Riken Corporation

Koji Ishibashi

Yukio Kawano

Yoshinobu Aoyagi

Takuo Sugano

Akinobu Kanda

A terahertz wave detecting apparatus includes a semiconductor chipin which a 2-dimensional electron gasis formed at a constant position from its surface, and a carbon nanotube, a conductive source electrode, a drain electrodeand a gate electrodeprovided in close contact with the surface of the chip. The carbon nanotubeextends along the surface of the chip, where both ends of the tube are connected to the source electrode and the drain electrode of the chip, and the gate electrodeis spaced at a constant interval from the side surface of the carbon nanotube. Further, the apparatus includes a SD current detecting circuitfor applying a voltage between the source electrode and the drain electrode and for detecting SD current therebetween, a gate voltage applying circuitfor applying a variable gate voltage between the source electrode and the gate electrode, and a magnetic field generating devicefor applying a variable magnetic field to the chip.

Method and apparatus for detecting terahertz waves

A near-field terahertz wave detector comprises a semiconductor chip () whose longitudinal electrical resistance along its surface changes due to a near-field wave of a terahertz wave (), an insulating film () which covers the surface of the semiconductor chip, and a conductive film () able to shield the terahertz wave by covering the surface of the insulating film. The conductive film () has an aperture () whose maximum size is one digit or more smaller than the wavelength of the terahertz wave. Further, a planar conductive probe () is provided between the conductive film () and the semiconductor chip (). The conductive probe () is insulated from the conductive film () by the insulating film (), and a tip () of the conductive probe () is located inside the aperture (). It is possible to increase a signal-to-noise ratio by significantly reducing the effect of a far-field wave, thereby enabling a near-field wave to be detected with high efficiency and increasing the resolution of an object by the near-field wave to one tenth or less of the wavelength.

Near-field terahertz wave detector

A terahertz wave detecting apparatus includes a semiconductor chip, a two-dimensional graphene, a conductive source electrode, and a drain electrodeand a gate electrode. The two-dimensional grapheneis connected to the source electrode and the drain electrode. The apparatus further includes a SD voltage detection circuit, a gate voltage applying circuitand a magnetic field generating device

Apparatus and method for detecting terahertz wave

A single-flux-quantum digital device includes a first superconducting line extended in a large ring, a second superconducting line connected to the first superconducting line, a superconducting single electron transistor for regulating a supercurrent flowing through the second superconducting line, and a small tunnel junction device for detecting a change in the supercurrent flowing through the first superconducting line. The first superconducting line is extended in a large ring. The second superconducting line divides the large ring into two small rings which are substantially the same in shape and area. The small tunnel junction device is connected to a point where the first and the second superconducting line are joined.

Growing community of inventors

Saitama, Japan

Koji Ishibashi