Canon Kabushiki Kaisha

Koji Hara

Nobutaka Ukigaya

Yukinobu Suzuki

Takeshi Aoki

Yoshiyuki Nakagawa

Hideki Ina

Yusuke Onuki

Hajime Ikeda

Takehito Okabe

Satoshi Ogawa

Toshiyuki Ogawa

Ryo Yoshida

Tsutomu Tange

Aiko Kato

Nobuaki Kakinuma

Yoshihisa Kawamura

Yasuhiro Kawabata

Junya Tamaki

Takayasu Kanesada

Shinsuke Kojima

Atsushi Kanome

Norihiko Nakata

Akira Oseto

Tatsunori Kato

Ryunosuke Ishii

Satoshi Yoshizaki

Masahiko Kondo

Shinichi Saeki

Tsuyoshi Miyagawa

A photoelectric conversion apparatus includes a pad, a first protection circuit provided on a first semiconductor substrate, and a second protection circuit provided on a second semiconductor substrate. The first semiconductor substrate, which includes a plurality of photoelectric conversion units each receiving incident light and generating signal charge, and the second semiconductor substrate, which includes at least one signal processing circuit that processes an input signal based on the generated signal charge, are laminated. The pad receives a power supply voltage as input from an outside of the photoelectric conversion apparatus. At least one of the first protection circuit or the second protection circuit is provided on an outside of a region in which the pad is provided, in planar view. At least one of the first protection circuit or the second protection circuit is connected to the pad.

Photoelectric conversion apparatus having semiconductor substrates and protection circuits

A semiconductor apparatus including: a first substrate; a first wiring structure; a second substrate; and a second wiring structure, wherein the first wiring structure has a first wiring layer bonded to wiring of the second wiring structure, a second wiring layer connected to the first wiring layer by a first via, and a third wiring layer connected to the second wiring layer by a second via, at least part of the second via is located at a range distanced, by at least a width of the first via, from an axis of the first via, a thickness of the second wiring layer is less than the width of the first via, a major constituent of the first wiring layer, the second wiring layer and the first via is copper, and a layer that is made from a material different from copper is disposed between the first via and the second wiring layer.

Semiconductor apparatus

A disclosed photoelectric conversion device includes: a semiconductor layer in which a photoelectric converter is provided; a substrate arranged on one face side of the semiconductor layer; and an interconnection structure arranged between the semiconductor layer and the substrate. The interconnection structure includes a first insulating film made of a first insulating material and a second insulating film provided on the semiconductor layer side of the first insulating film and made of a second insulating material, the first insulating material permeates more hydrogen than the second insulating material, an insulating member made of the first insulating material is located between the first insulating film and the semiconductor layer, and the first insulating film and the insulating member are connected to each other via an opening provided in the second insulating film.

Photoelectric conversion device

A photoelectric conversion apparatus includes a plurality of pixels. Each of the plurality of pixels includes a first photoelectric conversion region and a second photoelectric conversion region. A first semiconductor region is disposed between the first photoelectric conversion region and the second photoelectric conversion region. The first photoelectric conversion region and the second photoelectric conversion region contain a first element mainly forming the first photoelectric conversion region and the second photoelectric conversion region, and the first photoelectric conversion region and the second photoelectric conversion region contain a second element. The first semiconductor region contains the first element and a third element. A mass number of the third element is twice or more a mass number of the first element.

Photoelectric conversion apparatus and equipment

A curved surface constituting a convex surface or a concave surface of each of a plurality of lenses includes at least a silicon nitride layer and another silicon nitride layer. An interlayer having a composition different from a composition of the silicon nitride layer and a composition of the other silicon nitride layer is arranged between the silicon nitride layer and the other silicon nitride layer, and a thickness of the interlayer is less than a thickness of the silicon nitride layer and a thickness of the other silicon nitride layer.

Optical apparatus and equipment

Provided is a photoelectric conversion apparatus including: an interlayer insulating film that covers a semiconductor layer and has a contact hole positioned above a gate electrode; a contact plug that is disposed in the contact hole and connected to the gate electrode; a light-shielding film that is positioned between the interlayer insulating film and the semiconductor layer and includes a first part covering a charge holding portion and a second part covering an upper surface of the gate electrode; and a dielectric layer that is positioned between the second part and the gate electrode, in which a relative dielectric constant of the dielectric layer is lower than a relative dielectric constant of the interlayer insulating film.

A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.

Semiconductor apparatus, system, and method of producing semiconductor apparatus

A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.

Method of manufacturing photoelectric conversion device

A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.

Semiconductor device and semiconductor device manufacturing method using patterning and dry etching

A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.

Growing community of inventors

Ichikawa, Japan

Koji Hara