Nec Corporation

Koichiro Okamoto

Munehiro Tada

Toshitsugu Sakamoto

Hiromitsu Hada

Naoki Banno

In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element according to the present invention is equipped with a first variable resistance element equipped with a first input/output terminal and a first connection terminal, a second variable resistance element equipped with a second input/output terminal and a second connection terminal, and a rectifying element equipped with a control terminal and a third connection terminal, wherein the first connection terminal, the second connection terminal and the third connection terminal are connected to one another.

Switching element having overlapped wiring connections and method for fabricating semiconductor switching device

In order to improve the number rewrites by improving the dielectric breakdown resistance of an ion conducting layer in a variable resistance element, this variable resistance element is provided with: a first electrode that contains at least copper; a second electrode that contains at least Ru, nitrogen and a first metal; and an ion conducting layer that is positioned between the first electrode and the second electrode.

Variable resistance element and method for producing variable resistance element

The present invention addresses the problem of inhibiting the evolution of a poisoning gas to eliminate wiring-pattern resolution failures and thereby forming a desired wiring layer structure to provide functional elements having an improved property yield. This method for forming multi-layered copper interconnect on a semiconductor substrate comprises: forming a multilayer resist structure to form a given resist pattern on a substrate including an interlayer dielectric film that has via holes which have been formed in part thereof and filled with an SOC layer, the multilayer resist structure comprising an SOC layer, an SOG layer, an SiOlayer, and a chemical amplification type resist superposed in this order from the substrate side; conducting etching using the resist pattern as a mask to form a pattern for a wiring layer and via plugs; and forming the wiring layer and the via plugs in the pattern.

Method for forming wiring

A resistance changing element according to the present invention comprises a first electrode () and a second electrode (); and an ion conducting layer () that is formed between the first electrode () and the second electrode () and that contains at least oxygen and carbon.

Method for forming resistance changing element capable of operating at low voltage

Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element

A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.

Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device

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Tokyo, Japan

Koichiro Okamoto