Taiyo Yuden Co., Ltd.

Nec Corporation

Thk Co., Ltd.

Koichiro Morita

Minoru Ryu

Katsuya Taniguchi

Yoshiki Iwazaki

Youichi Mizuno

Kenji Saito

Yasuhiro Matsumoto

Tetsuo Shimura

Yasunobu Kawamoto

Ko Asai

Yuji Tsushima

Hideya Teraoka

Chie Kawamura

Tomoya Hagiwara

Kunihiko Nagaoka

Atsushi Imai

Hirokazu Chazono

Hisamitsu Shizuno

Tomoaki Nakamura

Mikio Tahara

Yukihiro Konishi

Tetsuhiko Fukuoka

Shoji Kusumoto

Hiroshi Kaneshige

Katsuya Fukushima

Noriyuki Chigira

Yoshikazu Okino

Kazumichi Hiroi

Masashi Sugiura

Hitoshi Shibata

Satoko Namiki

Noriyuki Kohzu

Natsumi Yuzakino

Kana Tamura

Yuta Fuse

A multilayer ceramic electronic device includes a plurality of internal electrode layers, a plurality of dielectric layers, each of which has a perovskite structure that is expressed by a general formula of ABO, a pair of cover layers respectively provided on an upper end and a lower end in a stacking direction in a capacity section, and has a main component that is a same as a main component of the plurality of dielectric layers. The capacity section has a first section positioned in a center portion in the stacking direction and a pair of second sections outside of the first section in the stacking direction. An A/B ratio of the first section is larger than the A/B ratio of the second section. The A/B ratio of the pair of cover layers is larger than the A/B ratio of the first section.

Multilayer ceramic electronic device and manufacturing method of the same

A multilayer ceramic electronic device includes a plurality of internal electrode layers that face each other; and a plurality of dielectric layers, each of which is sandwiched by each two of the plurality of internal electrode layers. A main component of the plurality of dielectric layers is barium titanate zirconate. In each of the plurality of dielectric layers, an amount of zirconium is 2 at % or more and 14 at % or less with respect a total amount of titanium and zirconium. Curie point of the plurality of dielectric layers is less than 85 degrees C. An average thickness of each of the plurality of dielectric layers is 1 μm or less.

Multilayer ceramic electronic device with zirconium

A dielectric body includes a plurality of crystal grains of which a main component is barium titanate, and an additive including Zr, Eu and Mn. At least one of the plurality of crystal grains has a core-shell structure having a core and a shell. A Zr/Ti atomic concentration ratio is 0.02 or more and 0.10 or less. An Eu/Ti atomic concentration ratio is 0.001 or more and 0.03 or less. A Mn/Ti atomic concentration ratio is 0.005 or more and 0.05 or less.

Dielectric body, multilayer ceramic capacitor, manufacturing method of dielectric body, and manufacturing method of multilayer ceramic capacitor

A dielectric material includes a base material containing barium zirconate titanate as a main component, containing zirconium in an amount of 4 at % or more and 30 at % or less with respect to titanium and zirconium, and having an atomic concentration ratio of barium to titanium and zirconium of 1 or more and 1.1 or less, and a subcomponent containing 2 at % or more and 4 at % or less of europium with respect to titanium of the barium zirconate titanate.

Dielectric material, multilayer ceramic electronic device, and manufacturing method of multilayer ceramic electronic device

A multilayer ceramic device includes a multilayer chip. The multilayer chip has a capacity section, a side margin and an intermediate portion. The intermediate portion is provided between the capacity section and the side margin. An A/B ratio is larger in the side margin than in the capacity section, and is smaller in the intermediate portion than in the capacity section.

One aspect of the present invention is a multilayer ceramic capacitor including a plurality of dielectric layers composed of a dielectric ceramic containing grains whose main component is barium titanate having a core-shell structure made up of a core part and a shell part, and grains whose main component is calcium titanate having a core-shell structure made up of a core part and a shell part; and a plurality of internal electrodes stacked alternately with each of the plurality of dielectric layers.

Multilayer ceramic capacitor and method for manufacturing the same

A ceramic electronic device includes a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked. A main component of the plurality of dielectric layers is a ceramic having a perovskite structure of which an A site includes at least Ba and of which an A/B ratio is 0.980 or less. The plurality of internal electrode layers include a co-material. A total amount of Ti, Zr and Hf is 90 mol % or more in metal elements included in the co-material and an amount of Ba is 10 mol % or less in the metal elements.

