Asahi Kasei Microdevices Corporation

Asahi Kasei Emd Corporation

Koichiro Ueno

Naohiro Kuze

Takaaki Furuya

Kazuhiro Nagase

Yoshitaka Moriyasu

Provided is a learning processor including a base characteristic acquiring section that acquires base characteristic data indicating a characteristic of a base layer serving as a base on which a film is to be deposited by a film deposition apparatus; a film characteristic acquiring section that acquires film characteristic data indicating a characteristic of the film deposited on the base layer by the film deposition apparatus; and a first learning processing section that performs learning processing of a first model that outputs predicted film characteristic data obtained by predicting a characteristic of a film to be deposited by the film deposition apparatus based on targeted base characteristic data indicating a characteristic of a base layer serving as a target for formation of the film, using learning data that includes the base characteristic data and the film characteristic data.

Learning processor, learning processing method, production method of compound semiconductor, and recording medium

Provided is an infrared light emitting device in which dark current and diffusion current caused by thermally excited holes are suppressed. Thermally excited carriers (holes) generated in a first n-type compound semiconductor layer () tend to diffuse in the direction of a &#x3c0; layer (). But, the dark current by holes is reduced by providing an n-type wide band gap layer () with a larger band gap than the first layer () and the &#x3c0; layer () that suppresses the hole diffusion between the first layer () and the &#x3c0; layer (). The wide band gap layer () has a band gap shifted relatively to valence band direction by n-type doping and thereby more effectively functions as a diffusion barrier for the thermally excited holes. Namely, the band gap and n-type doping of the wide band gap layer () are adjusted to suppress diffusion of the thermally excited carriers.

Infrared light emitting device

An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (), and then, the compound semiconductor sensor () and an integrated circuit (), which processes an electrical signal output by the compound semiconductor sensor () and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Growing community of inventors

Tokyo, Japan

Koichiro Ueno