Hitachi Chemical Company, Ltd.

Hitachi, Ltd.

Koji Fujisaki

Tomohiro Iwano

Hisataka Minami

Toshiaki Akutsu

Shunichi Numata

Takao Miwa

Noriyuki Kinjo

Takayoshi Ikeda

Hisae Shimanoki

Junichi Imaizumi

Yoshikatsu Mikami

Shun-ichi Numata

Keiji Watanabe

Toshiyuki Mine

Daisuke Ryuzaki

Masaharu Kinoshita

Toshio Miyamoto

Hiroshi Suzuki

Kunio Miyazaki

Masatoshi Morishita

Daisuke Makino

Naoki Tega

Ryuji Watanabe

Akio Nishikawa

Yoshiaki Okabe

Osamu Miura

Keisuke Kobayashi

Takashi Takahama

Takeshi Komaru

Yukio Okoshi

Rie Tawata

Ikeda Takayoshi

A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Sensor characteristic evaluation method and charged particle beam device

The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, and at least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers.

Polishing agent, polishing agent set, and substrate polishing method

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces absorbance of 0.035 or more for light having a wavelength of 400 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59&#xd7;10G.

Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, and produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.

The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.

Abrasive, abrasive set, and method for abrading substrate

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces a liquid phase having a content of a non-volatile component of 300 ppm or more when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59&#xd7;10G.

In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.

Silicon carbide semiconductor device and manufacturing method of the same

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and a difference between a NOconcentration of an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % and a NOconcentration after retaining the aqueous dispersion at 60&#xb0; C. for 72 hours is 200 ppm or less.

A polishing agent according to one embodiment of the present invention contains a liquid medium, an abrasive grain including a hydroxide of a tetravalent metal element, a polymer compound having an aromatic ring and a polyoxyalkylene chain, and a cationic polymer, wherein a weight average molecular weight of the polymer compound is 1000 or more.

Polishing agent, polishing agent set and method for polishing base

Low-thermal-expansivity polyimides have a linear rigid skeleton, so that adhesion between perfectly cured low-thermal-expansivity polyimide films is very low. On the other hand, a film of a polyimide having a flexible skeleton shows high adhesiveness even after perfect curing, so that it is possible to enhance adhesion between the low-thermal-expansivity polyimide films by interposing a polyimide having a flexible skeleton. A flexible polyimide thin film is formed as a highly adhesive film on a low-thermal-expansivity polyimide film in a half-cured state, then metallic wiring is applied thereon, followed by formation of another highly adhesive thin film in a half-cured state, and then a low-thermal-expansivity polyimide film is further formed thereon. It is possible to provide a multilayer wiring structure which has improved adhesion between the low-thermal-expansivity polyimide film and the wiring pattern layer or the substrate.

Method for forming multilayer wiring construction

A process of forming a patterned polyimide film includes the step of conversion of a polyimide precursor into polyimide. The improvement is imidizing the precursor by means of a chemical imidizing reagent. Typically a film of polyimide precursor is formed on a substrate, and mask which is negative with respect to the desired pattern is formed on the film. The film is contacted through the mask with a chemical imidizing reagent to effect imidization of unmasked portions, thereby forming polyimide. The mask and masked portions of the film are removed, leaving the desired polyimide pattern. High temperatures and harmful etchants can be avoided.

Process of forming a patterned polyimide film and articles including

An acid dianhydride complex which is characterized in anti-hydrolysis, good stability, and high solubility in an organic solvent, is prepared by a reaction of a basic organic compound having a donor number of at least 20 and being free from an active hydrogen atom in the molecule and a carboxylic dianhydride compound.

Acid anhydride complex and process for producing same, and composition

The present invention provides a process for producing a metal-polyimide composite material such as a wiring board. In production thereof, deterioration of polyamide film due to oxidation during imidization of a polyimide precursor in contact with metal such as copper or silver can be prevented. The present invention is characterized by using a polyimide precursor having an acidic functional group which is masked. Examples of the polyamide precursor are polyamic acid epoxy adducts, amido polyamic acids, silylated polyamic acids, etc.

Process for producing metal-polyimide composite article

A resin material comprising a polyamide having as chemical structural unit at least one aromatic ring which can rotate around its molecular axis but has no flexibility at another direction, said polyimide being oriented at least at a uniaxial direction, has a low thermal expansion coefficient and can be shaped together with an inorganic material into one body to give a composite shaped article.

Growing community of inventors

Kokubunji, Japan

Koji Fujisaki