Canon Kabushiki Kaisha

Koichiro Nakanishi

Mitsutoshi Hasegawa

Nobuhiro Ito

Toshimitsu Kawase

Kinya Kamiguchi

Tomonori Nakazawa

Kazuo Koyanagi

Kazuyuki Ueda

Norio Kaneko

Takehiko Kawasaki

Hidetoshi Nojiri

Osamu Takamatsu

Shinya Koyama

Masahiro Tagawa

Masatake Akaike

Naoyo Gemma

Toshitsugu Morimoto

Yasuhiro Shimada

Takashi Ushijima

Hiroyuki Tokunaga

Yasutomo Furuta

Hirotaka Seki

Yasuhiro Nagatomo

Takahiro Numai

Rei Kurashima

Hayato Koyama

Yusuke Kamata

Kyota Nozu

A second electrode is laminated on a light emitting layer on an opposite side across the light emitting layer from a first electrode laminated on a silicon substrate. The second electrode is capable of transmitting light. A photoconductor drum is exposed to light by using light transmitted through the second electrode.

Image forming apparatus with top emission light emitting device

The plurality of surface light emitting element array chips in the first row and the plurality of surface light emitting element array chips in the second row are arranged in a staggered manner along the main scanning direction, and a space between the plurality of surface light emitting element array chips in the first row and the plurality of surface light emitting element array chips in the second row is set so as not to be an integral multiple of an image resolution pitch in the sub-scanning direction.

Exposure head and image forming apparatus

An exposure apparatus comprises an exposure head, a memory and at least one processor. The exposure head includes light-emitting elements, and a rod lens array. A photosensitive body is rotationally driven. The light-emitting elements are arranged in a direction intersecting a direction of rotation of the photosensitive body. The rod lens array forms an image of light on the photosensitive body. The light is outputted from any of the light-emitting elements based on image data, passes through the rod lens array and reaches the photosensitive body. The memory stores correction data for correcting a streak image. The at least one processor corrects the image data based on the correction data read out from the memory.

Image forming apparatus and exposure apparatus for forming image using rod lens array

An image forming apparatus includes: an exposure head including a first light emitting chip, a second light emitting chip, a first lens fixed to a housing at a position facing the first light emitting chip, and configured to form an image of light emitted from a plurality of light emitting portions included in the first light emitting chip on a photoreceptor, and a second lens provided separately from the first lens, fixed to the housing at a position facing the second light emitting chip, and configured to form an image of light emitted from a plurality of light emitting portions included in the second light emitting chip on the photoreceptor; and a controller capable of controlling application of a voltage to each of a plurality of electrodes of the first light emitting chip and a plurality of electrodes of the second light emitting chip so as to form one pixel.

Image forming apparatus

Provided is a semiconductor light emitting device including nodes each connected to a gate of a shift thyristor and a gate of a light emitting thyristor and transfer diodes arranged to connect the nodes to each other. The shift thyristor has a laminated structure including semiconductor layers, and is provided to a mesa formed separately from the light emitting thyristors and the transfer diodes. The shift thyristor includes a first metal layer continuously provided to straddle the mesa, and a second metal layer, which is arranged in an upper layer than the first metal layer, and includes a first part and a second part arranged to be opposed to the first part across the mesa. The first part and the second part of the second metal layer are each electrically connected to the first metal layer in a region that does not overlap the mesa in a plan view.

Semiconductor light emitting device having a shift thyrister with a laminated structure, exposure head, and image forming apparatus

A semiconductor light-emitting device includes a semiconductor stacked structure including a light-emitting layer, a metal electrode provided over the semiconductor stacked structure and having an opening for externally emitting a light emitted from the light-emitting layer, and a transparent electrode provided over the semiconductor stacked structure inside the opening and over the metal electrode.

Semiconductor light-emitting device, exposure head, and image forming apparatus

Provided is a semiconductor light-emitting device including a plurality of nodes and a plurality of transfer diodes connecting the nodes, and gates of a shift thyristor and a light-emitting thyristor are connected to each of the nodes. Each of the transfer diodes includes a stacked structure including a first semiconductor layer of a first conductivity type provided over a semiconductor substrate, a second semiconductor layer of a second conductivity type, which is different from the first conductivity type, provided over the first semiconductor layer, a third semiconductor layer of the first conductivity type provided over the second semiconductor layer, a fourth semiconductor layer of the second conductivity type provided over the third semiconductor layer, and a fifth semiconductor layer of the first conductivity type provided over the fourth semiconductor layer, and a diode is formed by a p-n junction between the fourth and fifth semiconductor layers.