Ceramic electronic device and manufacturing method of ceramic electronic device

A dielectric body includes a plurality of crystal grains of which a main component is barium titanate, and an additive including Zr, Eu and Mn. At least one of the plurality of crystal grains has a core-shell structure having a core and a shell. A Zr/Ti atomic concentration ratio is 0.02 or more and 0.10 or less. An Eu/Ti atomic concentration ratio is 0.001 or more and 0.03 or less. A Mn/Ti atomic concentration ratio is 0.005 or more and 0.05 or less. A total atomic concentration of the one or more rare elements is smaller than an atomic concentration of Eu when the dielectric body has the one or more rare earth elements. A median diameter of the plurality of crystal grains is 200 nm or more and 400 nm or less.

A ceramic electronic device includes a plurality of dielectric layers of which a main component is a ceramic having a perovskite structure, and a plurality of internal electrode layers, each of which is stacked through each of the plurality of dielectric layers and includes a co-material which is inactive against the main component of the plurality of dielectric layers.

A dielectric material includes a perovskite as a main phase, an A site of the perovskite including at least Ba, a B site of the perovskite including at least Ti, and Eu having +2 valence and +3 valence. A ratio of +2 valence of Eu is 21% or more.

Dielectric material, ceramic electronic device, manufacturing method of dielectric material, and manufacturing method of ceramic electronic device

A multilayer ceramic capacitor includes: a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked. A ceramic protection section includes a cover layer and a side margin. A main component ceramic of the ceramic protection section is a ceramic material having a perovskite structure expressed as a general formula ABO. An A site of the perovskite structure includes at least Ba. A B site of the perovskite structure includes at least Ti and Zr. A Zr/Ti ratio which is a molar ratio of Zr and Ti is 0.010 or more and 0.25 or less. An A/B ratio which is a molar ratio of the A site and the B site is 0.990 or less.

Ceramic electronic device with a ceramic protection section having a cover layer and a side margin, and manufacturing method of the same

A multilayer ceramic capacitor includes a multilayer structure having a substantially rectangular parallelepiped shape and including dielectric layers and internal electrode layers that are alternately stacked, the dielectric layers being mainly composed of BaTiO, the internal electrode layers being alternately exposed to two edge faces of the multilayer chip opposite to each other. A Zr/Ti ratio is 0.02 or more and 0.10 or less in a capacity section. A Ba/Ti ratio is more than 0.900 and less than 1.010 in the capacity section. A Eu/Ti ratio is 0.005 or more and 0.05 or less in the capacity section. A Mn/Ti ratio is 0.0005 or more and 0.05 or less in the capacity section. A total amount of a rare earth element or rare earth elements is less than the amount of Eu.

Multilayer ceramic capacitor and dielectric material

A multilayer ceramic capacitor includes: a multilayer structure having a parallelepiped shape in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked and are alternately exposed to two edge faces of the multilayer structure, a main component of the plurality of dielectric layers being a ceramic; and a first cover layer and a second cover layer that sandwich the multilayer structure in a stacking direction of the multilayer structure, a main component of the first cover layer and the second cover layer being the same as that of the dielectric layers, wherein the first cover layer includes a first region spaced from the multilayer structure by at least 50 &#x3bc;m, is thicker than the second cover layer, and has a thickness more than 50 &#x3bc;m.

Multilayer ceramic capacitor

A multilayer ceramic capacitor includes: a multilayer structure in which each of dielectric layers and each of internal electrode layers are stacked, wherein a relationship of 8.0&#x2265;I/I&#x3e;1.40 is satisfied in a TSDC (Thermally Stimulated Depolarization Currents) of temperature elevation rate of 10 degrees C./min under a condition of 130 degrees C., 5 V/&#x3bc;m and a polarization of 30 min, when a peak current value on a lower temperature side in a temperature range of 130 degrees C. to 190 degrees C. is Iand a peak current value on a higher temperature side in a temperature range of 190 degrees C. to 280 degrees C. is I.

Ceramic electronic device

A ceramic electronic device includes: a multilayer structure in which each of dielectric layers and each of internal electrode layers are alternately stacked, a main component of the dielectric layers being ceramic, wherein a relationship of I/I&#x3e;1.40 is satisfied in a TSDC (Thermally Stimulated Depolarization Currents) of temperature elevation rate of 10 degrees C./min under a condition of 130 degrees C., 5 V/&#x3bc;m and a polarization of 30 min, when a peak current value on a lower temperature side in a temperature range of 130 degrees C. to 190 degrees C. is Iand a peak current value on a higher temperature side in a temperature range of 190 degrees C. to 280 degrees C. is I.

Growing community of inventors

Takasaki, Japan

Koichiro Morita