Mitsubishi Electric Corporation

Koichiro Nishizawa

Takayuki Hisaka

Shinsuke Watanabe

Kazuhiro Maeda

Toshihiko Shiga

Yoshitsugu Yamamoto

Katsumi Miyawaki

Takahiro Nakamoto

Daisuke Tsunami

Akira Kiyoi

Koichiro Hori

A device () is provided on an upper surface of the device substrate (). A sealing frame () made of a non-electrolytic plating reactive catalyst metal is provided on the upper surface of the device substrate () and surrounds the device (). An upper surface of the device substrate () and a lower surface of the cap substrate () are joined in a hollow state through the sealing frame (). A plurality of electrodes () are connected to the device () and extended out of the device substrate () and the cap substrate (). A metal film () is provided on an outer surface of the sealing frame () and not provided on the device substrate () and the cap substrate ().

Semiconductor device and method for manufacturing the same

A device () is formed on a main surface of a substrate (). The main surface of the substrate () is bonded to the undersurface of the counter substrate () via the bonding member () in a hollow state. A circuit () and a bump structure () are formed on the top surface of the counter substrate (). The bump structure () is positioned in a region corresponding to at least the bonding member (), and has a higher height than that of the circuit ().

Substrate bonding structure and substrate bonding method

A ring-like sealing frame () and a bump () are simultaneously formed on a main surface of a first substrate () by patterning a metal paste. A ring-like protrusion () having a smaller width than a width of the sealing frame () is formed on a main surface of a second substrate (). The main surface of the first substrate () and the main surface of the second substrate () are aligned to face each other. The sealing frame () is bonded to the protrusion (), and the bump () is electrically bonded to the second substrate (). A height of the protrusion () is 0.4 to 0.7 times a distance between the first substrate () and the second substrate () after bonding.

Hollow sealed device and manufacturing method therefor

A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.

Semiconductor device

According to present invention, a semiconductor device includes a semiconductor substrate formed of GaAs, an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate, a barrier layer formed of Co or an alloy containing Co on the adhesion layer, and a metal layer formed of Cu, Ag or Au on the barrier layer.

Semiconductor device having a Pd-containing adhesion layer

Airtightness of a hollow portion is maintained, and yield and durability are improved. A semiconductor deviceincludes a device substrate, a semiconductor circuit, a sealing frame, a cap substrate, via portions, electrodesand, and a bump portionor the like. A hollow portionin which the semiconductor circuitis housed in an airtight state is provided between the device substrateand the cap substrate. The bump portionconnects all the via portionsand the cap substrate. Thus, the via portionscan be reinforced using the bump portionA.

A semiconductor device includes: a semiconductor substrate through which a via hole is formed from a back surface to a front surface of the semiconductor substrate; an electrode provided on the front surface of the semiconductor substrate and closing the via hole; and a metal film provided on the back surface of the semiconductor substrate, a side wall of the via hole and a lower surface of the electrode, wherein an opening is provided in the metal film on the back surface of the semiconductor substrate, and the opening abuts on only part of a circumference of the via hole.

A semiconductor device manufacturing method of present application includes a catalytic step of depositing catalytic metal on a surface of a semiconductor substrate, an oxide removing step of removing oxide formed on the surface of the semiconductor substrate in the catalytic step, an additional catalytic step of depositing catalytic metal on the surface of the semiconductor substrate exposed in the oxide removing step, and a plating step of forming a metal film on the surface of the semiconductor substrate by means of an electroless plating method after the additional catalytic step.

Semiconductor device manufacturing method and semiconductor device

According to the present invention, a semiconductor device includes a transistor provided in a first substrate, a gate pad of the transistor, a conductive bump provided on the gate pad, a second substrate provided above the first substrate, a first electrode passing through from a first face to a second face of the second substrate and connected with the conductive bump on the second face side, a resistor connected to the first face side of the first electrode with its one end and connected to an input terminal with the other end and a second electrode provided adjacent to the first electrode on the first face and connected to the input terminal without interposing the resistor, wherein a gate leakage current of the transistor flows from the first electrode to the input terminal through a base material of the second substrate and the second electrode.

A method for manufacturing a semiconductor device includes: forming a semiconductor element having an electrode on a main surface of a semiconductor substrate; forming a first resin film that encloses a side of the electrode while keeping a distance from the electrode of the semiconductor element on the main surface of the semiconductor substrate; and forming a hollow structure around the electrode of the semiconductor element by bonding a second resin film that covers over the electrode while keeping a distance from the electrode of the semiconductor element to a top surface of the first resin film.

Method for manufacturing a semiconductor device including a hollow structure around an electrode of a semiconductor element

A method of manufacturing a semiconductor device includes the steps of immersing a substrate in a solution containing metal ions to adhere a metal catalyst to a surface of the substrate, immersing the substrate with the metal catalyst adhered thereto in an electroless plating solution to electrolessly plate a layer on the substrate, immersing the substrate in an electroplating solution to electroplate a layer on the electrolessly plated layer using the electrolessly plated layer as a power feeding layer, and forming a metal layer of Cu or Ag on the electroplated layer. The electroplated layer is formed of a different material than the metal layer.

Method of manufacturing semiconductor device

A semiconductor device includes: a semiconductor substrate; an underlying wiring on the semiconductor substrate; a resin film extending to the semiconductor substrate and the underlying wiring, and having a first opening on the underlying wiring; a first SiN film on the underlying wiring and the resin film, and having a second opening in the first opening; an upper layer wiring on the underlying wiring and part of the resin film; and a second SiN film on the upper layer wiring and the resin film, and joined to the first SiN film on the resin film. The upper layer wiring includes a Ti film, connected to the underlying wiring via the first and second openings, and an Au film on the Ti film. The first and second SiN films circumferentially protect the Ti film.

A single-crystal substrate is placed on a supporting table while maintaining crystalline orientation of the single-crystal substrate. The single-crystal substrate has contacting regions on a periphery of an upper surface of the single-crystal substrate. Linear contacting surfaces of contacting pins are placed in contact with the contacting regions of the single-crystal substrate placed on the supporting table. Longitudinal directions on the contacting surfaces of all the contacting pins are not parallel to intersecting lines of the upper surface of the single-crystal substrate and cleaved surfaces of the single-crystal substrate.

Method for manufacturing semiconductor device and semiconductor manufacturing system

A semiconductor device comprises a GaAs substrate having a first major surface and a second major surface opposite to each other; a first metal layer composed of at least one of Pd, Ta, and Mo on the first major surface of the GaAs substrate; and a second metal layer composed of a Ni alloy or Ni on the first metal layer.

Growing community of inventors

Tokyo, Japan

Koichiro Nishizawa