Tokyo Electric Co.

Koichiro Sakamoto

Minoru Ogawa

Toshiyuki Tamura

Kazushige Katsuumi

Tohru Kitagawa

Shozo Takeno

Satoshi Suzuki

Hisashi Nishikawa

Yasuhiro Ushijima

Ikuo Fujisawa

Masanobu Hirata

Disclosed herein is a method for manufacturing edge emission type EL device arrays. A substrate carrying individually formed EL device arrays is coated with a transparent film. The film is etched to form terminals through exposure of the edges of block terminals and to make contact holes reaching an upper electrode layer of the EL devices. The contact holes are then covered with a conductive layer that is etched to form common electrodes conductive to predetermined edge emission type EL devices within each block.

Method for manufacturing edge emission type electroluminescent device

A method for manufacturing edge emission type EL device arrays is disclosed. The method initially involves depositing a first and a second lower electrode layer of different properties. The second lower electrode layer is patterned into a common electrode arrangement conductive to a plurality of edge emission type EL devices. On top of the first and second lower electrode layers, an EL device layer and an upper electrode layer are deposited. The first lower electrode layer is patterned together with the EL device layer and upper electrode layer into a plurality of edge emission type EL devices. The parts ranging from the top edge of the light-emitting edges for the EL devices to the inside of the substrate are etched. This provides a highly smooth light-emitting edge for each EL device.

The present invention, in a photoelectric conversion device including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, is manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.

Method of making a photoelectric conversion device

An image sensor including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.

Photoelectric conversion device

A photoelectric conversion device is disclosed which comprises a large number of photoelectric conversion elements arranged in an array on a substrate and thin film transistors individually corresponding to the photoelectric conversion elements and arranged in an array in parallel with the direction of the array of the photoelectric conversion elements, in which two electrodes of each of the thin film transistors are arranged to oppose each other in the direction of the array of the photoelectric conversion elements so that the width of the channel formed between both the electrodes may be prolonged, and thereby, switching operation by the thin film transistor is made reliable and the manufacture of the thin film transistor portion is facilitated.

Photoelectric conversion element image sensor with combined field effect

A load cell has strain gage resistors, lead portions for connecting them in a bridge and compensating portions for the compensation of the bridge balance, span or the like, which are laminated as metal thin films by means of the thin film technique. A protection film is formed over the metal thin films and trimmed by laser beams, and the protection film is made of a pigmented protection film made of synthetic resin for easy and accurate trimming.

Load cell and method of compensating the same

A load cell has four strain gauge resistors formed through an insulation layer on the beam body having a strain generating section, a conductive pattern for forming a bridge circuit by coupling the strain gauge resistors compensation resistance sections for compensating the bridge balance and span of the bridge circuit is provided. A section of the conductive pattern except the section coupled to the strain gauge resistors is disposed at a position sufficiently isolated from the strain gauge resistors.

Load cell

A strain sensor includes an insulating resin, e.g. polyimide resin, film formed on a beam body having a strain generating section and a wiring layer having a resistance material, e.g. nickel-chrome, layer formed on the polyimide resin film and a gold layer selectively formed on the nickel-chrome layer. A solid powder, e.g. silicon dioxide, is mixed with the polyimide resin film.

Strain gauge with reduced creep phenomenon by improved insulation

A load cell includes a bridge circuit having first to fourth strain gauge resistors and first and second temperature compensating resistors connected to the respective first and second strain gauge resistors. The first to fourth strain gauge resistors comprise a Nichrome layer formed on an insulating film, the first and second temperature compensating resistors each comprise a two-layered structure of the Nichrome layer and a titanium layer formed thereon, and connecting means for connecting the first to fourth strain gauge resistors and first and second temperature compensating resistors comprise a three-layered structure of the Nichrome layer and titanium layer and also a gold layer formed on the titanium layer.

Growing community of inventors

Shizuoka, Japan

Koichiro Sakamoto