Fujitsu Corporation

Tokyo Institute of Technology

Semiconductor Technology Academic Research Center

Koji Aizawa

Kazuhiro Takahashi

Yoshihiro Arimoto

Tetsuro Tamura

Hiroshi Ishihara

Masaomi Yamaguchi

Hiroshi Ishiwara

Hiromasa Hoko

Yasuo Nara

Satoshi Hasegawa

Yoshiaki Tabuchi

A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Ferroelectric memory, multivalent data recording method and multivalent data reading method

A nonvolatile semiconductor memory, including a ferroelectric capacitor connected to the gate of a MOSFET, comprises a silicon thin film formed in stripes on an insulated substrate and having an n -region, a p-region and an n -region layered in its thickness direction, a hole formed in a portion of the silicon thin film and extending to the lower n -region, a gate electrode provided on the side walls of the hole with a gate insulting film interposed therebetween, and a ferroelectric capacitor formed on the silicon thin film and having its lower electrode connected to the gate electrode.

Nonvolatile ferroelectric memory and its manufacturing method

Growing community of inventors

Tokyo, Japan

Koji Aizawa