Kyocera Corporation

Koichiro Niira

Norikazu Ito

Hideki Hakuma

Hirofumi Senta

Shinichiro Inaba

Tomonari Sakamoto

Mitsuo Yamashita

Yosuke Inomata

Norihiko Matsushima

Hiroshi Morita

Shiro Miyazaki

Koji Nishi

Kouji Miyamoto

Tatsuya Yashiki

Tomofumi Honjo

Shigeo Aono

Yuko Fukawa

Katsuhiko Shirasawa

Shigeru Gotoh

Shuichi Fujii

Manabu Komoda

Kenji Fukui

Kenichi Kurobe

Hiroshi Matsui

Hiroki Okui

Masahiro Tanaka

Shinsuke Uchida

Shinji Yada

Takuya Kurose

Kyosuke Fujiwara

Yuji Ino

Hidetaka Takato

An apparatus for predicting useful life of a photovoltaic module includes an input and an output. The input receives first information indicating an amount of hygrothermal stress that a photovoltaic module undergoes from a start until an end of a period during which the photovoltaic module outputs predetermined electric power. The input further receives second information indicating an amount of hygrothermal stress that the photovoltaic module undergoes per a predetermined time in a field where the photovoltaic module is deployed. The second information is generated based on information about daily maximum temperatures of the photovoltaic module in the field where the photovoltaic module is deployed. The output outputs result information about a predicted period during which the photovoltaic module is expected to output the predetermined electric power when the photovoltaic module is deployed in the field.

Information processing apparatus, control method, and program

This solar cell element, which is increased in the conversion efficiency due to improved effect of passivation, includes a semiconductor substrate in which a p-type first semiconductor region and an n-type second semiconductor region are stacked such that the first semiconductor region is located nearmost a first principal surface side and the second semiconductor region is located nearmost a second principal surface side; and a first passivation film containing aluminum oxide and arranged on the first principal surface side of the first semiconductor region. In the inside of the first passivation film of the solar cell element, the first ratio obtained by dividing the aluminum atomic density by the oxygen atomic density is 0.613 or more and less than 0.667 and the second ratio obtained by dividing the sum of the aluminum atomic density and the hydrogen atomic density by the oxygen atomic density is 0.667 or more and less than 0.786.

Solar cell element

First and second electrodes are apart from each other in a chamber. Plates are disposed on a substrate in the second electrode. Each of the plates comprises first and second parts for supplying first and second gas to a space between the first and second electrodes, respectively, a first supply path for first gas connected to the first part, and a second supply path for second gas connected to the second part. The substrate comprises a heater for the first gas, a first introducing path for introducing the first gas to the first supply path, and a second introducing path for introducing the second gas to the second supply path. The second supply path comprises a mainstream part without the second part and branch parts with the second part. A connecting portion of the second introducing path and the mainstream part is positioned in an adjacent portion of the plates.

Apparatus for forming deposited film

Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.

Method for manufacturing a thin-film solar cell using a plasma between parallel electrodes

A surface electrode () is installed on the light receiving surface of a solar cell element, the surface electrode () comprises three bus bar electrodes () for extracting light-produced at the solar cell element to the outside and collecting finger electrodes () connected to these bus bar electrodes (), and the bus bar electrodes () are not less than 0.5 mm and not more than 2 mm in width and the finger electrodes () are not less than 0.05 mm and not more than 0.1 mm in width. A high-efficient solar cell module can be obtained with substantially lowered resistance by increasing the number of bus bar electrode () and thereby decreasing the lengths of the finger electrodes ().

Solar cell module and photovoltaic power generator using the same

A photoelectric conversion module according to an embodiment of the present invention includes a plurality of units formed on a substrate and disposed parallel to each other, each including a plurality of photoelectric conversion cells formed in one direction, the plurality of units disposed in an orthogonal direction to the one direction, and a first separation region disposed between adjacent units of the units. In the solar cell module, each of the photoelectric conversion cells includes a second separation region, and the second separation region in one of the units is extended beyond the first separation region formed between one of the units and the other unit which is adjacent to the one of units toward a part of the other unit.

Photoelectric conversion module and method of manufacturing the same

In order to form a high quality film without causing in-plane nonuniformity in film quality, an apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; a second electrode that is located in the chamber with a predetermined spacing from the first electrode and includes a plurality of supply parts configured to supply material gases; an introduction path connected to the supply parts, through which the material gases are introduced; a heater located in the introduction path; and a cooling mechanism configured to cool the second electrode.

Apparatus for forming deposited film and method for forming deposited film

A solar cell element and method of manufacturing same is disclosed. A reverse-conductive-type layer is formed on at least one part of a first surface side of a one-conductive-type semiconductor substrate. A conductive layer is formed on the reverse-conductive-type layer. A contact region for electrically connecting the conductive layer and the one-conductive-type semiconductor substrate is formed by heating and melting at least one part of the conductive layer. The solar cell element can be manufactured without conducting complicated treatments, such as removal by etching and re-growing of a silicon thin layer.

Solar cell element manufacturing method and solar cell element

A photovoltaic conversion element includes a one conductivity-type crystalline Si semiconductor; an opposite conductivity-type semiconductor which is joined to the crystalline Si semiconductor to form a pn junction therebetween; an electrode provided on the opposite conductivity-type semiconductor; and a depletion region formed from the side of the one conductivity-type crystalline Si semiconductor to the side of the opposite conductivity-type semiconductor across the pn junction formed therebetween. The depletion region has a first depletion region located inside the crystalline Si semiconductor and under the electrode, and the first depletion region has an oxygen concentration of 1E18 [atoms/cm] or less.

Photovoltaic conversion element and manufacturing method therefor, and photovoltaic conversion module using same

In a photoelectric conversion device, in a contact between a p-type semiconductorand an electrode, an n-type semiconductorof a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductorand the electrode. The existence of the n-type semiconductorallows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductorand the n-type semiconductorin a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.

Multi-junction type solar cell device

Solar cell device

There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substratedoped with boron, which comprises a bulk substrate region, regions other than the bulk substrate region including an n-type regionjoining to a light receiving surface of the bulk surface region, a BSF regionjoining to a back surface of the bulk surface region,

Photovoltaic conversion device and method of manufacturing the device

A non-Si non-C-based gas is heated by a thermal catalysis body provided in a gas introduction channel, and the heated non-Si non-C-based gas and a material-based gas comprising Si and/or C are separately introduced into a film deposition space through a showerhead having a plurality of gas effusion ports, and in the film deposition space, a plasma space is formed by a nonplanar electrode connected to a radio frequency power supply, thereby forming a film on a substrate. Formation of high-quality Si-based films and C-based films can thus be accomplished at high deposition rate over large area with uniform film thickness and homogeneous quality. Also, highly efficient devices including photoelectric conversion devices represented by solar cells can be manufactured at low-cost by the use of such films.

Growing community of inventors

Higashiomi, Japan

Koichiro Niira