Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Koji Dairiki

Shunpei Yamazaki

Hidekazu Miyairi

Koichiro Tanaka

Akihisa Shimomura

Chiho Kokubo

Atsuo Isobe

Takuya Tsurume

Tomoko Tamura

Masahiko Hayakawa

Tatsuya Arao

Mai Akiba

Hiroshi Shibata

Yasuhiro Jinbo

Toshiyuki Isa

Hideaki Kuwabara

Yoshitaka Dozen

Junichi Koezuka

Hideto Ohnuma

Toru Mitsuki

Satoshi Kobayashi

Masayuki Kajiwara

Naoto Kusumoto

Junya Maruyama

Osamu Nakamura

Satoshi Toriumi

Aiko Shiga

Hajime Kimura

Toru Takayama

Tamae Takano

Kenji Kasahara

Tomoyuki Aoki

Eiji Sugiyama

Yoshiyuki Kurokawa

Hiromichi Godo

Mitsuhiro Ichijo

Taketomi Asami

Daisuke Kawae

Fumito Isaka

Sho Kato

Susumu Okazaki

Sachiaki Teduka

Takayuki Ikeda

Satoshi Murakami

Takuya Hirohashi

Shigeki Komori

Ikuko Kawamata

Yuji Egi

Makoto Furuno

Tsudoi Nagi

Jun Koyama

Hisashi Ohtani

Akiharu Miyanaga

Masahiro Takahashi

Tetsuhiro Tanaka

Yuugo Goto

Yoshiaki Yamamoto

Konami Izumi

Yoshitaka Moriya

Sachiaki Tezuka

Takayuki Inoue

Kaori Ogita

Tomohiro Kimura

Kengo Akimoto

Hideomi Suzawa

Masashi Tsubuku

Kunihiko Suzuki

Takeshi Aoki

Yoshitaka Yamamoto

Takeyoshi Watabe

Masashi Oota

Ryo Arasawa

Mayumi Mikami

Shunichi Ito

Ryu Komatsu

Tomokazu Yokoi

Kosei Nei

Yumiko Saito

Takafumi Mizoguchi

Erika Takahashi

Yoichi Kurosawa

Daisuke Ohgarane

Yurika Sato

Makoto Foruno

Osama Nakamura

A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.

Data processing device and driving method for selectively stopping images to a region when it is held by a user right or left hand

A photoelectric conversion element includes a first electrode, a second electrode, a first layer, and a second layer. The first layer is provided between the first electrode and the second electrode. The second layer is provided between the first layer and the second electrode. The first layer contains selenium. The second layer contains In, Ga, Zn, and O. The second layer may contain an In&#x2014;Ga&#x2014;Zn oxide. The selenium may be crystalline selenium. The first layer functions as a photoelectric conversion layer. The second layer functions as a hole injection blocking layer. The In&#x2014;Ga&#x2014;Zn oxide may have a c-axis aligned crystal.

Photoelectric conversion element and imaging device

Data processing device and driving method thereof for a flexible touchscreen device accepting input on the front, rear and sides

Data processing device having flexible position input portion and driving method thereof

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Semiconductor device and semiconductor device production system

Data processing device and driving method thereof

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

Method for manufacturing semiconductor device

One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode.

Semiconductor device

A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which is provided over a substrate and has a region including five or less areas where a transmission electron diffraction pattern showing discontinuous points is observed when an observation area is changed one-dimensionally within a range of 700 nm, using a transmission electron diffraction apparatus with an electron beam having a probe diameter of 1 nm.

Oxide semiconductor film and semiconductor device

Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.

Transmission electron diffraction measurement apparatus and method for measuring transmission electron diffraction pattern

Provided is a method for manufacturing a semiconductor device with fewer masks and in a simple process. A gate electrode is formed. A gate insulating film, a semiconductor film, an impurity semiconductor film, and a conductive film are stacked in this order, covering the gate electrode. A source electrode and a drain electrode are formed by processing the conductive film. A source region, a drain region, and a semiconductor layer, an upper part of a portion of which does not overlap with the source region and the drain region is removed, are formed by processing the upper part of the semiconductor film, while the impurity semiconductor film is divided. A passivation film over the gate insulating film, the semiconductor layer, the source region, the drain region, the source electrode, and the drain electrode are formed. An etching mask is formed over the passivation film. At least the passivation film and the semiconductor layer are processed to have an island shape while an opening reaching the source electrode or the drain electrode is formed, with the use of the etching mask. The etching mask is removed. A pixel electrode is formed over the gate insulating film and the passivation film.

Growing community of inventors

Kanagawa, Japan

Koji Dairiki