In a light emitting element array in which a plurality of components having multiple light emitting thyristors connected to a single shift thyristor are arranged in a plurality of lines, the density of the light emitting thyristor is increased without reduction in the amount of light emission of each of the light emitting thyristors. In the light emitting element array in which multiple light emitting thyristors are formed on a single island structure and the multiple light emitting thyristors are connected to a single shift thyristor, a first element-isolating groove that element-isolates the multiple light emitting thyristors from each other inside the single island structure is formed shallower than a second element-isolating groove that element-isolates the island structure.

Light emitting element array having a plurality of light emitting thyristors in island structures, exposing head using the same, and image forming apparatus using the same

A light-emitting element includes, on a substrate, a shift thyristor and a light-emitting thyristor. The shift thyristor and the light-emitting thyristor each include a semiconductor multilayer structure consisting of first to fourth semiconductor layers stacked with alternating conductivity types. The shift thyristor includes a current diffusion layer in contact with the semiconductor multilayer structure, and a first metal electrode in this order, or the first metal electrode which is in contact with the semiconductor multilayer structure on the semiconductor multilayer structure; and wherein in the shift thyristor, a region in which a region in which the current diffusion layer or the first metal electrode and the semiconductor multilayer structure come into contact with each other is projected in a stacked direction of the semiconductor multilayer structure is included in a region in which the first metal electrode is projected in the stacked direction.

Light-emitting element, light-emitting element array, exposure head, and image formation apparatus

A surface emitting laser having a wide wavelength tunable band is provided. A surface emitting laser includes a first reflecting mirror (); a second reflecting mirror (); and an active layer () arranged between the first reflecting mirror () and the second reflecting mirror (), a gap being formed between the second reflecting mirror () and the active layer (), an oscillation wavelength being tunable. The second reflecting mirror () includes a beam () comprising a single-crystal semiconductor, and a dielectric multilayer film () supported by the beam (), and the dielectric multilayer film () is arranged in an opening () formed in the beam ().

Surface emitting laser, information acquiring apparatus, imaging apparatus, laser array, and method of manufacturing surface emitting laser

A surface emission laser includes a first beam, a second reflector disposed in an opening portion formed in the first beam, and a second beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam, wherein a length, in a longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector.

Surface emitting laser, information acquisition apparatus, and imaging apparatus

The present invention employs an actuator including: a movable portion connected to a reflecting member having a reflective surface; a movable comb electrode disposed at a distance from the reflecting member, supported by the movable portion, and extended in a direction parallel to the reflective surface; a stationary comb electrode supported by a supporting portion, extends in the direction parallel to the reflective surface, and disposed alternately with the movable comb electrode; and a voltage controller that applies a voltage to the movable comb electrode and the stationary comb electrode to displace the movable comb electrode and the movable portion in a direction normal to the reflective surface. A portion that supports the movable comb electrode and a portion that supports the stationary comb electrode are disposed such that the movable comb electrode and the stationary comb electrode pass each other.

Actuator and movable mirror

To provide a wavelength tunable light source which can both ensure operation speed and reduce a drive voltage. A wavelength tunable light source according to the present invention includes a pair of reflectors at least one of which is a movable reflector, an active layer provided between the pair of reflectors, and a beam on part of which the movable reflector is formed and which is supported by a support member. The beam includes a blade part projecting between the support member and the movable reflector in a direction intersecting a stretching direction of the beam, and a center of gravity of the beam in the stretching direction is located at a distance less than half a length of the beam in the stretching direction.

Wavelength tunable light source

There is provided a method for manufacturing a capacitive micromachined ultrasonic transducer. In this method, a first insulating layer and a vibrating membrane are bonded by heat treatment and a second insulating layer is formed by thermal oxidation in a single heating step, with a cavity provided in the transducer communicating with the outside of the transducer through a communication portion.

Method for manufacturing capacitive micromachined ultrasonic transducer and apparatus configured to obtain subject information using the capacitive micromachined ultrasonic transducer

An airtight container manufacturing method includes the steps of (a) exhausting an inside of a container through the through-hole; (b) arranging a spacer along a periphery of the through-hole on an outer surface of the container the inside of which has been exhausted; (c) arranging a plate so that the spacer and the through-hole are covered by the plate and a gap is formed along a side surface of the spacer between the plate and the container outer surface; and (d) arranging the cover to cover the plate and bonding the cover and the container outer surface via sealant positioned between the cover and the container outer surface. The sealing includes hardening the sealant after deforming the sealant by pressing the plate with the cover so that the gap is infilled with the sealant.

Growing community of inventors

Tokyo, Japan

Koichiro Nakanishi