Fujitsu Component Limited

Renesas Electronics Corporation

Renesas Technology Corp.

Koji Iizuka

Akio Nakamura

Takeshi Okuyama

Shinichiro Akieda

Naoyuki Nagao

Hidenori Sato

Takeshi Kamino

Mitsuhiro Sekizawa

Takahiro Tomimatsu

A hybrid-bonding-type solid-state imaging device is provided that prevents moisture from entering through the bonded interface and other areas. The solid-state imaging device includes a first interconnect structure over a sensor substrate and a second interconnect structure over a logic substrate, and the first and second interconnect structures are bonded together. At the bonded surface between the first and second interconnect structures, bonding pads formed in the first interconnect structure are bonded to bonding pads formed in the second interconnect structure. Eighth layer portions of a first seal ring formed in the first interconnect structure are bonded to eighth layer portions of a second seal ring formed in the second interconnect structure.

Solid-state imaging device including a sensor substrate and a logic substrate

There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.

Semiconductor device and manufacturing method of the same

An operation panel includes a first board, a second board, a load sensor provided between the first board and the second board, and a clip that holds together the first board and the second board. The load sensor detects the magnitude of a force applied to the first board.

Operation panel whose thickness is adjustable with screw operably inserted into hole formed in clip that clips multiple boards and load sensor sandwiched therebetween

An imaging device is provided, in which the dynamic range of still pictures can be suppressed from being decreased. In the imaging device, a photodiode including an n-type impurity region and a photodiode including an n-type impurity region are formed in a p-type well. An n-type impurity region is formed between the n-type impurity region on one side and that on the other side so as to contact each of the two. The impurity concentration of the last-formed n-type impurity region is set to be lower than those of the first-formed n-type impurity regions.

Imaging device and manufacturing method thereof

A current sensor including: a current bar through which a current flows; a magnetic substance core configured to cover at least a part of the current bar; a magnetic field measurement element that measures a magnetic field generated by the current flowing through the current bar; a substrate to which the magnetic substance core and the magnetic field measurement element are fixed; and a magnetic substance cover that covers the magnetic substance core, and aligns the magnetic substance core by being fixed to the substrate; wherein slits corresponding to a width of the current bar are formed on side surfaces of the magnetic substance cover, and the current bar is aligned with the magnetic substance cover by protruding from the slits.

Current sensor, table tap with current sensor, and magnetic substance cover for current sensor

A power distribution apparatus for supplying power from a direct-current power supply to a load via a first connector and a second connector includes a sensor unit configured to detect connected and disconnected states between the first connector and the second connector, a switch unit configured to make and break a connection between the first connector and the direct-current power supply, a receiver unit configured to receive a signal indicating whether to supply or cut off power to the load, and a control unit configured to control the switch unit to make or break the connection in response to the signal received by the receiver unit and the connected and disconnected states between the first connector and the second connector detected by the sensor unit.

Power distribution apparatus supplying direct-current power

A keyboard device includes: an elastic portion that is provided on any one of a pair of opposed end faces, abuts on an abutting portion provided on a keyboard holding device, and biases the keyboard device in a direction toward another end face from one end face on which the elastic portion is provided; a first engaging portion that is provided on the one end face, and engages with a third engaging portion provided on the keyboard holding device; and a second engaging portion that is provided on the another end face, and engages with a fourth engaging portion provided on the keyboard holding device by the bias of the elastic portion.

Keyboard device, keyboard holding device and information input device

An attachment device includes: an attachment attachable to a rack; and a bracket attachable to a switch device and engageable with the attachment, and including a hold portion for holding a cable, wherein the attachment attached to the rack is engaged with the bracket attached to the switch device, whereby the switch device is supported by the rack.

Attachment device

A semiconductor device manufacturing method is provided which is capable of suppressing variation of the resistance value of resistive interconnection and preventing variation of transistor performance. A gate electrode and a resistive interconnection are formed on a substrate and impurity ions are implanted into the surface of the substrate to form source/drain regions (diffusion layers:A,B) on both sides of the gate electrode. Also, impurity ions are implanted to control the resistance value of the resistive interconnection. Next, a sidewall film is formed to cover the resistive interconnection. Then a heat treatment is performed to activate the source/drain regions (diffusion layers:A,B).

Growing community of inventors

Tokyo, Japan

Koji Iizuka