Sony Semiconductor Solutions Corporation

Sony Corporation

Koji Furumi

Atsushi Toda

Tomoyuki Hirano

Shuji Manda

Ryosuke Matsumoto

Gen Kasai

There is provided an imaging device including a first semiconductor layer formed on a semiconductor substrate, a second semiconductor layer formed on the first semiconductor layer and having an opposite conductivity type to the first semiconductor layer, a pixel separation portion that demarcates a pixel region including the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer from one surface side of the semiconductor substrate, and a metal layer connected to the second semiconductor layer from a light irradiation surface side which is the other surface of the semiconductor substrate and buried in the pixel separation portion in at least a part of the semiconductor substrate in a thickness direction.

Imaging device with improved short-wavelength sensitivity

Provided is an imaging device including a light source that radiates light in at least two different wavelength bands and an imaging element that acquires signals individually from the light in the two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Imaging device

A semiconductor memory device includes a smaller number of elements. A method for reading stored data within the semiconductor memory device suppresses the reduction in the static noise margin accompanying a voltage drop of a power supply voltage, and improves the degree of integration of the circuit.

Growing community of inventors

Kanagawa, Japan

Koji Furumi