hydrogen and oxygen is supplied from a mixer to each of the moisture generating reactors through each orifice, and the flows of moisture generated by the moisture generating reactors are combined, and the resulting combined moisture is supplied to an apparatus that uses high-purity water. Thus, a need to increase the amount of high-purity water supply is met by allowing a plurality of moisture generating reactors to perform a parallel water generating operation by branching off a mixed gas consisting of Hand Oby using a simple orifice construction.

Method for parallel operation of reactors that generate moisture

The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket Shaving a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S, which is hermetically fitted to the lower vacuum jacket Sand with its lower face made open.

Vacuum thermal insulating valve

A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost. The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (AlO)-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.

Process of forming platinum coating catalyst layer in moisture-generating reactor

It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments. According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.

Rotary silicon wafer cleaning apparatus

A reactor comprising a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, having a gas-diffusing member provided in an internal space of the body, and having a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet are diffused by the gas-diffusing member and then come into contact with the platinum coating to enhance reactivity, thereby producing water. A temperature of the reactor is held to be below an ignition temperature of hydrogen or a hydrogen-containing gas. The platinum-coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wall surface, and forming the platinum coating on the barrier coating.

Reactor for generating moisture

A process of supplying moisture at low flow rates which permits high precision control of the flow of moisture to a semiconductor manufacturing line from an apparatus for the generation of moisture, characterized in that the flow of hydrogen to a moisture-generating reactor is controlled by means of a flow controller in such a way that an amount of hydrogen as fed is gradually increased from the start and reaches a specific set level such that when a specific time has passed, a predetermined rate of moisture begins to be produced and supplied to the semiconductor manufacturing line. The moisture is generated in the apparatus for generation of moisture in which hydrogen and oxygen are (a) fed into a reactor provided with a coat of platinum on the wall in the interior space, (b) enhanced in reactivity by the platinum catalytic action, and (c) caused to instantaneously react with each other at a temperature lower than the ignition point to produce moisture without undergoing combustion at a high temperature.

Low flow rate moisture supply process

An apparatus for the treatment of exhaust gases containing hydrogen which permits always stable treatment with certainty of the exhaust gases from a semiconductor manufacturing line or the like irrespective of violent fluctuations in the flow rate of the exhaust gases, without having adverse effects on the operation of the semiconductor manufacturing line. The apparatus comprises: an ejector-type vacuum generator having a suction port connected to the discharge source of exhaust gases containing hydrogen and having a drive fluid supply port connected to an oxygen supply source, a hydrogen-oxygen reactor provided with a catalyst and connected to a drive fluid discharge port of the vacuum generator, and a drain reservoir connected to an outlet of the reactor for storing water discharged therefrom.

Apparatus for the treatment of exhaust gases by combining hydrogen and oxygen

An improved reactor for generating water from hydrogen and oxygen which allows production of moisture at a high conversion rate exceeding 99 percent with the temperature kept under some 400&deg; C. inside the reactor shell (,) and with the water vapor production being more than 1,000 sccm. One form of the reactor (FIG. 1) according to the invention is constructed with a closed cylinder divided into two compartments by an interior partition, a first reactor structural component (,) and a second reactor structural component (,), united to define a sealed interior space (,). The sealed interior space (,) of the reactor shell (,) is partitioned by a diffusion filter (,) into a first chamber (,) provided with an inlet reflector unit (,) and a second chamber (,) provided with an outlet reflector-diffuser unit (,). On the inside surface of the second reactor structural component (,) is formed a platinum coated catalyst layer (,). The inlet reflector unit (,) comprises a cylindrical casing (,) mounted over a starting material gas feed port (,) on the inside surface of the first reactor structural component (,), side openings (,) formed in the casing (,) and a reflector (,) closing the open end of the casing (,). The outlet reflector-diffuser unit (,) has a cylindrical casing (,) fixed over a water vapor gas outlet port (,) on the inside surface of the second reactor structural component (,), side openings (,) formed in the casing, a reflector (,) closing the open end of the casing (,), an outlet diffusion filter (,) provided inside the casing (,) and a platinum coated catalyst layer (,) formed on the outlet diffusion filter (,).

Reactor for the generation of water

Method for generating water for semiconductor production

A pressure type flow rate control apparatus (1) controls flow rate of a fluid in an environment where a ratio of P2/P1 between an absolute pressure P1 at an upstream side of an orifice and an absolute pressure P2 at a downstream side of the orifice is maintained at a value less than about 0.7. The apparatus comprises: a plate for forming the orifice (5); a control valve (2) positioned upstream of the orifice; an orifice corresponding valve (9) positioned downstream of the orifice (5); a primary pressure detector (3) positioned between the control valve (2) and the orifice (5); a secondary pressure detector (11) positioned downstream of the orifice (5); a calculation control device (6) for calculating flow rate Qc on the basis of the measured pressure P1 of the primary pressure detector (3) by a formula Qc=KP1 (K being a constant) and for outputting as a control signal Qy a difference between a flow rate command signal Qs and the calculated flow rate signal Qc to a drive unit (14) of the control valve 2; and a pressure comparing, calculating apparatus (10) for calculating the ratio of P2/P1 between the detected pressure P1 of the primary pressure detector (3) and the detected pressure P2 of the secondary pressure detector (11). The pressure P1 upstream of the orifice is adjusted by opening and closing the control valve by the control signal Qy, thereby controlling the flow rate downstream of the orifice.

Growing community of inventors

Osaka, Japan

Koji Kawada