Mitsui Chemicals, Inc.

Koji Inoue

Hirofumi Tanaka

Yasuhisa Kayaba

Shoko Ono

Hiroko Wachi

Takashi Oda

Keisuke Kawashima

Tsutami Misawa

Tsuneji Suzuki

Akira Ogiso

Tadashi Koike

Tsutomu Ishida

Hisashi Tsukahara

Yuji Inatomi

Teruo Muraishi

Keiji Ueno

Phala Heng

Hiroyoshi Shiozaki

Ryousuke Nara

Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing semiconductor processing material, and semiconductor device

A material for forming an underlayer film according to the present invention is a material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the material including a cyclic olefin polymer which has a repeating structural unit [A] represented by Formula (1) and a repeating structural unit [B] represented by Formula (2), in which a molar ratio [A]/[B] of the structural unit [A] to the structural unit [B] in the cyclic olefin polymer is greater than or equal to 5/95 and less than or equal to 95/5.

Material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate

Provided is a resin material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the resin material including a cyclic olefin polymer (I), in which a temperature at an intersection between a storage modulus (G') curve and a loss modulus (G&#x2033;) curve in a solid viscoelasticity of the resin material for forming an underlayer film which is as measured under conditions of a measurement temperature range of 30&#xb0; C. to 300&#xb0; C., a heating rate of 3&#xb0; C./min, and a frequency of 1 Hz in a nitrogen atmosphere in a shear mode using a rheometer is higher than or equal to 40&#xb0; C. and lower than or equal to 200&#xb0;.

Resin material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate

A substrate intermediary body includes: a substrate having a hole in a thickness direction, and a conductor being disposed in the hole; and an adhesion layer formed on a wall surface of the hole. The adhesion layer contains a reaction product of a polymer (A) having a cationic functional group and having a weight-average molecular weight of from 2,000 to 1,000,000 and a polyvalent carboxylic acid compound (B) having two or more carboxyl groups per molecule or a derivative thereof.

Substrate intermediary body, through-hole via electrode substrate, and through-hole via electrode formation method

Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si&#x2014;O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more &#x2014;C(&#x2550;O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more &#x2014;C(&#x2550;O)OX groups are &#x2014;C(&#x2550;O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

The invention provides a sealing composition including: polymer (A) containing a cationic functional group and having a weight average molecular weight of from 2,000 to 1,000,000; and a benzotriazole compound; in which the content of the polymer (A) is from 0.05 parts by mass to 0.20 parts by mass with respect to 100 parts by mass of the sealing composition; in which the content of the benzotriazole compound in the sealing composition is from 3 ppm by mass to 200 ppm by mass; and in which the sealing composition has a pH of from 3.0 to 6.5.

Sealing composition and method of manufacturing semiconductor device

A method for manufacturing a filling planarization film, the method including: a first coating step of applying a first coating liquid, containing a polyamine and a first solvent, to a region including a recessed part of a member having the recessed part, to fill the first coating liquid into the recessed part; and a second coating step of applying a second coating liquid, containing an organic substance having two or more carboxyl groups and a second solvent having a boiling point of 200&#xb0; C. or less and an SP value of 30 (MPa)or less, to the region including the recessed part of the member into which the first coating liquid has been filled.

Method for manufacturing filling planarization film and method for manufacturing electronic device

Ethylene is oligomerized with a catalyst in which nickel is supported on a support containing silica and alumina. The catalyst has little deterioration over long periods and affords oligomers with high productivity. The ethylene oligomerization catalyst includes a support and a nickel compound supported on the support, the support including silica and alumina, and the amount of nickel supported is in the range of 0.0001 to 1 wt % based on the weight of the support, and the molar ratio of silica to alumina in the support (SiO/AlO) is in the range of 100 to 2000. In a process of the invention, ethylene is oligomerized with use of the catalyst.

Ethylene oligomerization catalyst and use thereof

An optical recording medium containing one or more compounds selected from imide compounds having a metallocene residue in a recording layer and an imide compound represented by a general formula (1): wherein a ring AR represents a substituted or unsubstituted aromatic ring residue or a residue formed by combining two or more aromatic ring residues via one or more linking groups; n represents the number of imide groups bonded to the ring AR; Arepresents any one of substituents Ato Abonded to a nitrogen atom of each imide group; and m represents an integer of from 1 to n, with the proviso that at least one substituent selected from the group consisting of Ato Ais one having at least one substituted or unsubstituted metallocene residue.

Growing community of inventors

Ichihara, Japan

Koji Inoue