Nichia Corporation

Koji Honjo

Masahiko Sano

Yukitoshi Marutani

Takao Yamada

Takeshi Kususe

Hisashi Kasai

Kazuyuki Akaishi

Hitoshi Maegawa

Susumu Harada

Akira Kitano

Koichiro Deguchi

A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.

Semiconductor light emitting element

To provide a point emission type light emitting element that restricts the light emitting area within a sufficiently tiny region and can be manufactured at a low cost, the point emission type light emitting element is a light emitting element that has stripe ridge comprising an n-type layer, an active layer and a p-type layer that are formed from semiconductors on a substrate, so as to emit light from one end face of the stripe ridge, wherein the stripe ridge has a protruding portion on the end face described above and the surface of the light emitting element is covered with an shading film except for the tip of the protruding portion.

Point emission type light emitting element and concentrating point emission type light emitting element

Growing community of inventors

Anan, Japan

Koji Honjo