Sony Corporation

Mitsubishi Gas Chemical Company, Inc.

Sony Semiconductor Solutions Corporation

Koichiro Saga

Tomoyuki Azuma

Kenji Yamada

Nobutoshi Fujii

Shinichi Miyake

Yuji Murata

Takuya Ito

Koichi Sejima

Hiroya Watanabe

Sakuo Koyata

Takeshi Hattori

An apparatus and method enabling a reduction in a resistance of a conductive path electrically connecting an upper substrate and a lower substrate. The apparatus includes a first semiconductor layer with element formation regions disposed adjacent to one another via element isolation regions, each of the element formation regions having a first active element, contact regions on an element isolation region side of a front layer portion of the element formation regions, conductive pads connected to the contact regions and extending across the element isolation region, a first insulating layer, a second semiconductor layer on the first insulating layer and having a second active element, a second insulating layer covering the second semiconductor layer, and conductive plugs extending from the second insulating layer to the conductive pad, the conductive plugs including a material identical to a material of the conductive pad and formed integrally with the conductive pad.

Semiconductor apparatus and method for manufacturing the same

To further improve reliability as an element for the memory element. Provided is a memory element including: a plurality of magnetoresistive elements having an MTJ structure that are arrayed on a substrate. There is a region in which magnetism is neutralized in a region of a magnetic material layer that functions as a storage layer in the magnetoresistive element other than a region that functions as the magnetoresistive element, and the region in which magnetism is neutralized includes an alloy containing a first element constituting the magnetic material layer and a second element having an fcc structure when forming an alloy with the first element.

Memory element and manufacturing method of memory element

A method of cleaning for removing metal compounds attached to a surface of a substrate, wherein the cleaning is conducted by supplying a supercritical fluid of carbon dioxide comprising at least one of triallylamine and tris(3-aminopropyl)amine to the surface of the substrate and a process for producing a semiconductor device using the method of cleaning are provided. In accordance with the method of cleaning and the method for producing a semiconductor device using the method, etching residues or polishing residues containing metal compounds are efficiently removed selectively from the electroconductive material forming the electroconductive layer. When the electroconductive layer is a wiring, an increase in resistance due to residual metal compounds can be suppressed, and an increase in the leak current due to diffusion of the metal from the metal compounds to the insulating film can be prevented. Therefore, reliability on the wiring is improved, and the yield of the semiconductor device can be increased.

Method of cleaning and process for producing semiconductor device

A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Process for producing structural body and etchant for silicon oxide film

To provide a substrate transfer apparatus capable of forming a hermetically-closed space integrated between a normal substrate processing apparatus which is not integrated with a substrate transfer unit and a substrate transfer container, the substrate transfer apparatus includes a main body in a box-like shape containing a substrate W, an upper opening (first opening) provided at the main body and connected to a bottom opening (substrate transfer port) of a container while maintaining an air tight state against outside air, a side wall opening (second opening) provided at the main body and connected to a substrate transfer port of the transfer processing apparatus while maintaining the air tight state against outside air, an exhaust pipe connected to the main body, an opening/closing mechanism for opening and closing a bottom lid relative to the bottom opening in a state in which the upper opening and the bottom opening of the container are connected and transfer mechanisms installed in the main body for transferring the substrate W.

Substrate transfer apparatus and substrate method

A hermetic substrate transportation container permitting storage of an electronic substrate is provided, keeping a rise of internal moisture concentration low, thus preventing generation of natural oxidation film on the surface of the electronic substrate and allowing detection of the contents inside the substrate transportation container, from outside. A container body having an aperture for loading and unloading an electronic substrate, the substrate transportation container comprising a lid for sealing such aperture, in which the container body and the lid are made of a material having an amorphous polyolefin as its main constituent. By constituting the container body and the lid using the amorphous polyolefin with low hygroscopic characteristic as a main constituent, it is possible to keep discharge of moisture from the internal wall thereof low and also to prevent an increase of moisture concentration in the sealed compartment.

Substrate transportation container

Sealed container, storage apparatus, electronic part conveyance system, and method of storage and conveyance of electronic parts

First and second wall portions respectively spread along first and second opposing inner surfaces of a housing portion, and a plurality of vent pores that are distributed along the first and second inner surfaces are formed in the first and second wall portions. Hence, when an ambient gas is supplied to a space between the first inner surface and the first wall portion and another ambient gas is simultaneously discharged from a space between the second inner surface and the second wall surface, a laminar flow of an ambient gas directed from the first inner surface toward the second inner surface is formed to be parallel to a plate-like body held by a base portion.

Sealed container and sealed container ambient gas substitution apparatus

A method of cleaning the surface of a substrate, wherein the first step of the process of cleaning the substrate including a step of cleaning the surface of the substrate by an acidic solution, oxidizing solution, or alkaline solution, comprises a step of removing the natural oxide film formed on the surface of the substrate.

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Kanagawa, Japan

Koichiro Saga