Tokyo Electron Limited

Eagle Industry Co., Ltd.

Hitachi, Ltd.

Oki Electric Industry Co., Ltd.

Renesas Technology Corp.

National Institute of Advanced Industrial Science and Technology

Elpida Memory, Inc.

Koji Akiyama

Shingo Hishiya

Hirokazu Higashijima

Mitsuaki Iwashita

Wenwu Wang

Hirokazu Ueda

Yu Wamura

Shintaro Aoyama

Hajime Nakabayashi

Morifumi Ohno

Koji Yamashita

Toshiyuki Hirota

Hideaki Fukuda

Tadahiro Ishizaka

Yumiko Kawano

Hiroki Murakami

Takashi Yanagisawa

Atsushi Kaneko

Kenji Sekiguchi

Ryuichi Asako

Takuya Sugawara

Yutaka Fujino

Shoji Kato

Yuichiro Morozumi

Shuji Azumo

Masaru Kadoshima

Yusaku Kashiwagi

Yoshikazu Furusawa

Katsushige Harada

Takashi Hayakawa

Hiroyuki Nagai

Michitaka Aita

Takakazu Kiyomura

Tetsuya Shibata

Yoji Iizuka

Kimiya Aoki

Susumu Tsuruta

Kazuyoshi Yamazaki

Yoshitsugu Tanaka

Yasushi Akasaka

Takeo Nakano

Naoki Umeshita

Junya Miyahara

Tetsushi Ozaki

Masanobu Ito

Dipak Aryal

Yuki Sakuma

Mami Uchiyama

Chihiro Tamura

Kentaro Shiraga

Yoji Oshii

Antonio Rotondaro

Joji Watanabe

Wataru Mizubayashi

Zhang Lulu

Philippe Gaubert

Hiroshi Shimmura

A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Vacuum processing apparatus and oxidizing gas removal method

A manufacturing method for a semiconductor device includes forming a dielectric film on a semiconductor substrate or on a lower electrode that is formed on a semiconductor substrate, attaching a metal to a predetermined area on a surface of the dielectric film selectively, forming a metal oxide film with an insulation property in the predetermined area on the surface of the dielectric film by applying heat treatment to the metal, and forming an upper electrode on the dielectric film in a state where the metal oxide film is formed in the predetermined area on the surface of the dielectric film.

Manufacturing method for semiconductor device

An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

Electrocaloric effect element, heat transfer device, semiconductor manufacturing device, and electrocaloric effect element control method

There is provided a semiconductor device including: a first wiring; a second wiring; a dielectric layer configured to insulate the first wiring and the second wiring from each other; and an impedance adjustment layer formed between the first wiring and the second wiring, and configured to adjust an impedance between the first wiring and the second wiring.

Semiconductor device

A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO, Pt, Pd, CuO, and CuO, using an Ru(EtCp)gas and an Ogas; and selectively forming a first SiO-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiOfilm only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Selective film forming method and method of manufacturing semiconductor device

In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.

Method of controlling threshold of transistor and method of manufacturing semiconductor device

A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Semiconductor device manufacturing method and substrate treatment system

A storage apparatus which contains a plurality of microprocessors includes a virtual queue which stores a virtual command which is used in the storage apparatus; a real queue which stores a real command based on an actual communication protocol; a first pointer which is updated when the virtual command is stored in the virtual queue; a second pointer which is updated when the first pointer is updated; a checking unit which detects an update to the first pointer and updates the second pointer; and a controller. Upon detecting that the second pointer has been updated by the checking unit, the controller references the second pointer and the first pointer, and, after reading the virtual command stored in the virtual queue and converting the virtual command to the real command, stores the real command in the real queue.

Storage apparatus and command control method

It is provided a storage system for inputting and outputting data in accordance with a request from a host computer, comprising: at least one processor for processing data requested to be input or output; a plurality of transfer controllers for transferring data between memories in the storage system; and at least one transfer sequencer for requesting a data transfer to the plurality of transfer controllers in accordance with an instruction from the processor. The processor transmits a series of data transfer requests to the at least one transfer sequencer. The at least one transfer sequencer requests a data transfer to each of the plurality of transfer controllers based on the series of data transfer requests. The each transfer controller transfers data between the memories in accordance with an instruction from the at least one transfer sequencer.

Storage system and data transfer control method

Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiOfilm having an interface control function on the lower electrode layer; forming a ZrO-based film on the first TiOfilm; performing an annealing process for crystallizing ZrOin the ZrO-based film, after forming the ZrO-based film; forming a second TiOfilm which serves as a capacity film on the ZrO-based film; and forming an upper electrode layer on the second TiOfilm.

Method of manufacturing capacitor, capacitor and method of forming dielectric film for use in capacitor

A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.

Fabrication method of semiconductor device

A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.

Film forming method, film forming apparatus, and storage medium

A mechanical seal device for obtaining appropriate sliding properties under any conditions, such as a pressure of seal is low or high. Both first groovesand second groovesare formed on a sliding faceof a stationary ring. The first grooves which are not in communication externally and act for reducing contact resistance of a sliding face by a dynamic pressure action when a rotary shaft rotates, the second grooves act for reducing the contact resistance of the sliding face constantly by introducing a pressure from external. Thus, a mechanical seal device which is available to seal sealed fluid under an appropriate dry contact status wherein a sliding face load is reduced in any condition can be provided.

Tandem seal device

A shaft sealing device in which a load acting on a sliding section of the device is reduced to extend the life of the device and which permits no leakage of fluid in a machine to an atmospheric air. The shaft sealing device has seals arranged in three stages in the axial direction between a seal case and a rotating shaft passed through the inner periphery of the seal case. A first-stage seal on the machine's inner side and a third-stage seal on the machine's outer side have contact type mechanical seal structures in which a rotational sealing element and a stationary sealing element are in close sliding contact with each other. The intermediate second-stage seal has a contactless mechanical seal structure in which a rotational sealing element and a stationary sealing element are kept by dynamic pressure so as not to be in contact with each other. A high-pressure sealing liquid is supplied by the pressure of fluid in the machine to an annular space surrounded by that portion of the seal case which extends from the first-stage seal to the second-stage seal.

Shaft sealing device

The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Nirasaki, Japan

Koji Akiyama