Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Mitsubishi Gas Chemical Company, Inc.

Nidec Corporation

Koji Ando

Rei Takeaki

Tadashi Maegawa

Yosuke Yasutake

Takuya Kishimoto

Kenji Yamada

Katsuhiko Miya

Hideaki Kitamura

Hitoshi Nakai

Hiroyuki Araki

Noritake Sumi

Takahiro Kikuichi

Kei Suzuki

Yoshihisa Kato

Fumihiro Umeda

Tomoyuki Azuma

Tomohiro Motono

A substrate processing apparatus according to the present invention includes a support tray that is configured in such a manner that a residual liquid getting in between a lower surface of a substrate and a substrate facing surface of the support tray is trapped in a groove. The support tray further includes a discharge part through which the residual liquid trapped in the groove is discharged from the groove through a discharge part. As a result, backflow of the residual liquid is prevented effectively, thereby preventing re-adhesion of the residual liquid to the upper surface of the substrate.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Substrate processing apparatus

Pure water, a mixed solution, and an organic solvent are applied to a substrate in this order. The organic solvent is then removed by rotation. The mixed solution is a mixture of pure water and the organic solvent, and has a surface tension lower than that of the pure water. Since the mixed solution has a solubility in pure water, which is higher than that of the organic solvent, local drying on the upper surface becomes less likely at an interface between the mixed solution and the pure water, which suppresses collapse of pattern elements. Since the temperature of the substrate is raised by the mixed solution having a temperature higher than room temperature, it is possible to reduce the time required for a process related to drying.

A substrate treatment method includes a substrate holding unit which horizontally holds a substrate; a rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; and a first nozzle having an opposing face to be opposed to a lower surface of the substrate inward of a peripheral portion of the substrate in spaced relation to the lower surface of the substrate during rotation of the substrate by the rotating unit and a treatment liquid spout provided in the opposing face for filling a space defined between the lower surface of the substrate and the opposing face with a treatment liquid spouted from the treatment liquid spout to keep the space in a liquid filled state; wherein the treatment liquid spreads outwardly over the lower surface of the substrate and further, flows around to a peripheral portion of an upper surface of the substrate.

Substrate treatment method

A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

A substrate treatment apparatus includes: substrate holding unit which horizontally holds a substrate; a rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; and a first nozzle having a first opposing face to be opposed to a region of a lower surface of the substrate inward of a peripheral portion of the substrate in spaced relation to the lower surface of the substrate during rotation of the substrate by the rotating unit and a treatment liquid spout provided in the first opposing face for filling a space defined between the lower surface of the substrate and the first opposing face with a treatment liquid spouted from the treatment liquid spout to keep the space in a liquid filled state.

Substrate treatment apparatus and substrate treatment method

A bearing retainer unit is formed by an insert-molding technique to cast a molded component of the bearing retainer unit utilizing a bearing bushing. A first mold die, having a circumferential surface shaped to correspond to at least a portion of the inner circumferential surface of a bearing-positioning portion of the molded component, and a second mold die, having an abutment that abuts against an axial end face of the first die, are readied. A molten material is then injected into the mold to form the molded part, thereby forming the die-parting line on the inner circumferential surface of the component's bearing positioning portion, positioned at the radially outer side of the abutment.

Bearing retainer unit and electric motor furnished therewith

In the vicinity of a rim portion of a spin base, a plurality of supportswhich abut on a bottom rim portion of a substrate W and support the substrate W are formed projecting toward above from the spin base. The substrate W is supported horizontally by the plurality of supports, with a predetermined distance ensured from the spin basewhich opposes the bottom surface of the substrate W. Into the space which is created between the top surface of the substrate W and an opposing surfaceof an atmosphere blocker plate, inert gas is ejected from a plurality of gas ejection outletswhich are formed in the opposing surface. The inert gas thus supplied to the top surface of the substrate W presses the substrate W against the supportsand the substrate W is held at the spin base

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Kyoto, Japan

Koji Ando