Hitachi-high-technologies Corporation

Koji Ishiguro

Kaoru Umemura

Noriyuki Kaneoka

Hidetoshi Morokuma

Hiroyasu Shichi

Satoshi Tomimatsu

Hiroyuki Noda

Shun Kumano

Yoko Sato

Yukihiro Ogawa

Mitsuru Onuma

Tsuyoshi Somekawa

Shigeo Otsuki

Nami Ibi

Shiego Otsuki

Provided is a mass spectrometer capable of easy exchange of a measurement sample and suppressing a carryover. The mass spectrometer includes a mass spectrometry section, an ion source the internal pressure of which is reduced by a differential pumping from the mass spectrometry section and the ion source ionizes the sample gas, a sample container in which the sample gas is generated by vaporizing the measurement sample, a thin pipe that introduces the sample gas generated in the sample container into the ion source, an elastic tube of openable and closable that connects the sample container and the thin pipe, a pair of weirs that closes or opens the elastic tube so as to sandwich the elastic tube, and a cartridge that integrates the sample container, the thin pipe, and the elastic tube, and is detachable in a lump from a main body of the mass spectrometer.

Mass spectrometer

Sample preparation container

Component analyzer

Sample holder for a component analyzer

An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.

Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample

In the spectrometer, heavy loads are arranged centrally inside a case having a height smaller than a width, and having a depth smaller than the height. The heavy loads include a vacuum chamber, a vacuum pump which evacuates the vacuum chamber, a sample introduction unit which introduces a sample to be measured and evaporates the sample, an ionization unit which ionizes the evaporated sample and provides it to the vacuum chamber, and an ion detection unit which is connected to the vacuum chamber. Circuit board storage units which store a plurality of circuit boards with a predetermined space therebetween are formed on both sides along a width direction of the case.

An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.

An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.

Dual beam apparatus with tilting sample stage

A charged particle beam system, a sample processing method, and a semiconductor inspection system enable an accurate detection of a particle in a film without causing LMIS contamination and allow observation with an electron microscope quickly. A particlecausing a defect in a filmthat has been detected with a separate optical inspection system is detected with an optical microscopebased on position information acquired by the separate optical inspection system. A sampleis processed with a nonmetal ion beamso as to allow observation of the particlewith an electron microscope image or an ion microscope image, or ultimate analysis of the particlewith an EDX.

Charge particle beam system, sample processing method, and semiconductor inspection system

The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.

Ion beam processing apparatus

The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.

Apparatus for ion beam fabrication

Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam columnthat is connected to a vacuum vesseland irradiates a samplewith an ion beamof nonmetal ion species, a microsampling unithaving a probethat extracts a microsamplecut out from a sampleby the ion beam, a gas gunthat discharges a gas for bonding the microsampleand the probe, a pollution measuring beam columnA that is connected to the same vacuum vesselto which the ion beam columnis connected and irradiates an ion beam irradiation traces by the ion beam columnwith a pollution measuring beam, and a detectorthat detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam columnupon irradiation with the pollution measuring beam

Growing community of inventors

Hitachinaka, Japan

Koji Ishiguro