Nissin Electric Co., Ltd.

Nissin Ion Equipment Co., Ltd.

Koji Iwasawa

Nobuo Nagai

The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.

Ion implanting method and apparatus

An alarm management device includes: a data collection device for collecting alarm data generated by an apparatus to be managed; a database device for storing the collected alarm data; and an alarm statistic device for preparing alarm statistics using the stored alarm data. The alarm statistic device includes: a weight coefficient provision unit for providing, for each alarm, one or more weight coefficient types; a total weight coefficient calculation unit, for multiplying these weight coefficients to obtain a total weight coefficient for each alarm; a weighted case count calculation unit, for multiplying, by the total weight coefficient, a '1' that represents a case count for the generation of each alarm and for obtaining a weighted case count; and a statistic preparation unit, for adding the weighted case counts for the individual alarms to prepare statistics for the weighted number of alarm generation cases.

Alarm management method and apparatus therefor

An ion source device includes an ion source having a filament for emitting thermoelectrons, a current measuring device for measuring current flowing through the filament, a voltage measuring device for measuring voltage across the filament, a resistance operation device for computing a resistance value of the filament by using the current and the voltage measured by the current and voltage measuring devices, and a prediction operation device for computing a time till the application limits of the filament or a time left till the application limits of the filament.

Method of predicting a lifetime of filament in ion source and ion source device

The ion implantation apparatus deals with an ion beam as a charged particle beam and has an accelerating tube incorporating an electrostatic lens for converging/diverging it. The control of the electrostatic lens is carried out as follows. The swept ion beam is received by a single Faraday cup to measure the beam quantity I(n) and the beam width WD(p) of the ion beam . The evaluated values of the beam quantity and beam width with respect to prescribed standards are calculated. These evaluated values are assigned weights to calculate a unified evaluated value. The focusing voltage Vf applied to the electrostatic lens with the accelerating tube is controlled so that the unified evaluated value is increased. A waveform shaping controller and beam controller constitute a device for making such control.

Method of controlling electrostatic lens and ion implantation apparatus

Current density distributions of the ion beam in the scanning direction (the direction of X) at two points Z,and Z,on Z-coordinate are respectively measured by Faraday arrays. Using the thus measured current density distributions, a current density distribution in the scanning direction of the ion beam at an arbitrary position on Z-coordinate located in a workpiece is found by the method of interpolation. Using the thus found current density distribution, a waveform of scanning voltage V(t) of the ion beam is reformed so that a scanning speed of the ion beam can be relatively decreased at a position where the current density must be raised in the current density distribution and a scanning speed of the ion beam can be relatively increased at a position where the current density must be lowered. Due to the foregoing, a current density distribution in the scanning direction of the ion beam at an arbitrary position on Z-coordinate located in the workpiece is adjusted to a desired distribution.

Growing community of inventors

Kyoto, Japan

Koji Iwasawa