Kabushiki Kaisha Toshiba

Fuji Electric Co., Ltd.

Kioxia Corporation

Toshiba Memory Corporation

Fuji Electric Fa Components & Systems Co., Ltd.

Other

Princeton University

Asahi Kasei E-materials Corporation

Koji Asakawa

Akira Fujimoto

Shigeki Hattori

Ryota Kitagawa

Hideyuki Nishizawa

Shinobu Sugimura

Toshiro Hiraoka

Toru Ushirogouchi

Naomi Shida

Tsutomu Nakanishi

Yasuyuki Hotta

Naoshi Uchida

Satoshi Saito

Satoshi Mikoshiba

Yoshiaki Fukuzumi

Yoshihiro Akasaka

Tomoaki Sawabe

Hiroko Nakamura

Yasuhiro Takahashi

Naoko Kihara

Kenji Nakamura

Reika Ichihara

Yusuke Tanaka

Hideaki Aochi

Atsushi Inoue

Masatoshi Sakurai

Katsuyuki Naito

Masayuki Saito

Kenji Suzuki

Yoshihiko Nakano

Goh Itoh

Shinji Murai

Yumi Fukuda

Masakazu Yamagiwa

Masahiko Yamamoto

Hitoshi Kobayashi

Yujiro Hara

Seiji Morita

Satoshi Tanaka

Toshiya Kotani

Yutaka Sato

Yoshinori Iida

Kenji Sano

Keiji Suzuki

Takeshi Okino

Masaya Terai

Norikatsu Sasao

Eishi Tsutsumi

Makoto Nakase

Shinji Nunotani

Takanobu Kamakura

Katsunori Kuboyama

Kumi Masunaga

Tsukasa Tada

Kenichi Ohashi

Hideto Yamagata

Shigeru Matake

Atsushi Hieno

Tatsunori Takahashi

Kentaro Toyama

Takuya Naito

Jun Oyama

Yuriko Seino

Takeyuki Suzuki

Tsukasa Azuma

Hiroyuki Hieda

Hitoshi Sugiyama

Yasuhiko Akaike

Hiroyuki Fuke

Ryosuke Yamamoto

Yutaka Majima

Misako Morota

Koji Nomura

Shuji Hayase

Miki Mori

Hidefumi Yasuda

Akinori Hongu

Junichi Tonotani

Hiroshi Nomura

Keizo Inoue

Shigeru Machida

Kenji Todori

Douglas H Adamson

Reiko Yoshimura

Koichi Kokubun

Rumiko Hayase

Paul Michael Chaikin

Hisayo S Momose

Akira Yoshizumi

Yoshinori Funaki

Kiyoharu Tsutsumi

Yoshiaki Kawamonzen

Taeko I Urano

Masayuki Sekimura

Hirokazu Niki

Atsuko Yamashita

Shunji Yoshitake

Isamu Nagahiro

Nobuyuki Momo

A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.

Method for manufacturing metal fluoride-containing organic polymer film, patterning method, and method for manufacturing semiconductor device

A method for manufacturing an indium-containing organic polymer film includes forming an organic polymer film on a base body, infiltrating the organic polymer film with an alkylindium having an alkyl group having 2 to 4 carbon atoms, and oxidizing the organic polymer film infiltrated with the alkylindium.

Method for manufacturing indium-containing organic polymer film, patterning method, and method for manufacturing semiconductor device

A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3),

Compound, polymer, pattern forming material, pattern forming method, and method of manufacturing semiconductor device

According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.

Polymer material, composition, and method of manufacturing semiconductor device

A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where Ris H or CH, each Ris a hydrocarbon group of Cwhere a carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of Ccarbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.

Compound, polymer, pattern forming material, and manufacturing method of semiconductor device

A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (1) described below, wherein, Ris a hydrogen atom or a methyl group, each Rindependently is an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or an s-butyl group, and a monomer unit derived from a compound represented by a general formula (2) described below, wherein, Ris a hydrogen atom or a methyl group, each Rindependently is a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an s-butyl group, or a t-butyl group.

Polymer for pattern forming material

According to one embodiment, a template includes a base body, and a first film. The base body has a first surface and a second surface. The first surface includes silicon oxide and spreads along a first plane. The second surface crosses the first plane. The first film includes aluminum oxide. A direction from the second surface toward the first film is aligned with a direction perpendicular to the second surface. A thickness of the first film along the direction perpendicular to the second surface is not less than 0.3 nm and not more than 10 &#x3bc;m. The first surface includes an unevenness.

Template, method for manufacturing template, and pattern formation method

A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.

Pattern formation method and method of manufacturing semiconductor device

A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sporbital and 5 atom % or more carbon atoms having an sporbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.

Method of forming pattern, method of manufacturing semiconductor device, and pattern-forming material

A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.

Method of forming pattern and method of manufacturing semiconductor device

According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.

Pattern formation material and pattern formation method

A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

Pattern forming material and pattern forming method

According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device

Growing community of inventors

Kawasaki, Japan

Koji Asakawa