Screen Holdings Co., Ltd.

Sokudo Co., Ltd.

Screen Semiconductor Solutions Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Hitachi, Ltd.

Koji Kaneyama

Masahiko Harumoto

Tadashi Miyagi

Yuji Tanaka

Masaya Asai

Shuichi Yasuda

Masashi Kanaoka

Kazuhito Shigemori

Tsuyoshi Okumura

Toru Asano

Joji Kuwahara

Akihiro Hisai

Hiroshi Kobayashi

Yukihiko Inagaki

Tsuyoshi Mitsuhashi

Tetsuya Hamada

Takashi Taguchi

Chisayo Nakayama

Atsushi Kato

Yukio Toriyama

Kiyonori Shiraki

Yasuhiro Fukumoto

You Arisawa

Kasuhito Shigemori

Akiko Harumoto

Shuji Shibata

A coating liquid containing metal as a metal-containing coating liquid is supplied to a surface to be processed of a substrate by a coating processing unit, whereby a metal-containing coating film is formed on the surface to be processed. The substrate on which the metal-containing coating film has been formed is transported to a metal removal unit by a transport mechanism. A removal liquid for dissolving the metal is supplied to a peripheral portion of the substrate by the metal removal unit such that the metal-containing coating film remains in a region except for the peripheral portion of the surface to be processed of the substrate.

Substrate processing method

A nozzle is stored in a nozzle storage hole of a waiting pod. In this state, a cleaning liquid is discharged to an outer peripheral surface of the nozzle from a plurality of discharge ports. Thus, a coating liquid and its solidified matter adhering to the nozzle are dissolved and removed from the nozzle. Subsequently, a metal removal liquid is discharged from a plurality of discharge ports to the outer peripheral surface of the nozzle. Thus, a metallic component remaining on the nozzle is dissolved and removed from the nozzle. Further, pure water is discharged to the outer peripheral surface of the nozzle from the plurality of discharge ports, and the metal removal liquid adhering to the nozzle is cleaned away.

Film processing method

Disclosed are a substrate treating apparatus and a substrate transporting method. A first treating block includes a developing-treatment layer and an interface layer arranged in an up-down direction. Accordingly, the interface layer is couplable with the indexer block. Moreover, a substrate transport mechanism of the indexer block transports a substrate from one of buffer units located at a predetermined height position in a substrate buffer to another of the buffer units located at a different height position in the substrate buffer. Accordingly, the interface layer is accessible to the buffer unit located at a height position corresponding to the interface layer. Thus, the interface layer can be made compact. Moreover, the interface layer is located in the upper part or the lower part of the developing-treatment layer, leading to reduction in footprint.

Substrate treating apparatus and substrate transporting method

Substrate processing apparatus, film formation unit, substrate processing method and film formation method

A substrate treating apparatus and a substrate transporting method wherein a platform is disposed on a first ID block, and a platform is placed on a second ID block. A currently-used carrier platform is provided only on the first ID block. Accordingly, a substrate is transported in both a forward path and a return path between the first ID block and a second treating block. The substrate is returned not to the first ID block but to the second ID block disposed between the two treating blocks in the return path.

A substrate processing apparatus includes a development processor and a reversal film former, and processes a substrate having one surface on which a resist film made of a photosensitive material is formed. The development processor forms a resist pattern on the one surface of the substrate by performing development processing on a resist film using a development liquid. A reversal film former forms a reversal film having etch resistance higher than that of the resist film on the one surface of the substrate to cover the resist pattern while regulating a temperature of the substrate in a certain range after the development processing is performed by the development processor.

Substrate processing apparatus and substrate processing method

Disclosed are a substrate treating apparatus and a substrate transporting method. A first ID block takes a substrate from a carrier placed on a carrier platform and sends the taken substrate to one of six treatment layers. Moreover, a second ID block returns the substrate, sent from the treatment layer, for example, to a carrier placed on a platform. This allows the first ID block to transport many substrates to the six treatment layers arranged in an upward/downward direction more rapidly. Moreover, this simultaneously allows the second ID block to transport many substrates, having been sent from the six treatment layers arranged in the upward/downward direction, to the carrier more rapidly. As a result, a throughput of a substrate treating apparatus can be enhanced.

Film processing unit and substrate processing apparatus

Exhaust of gas in the processing chamber is started by a gas exhaust section, and supply of an inert gas into the processing chamber is started by a gas supply section after a predetermined time length has elapsed since the exhaust of gas is started. Alternatively, the gas in the processing chamber in which a substrate is stored is exhausted by the gas exhaust section, the inert gas is supplied into the processing chamber by the gas supply section, and the pressure in a light emitter that has a light-transmitting plate is allowed to match or be close to the pressure in the processing chamber. The substrate in the processing chamber is irradiated with vacuum ultraviolet rays by the light emitter with an oxygen concentration in the gas in the processing chamber lowered to a predetermined concentration. Thus, the substrate is exposed.

Exposure device, substrate processing apparatus, exposure method and substrate processing method

A substrate is held and rotated by a spin chuck, and a coating liquid is discharged to the substrate. The coating liquid that is splashed outwardly from the substrate is received by an outer cup. A cleaning liquid that has been discharged from a cup cleaning nozzle is discharged to an inner peripheral surface of the outer cup through a first guide to clean the outer cup. Thus, the coating liquid, its solidified matter and the like adhering to the outer cup are dissolved and removed from the outer cup. Subsequently, a metal removal liquid that has been discharged from the cup cleaning nozzle is discharged to an inner peripheral surface of the outer cup through a second guide. Thus, a metallic component remaining on the outer cup is dissolved and removed from the outer cup.

Film processing unit, substrate processing apparatus and substrate processing method

A heating plate is stored in a chamber. With a solvent containing gas present in the chamber, a substrate on which a DSA film is formed is held at a position further upward than the heating plate. Thus, neutralization of an atmosphere is performed at a temperature at which microphase separation does not occur. Thereafter, with the solvent containing gas present in the chamber, the substrate is held on an upper surface of the heating plate. Thus, thermal processing is performed on the DSA film on the substrate.

Thermal processing device, substrate processing apparatus, thermal processing method and substrate processing method

A substrate having a film of a coating liquid containing metal is held by a spin chuck, the film having been exposed in a predetermined pattern. A slit nozzle supplies a development liquid to a surface to be processed of the substrate supported by the spin chuck. A cleaning liquid for removing or dissolving metal is supplied by a cleaning nozzle to the surface to be processed of the substrate to which the development liquid has been supplied.

Development unit, substrate processing apparatus, development method and substrate processing method

In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

Developing method

A resist film including a metallic component and a photosensitive material is formed on a surface of a substrate, and then a peripheral portion of the resist film on the substrate is irradiated with light by an edge exposer. Subsequently, development processing is performed with a development liquid from a nozzle on the exposed portion of the resist film. Thus, the part of the resist film formed on the peripheral portion of the substrate is removed. Thereafter, exposure processing is performed on the substrate in an exposure device, so that an exposure pattern is formed on the resist film. Then, a development liquid is supplied to the exposed substrate in a development processing unit, so that development processing is performed on the resist film.

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Kyoto, Japan

Koji Kaneyama