Pioneer Video Corporation

Pioneer Electronic Corporation

Kawasaki Steel Corporation

Other

Pioneer Electric Corporation

Koji Hanihara

Makoto Mizuno

Itaru Tsuchiya

Yasuo Yagi

Masanori Iwahashi

Toshihiro Shimizu

Masaaki Fujishima

Kenichi Hanada

Kunihisa Ishii

Motohisa Ohkuni

An uppermost metal wiring layer is formed of titan Ti and titan nitride TiN formed thereon, on which tungsten W for filling a via hole can be deposited. The via hole is filled with W. The surface of a metal wiring layer below the uppermost metal wiring layer is covered with a low reflectivity film made of titan nitride. Thus, light incident on the surface of the semiconductor chip is prevented from reaching a substrate transistor within a semiconductor device and malfunctioning of the semiconductor device is prevented.

Semiconductor device reeventing light from entering its substrate transistor and the same for driving reflection type liquid crystal

In a semiconductor chip for Si chip based liquid crystal having insulating films and interconnection layers formed on a semiconductor substrate, a thin interconnection layer made of TiN/Ti having strong erosion resistance is formed on an uppermost interlayer insulating film having a flat surface to substantially expose the thin uppermost interconnection layer to the surface of the chip, the uppermost insulating film is covered with a protection film made of p-SiN and a thin insulating film having a mirror-like flat surface is formed on the uppermost interconnection layer.

Multiple metallization structure for a reflection type liquid crystal

A liquid crystal display device has a semiconductor substrate. A plurality of switching elements are arranged on the substrate in matrix, and a plurality of pixel electrodes are provided above the switching elements, arranged in matrix corresponding to the switching elements. A liquid crystal layer is provided on the pixel electrodes. The switching element is connected with a corresponding pixel electrode by a wiring layer. Dummy layers are provided in the same level as the wiring layer so that a surface of the dummy layer is substantially flush with a surface of the wiring layer.

Reflection liquid crystal display and a semiconductor device for the

A method for manufacturing semiconductor device is provided, this method comprises the steps of: depositing a metal film for forming wirings on a substrate; forming a wiring layer, wherein dummy wiring is inserted between wiring space where the dummy wiring can be inserted, and wiring space, where the dummy wiring cannot be inserted, is reduced by widening wiring pattern facing the wiring space; forming an interlayer insulating film on said wiring layer; and flattening surface of the interlayer insulating film. The film can be flattened by a CMP method or by an etchback of entire surface of the film. It is possible to flatten the surface of the semiconductor device cost-effectively and precisely.

Method for manufacturing semiconductor device and reticle for wiring

Growing community of inventors

Isawa-cho, Japan

Koji Hanihara