Jx Nippon Mining Metals Corporation

Koji Kakuta

Yohei Yamaguchi

Hajime Momoi

Toshiya Kurihara

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 m&#x3a9;cm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Oxide sintered compact and sputtering target formed from said oxide sintered compact

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein an average length of cracks existing in the IGZO sintered compact is 3 &#x3bc;m or more and 15 &#x3bc;m or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Disclosed is a technology of manufacturing, at low cost, an epitaxial crystal substrate provided with a high-quality and uniform epitaxial layer, said technology being useful in the case of growing the epitaxial layer composed of a semiconductor having a lattice constant different from that of the substrate. The substrate, which is composed of a first compound semiconductor, and which has a step-terrace structure on the surface, is used, and on the surface of the substrate, a composition modulation layer composed of a second compound semiconductor is grown by step-flow, while changing the composition in the same terrace. Then, the epitaxial crystal substrate is manufactured by growing, on the composition modulation layer, the epitaxial layer composed of the third compound semiconductor having the lattice constant different from that of the first compound semiconductor.

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Ibaraki, Japan

Koji Kakuta