Nec Corporation

The Furukawa Electric Co., Ltd.

Nec C Orporation

Tohoku Techno Arch Co., Ltd.

Koji Hataya

Yasuhiro Okamoto

Hironobu Miyamoto

Takashi Inoue

Yuji Ando

Tatsuo Nakayama

Masaaki Kuzuhara

Takeshi Wada

Takeshi B Nishimura

Hirokazu Yoshida

Hidemi Kato

Kazuhiko Kurusu

Toshio Tani

Kazutomi Miyoshi

Porous silicon particles and complex porous silicon particles suitable for negative electrode materials etc. for lithium-ion batteries, which achieve high capacity and good cycling characteristics, are provided. Porous silicon particles formed by the joining of a plurality of silicon microparticles, and having an average particle diameter of 0.1 &#x3bc;m to 1000 &#x3bc;m, a three-dimensional network structure having continuous gaps, an average porosity of 15 to 93%, and a structure in which the particles of a whole particle are uniform. Complex porous silicon particles formed by the joining of a plurality of silicon microparticles and a plurality of silicon compound particles, and characterized by containing a compound of silicon and composite elements, having an average particle diameter of 0.1 &#x3bc;m to 1000 &#x3bc;m, and having a three-dimensional network structure having continuous gaps.

Porous silicon particles and complex porous silicon particles, and method for producing both

The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate (), there are formed a buffer layer () made of a first GaN-based semiconductor, a carrier traveling layer () made of a second GaN-based semiconductor and a carrier supplying layer () made of a third GaN-based semiconductor. A recess structure () is made by eliminating a part of a first insulation film () and a part of the carrier supplying layer (). Next, a gate insulation film () is deposited, and then a gate electrode () is formed so as to fill up the recess portion () and cover on over an area where the first insulation film () remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.

Semiconductor device

An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.

Ohmic electrode structure of nitride semiconductor device

Growing community of inventors

Tokyo, Japan

Koji Hataya