Shindengen Electric Manufacturing Company Limited

Koji Ito

Atsushi Ogasawara

Kazuhiko Ito

Koya Muyari

Shinichi Nagase

Provided is a method of manufacturing a semiconductor device according to the present invention, a ring-shaped electrode platewith an opening having a diameter smaller than a diameter of a semiconductor wafer W is disposed between a first electrode plateand a second electrode plate, the semiconductor wafer W is arranged between the ring-shaped electrode plateand the second electrode plate, and a glass film is formed on a glass film forming scheduled surface in a state where a potential lower than a potential Vof the second electrode plateis applied to the ring-shaped electrode plate. According to the method of manufacturing a semiconductor device of the present invention, even when the glass film forming step is performed using the semiconductor wafer where the base insulating film is formed on the glass film forming scheduled surface as the semiconductor wafer, lowering of deposition efficiency of fine glass particles on the outer peripheral portion of the semiconductor wafer can be suppressed and hence, highly reliable semiconductor devices can be manufactured with high productivity.

Method of manufacturing semiconductor device and glass film forming apparatus

Provided is a method of manufacturing a semiconductor device which includes, in the following order: a first step of preparing a semiconductor element which includes a pn junction exposure portion; a second step of forming an insulation layer such that the insulation layer covers the pn junction exposure portion; and a third step of forming a glass layer on the insulation layer where a layer made of glass composition for protecting a semiconductor junction is formed on the insulation layer and, thereafter, the layer made of glass composition for protecting a semiconductor junction is baked.

Method of manufacturing semiconductor device and semiconductor device

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO, BO, AlO, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50&#xb0; C. to 550&#xb0; C. falls within a range of 3.33&#xd7;10to 4.13&#xd7;10. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where 'a glass material containing lead silicate as a main component' is used.

Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

A resin-sealed semiconductor deviceof the present invention includes: a mesa-type semiconductor elementwhich includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resinwhich seals the mesa-type semiconductor element, wherein the mesa-type semiconductor elementincludes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.

Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device

A resin-sealed semiconductor device includes a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn junction exposure portion in an outer peripheral tapered region surrounding a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin which seals the mesa-type semiconductor element, wherein the glass layer is formed by forming a layer made of a predetermined glass composition for protecting a semiconductor junction which substantially contains no Pb such that the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition for protecting a semiconductor junction.

Resin-sealed semiconductor device and method of manufacturing the same

A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a glass raw material which contains at least ZnO, SiO, BO, AlOand at least two oxides of alkaline earth metals selected from a group consisting of BaO, CaO and MgO and substantially contains none of Pb, As, Sb, Li, Na and K, the glass composition for protecting a semiconductor junction containing no filler.

A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which contains at least SiO, BO, AlOand oxide of alkaline earth metal and substantially contains none of Pb, As, Sb, Li, Na, K and Zn, and contains no filler.

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO, AlO, ZnO, CaO and 3 mol % to 10 mol % of BO, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiOfalls within a range of 32 mol % to 48 mol %, a content of AlOfalls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of BOfalls within a range of 3 mol % to 10 mol %.

A glass composition for protecting a semiconductor junction contains at least SiO, BO, AlO, ZnO, and at least two oxides of alkaline earth metal selected from the group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K.

A glass composition for protecting a semiconductor junction contains at least SiO, AlO, MO, and nickel oxide, and substantially contains none of Pb, P, As, Sb, Li, Na and K (M in MO indicates one of alkali earth metals).

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Hanno, Japan

Koji Ito