Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Koichiro Misu

Shusou Wadaka

Tsutomu Nagatsuka

Mitsuhiro Koike

Kenji Yoshida

Tomonori Kimura

Akira Yamada

Koji Ibata

Chisako Maeda

Kouji Murai

Fusaoki Uchikawa

Shumpei Kameyama

Kenya Hashimoto

Masatsune Yamaguchi

Tatsuya Ohmori

Kenji Itoh

Yuichi Sasaki

Yosuke Watanabe

Takahide Ishikawa

Toshihisa Honda

Toshio Umemura

Masao Koshinaka

Kousaku Yamagata

Chiharu Miyazaki

Shunpei Kameyama

Isao Murase

Naoto Oka

A cable coupler including an external cylinder mechanism having an inner conductor for electrically connecting the inner conductor itself to the outer conductors of the shielded cables, an outer conductor having a larger diameter than the inner conductor, a gap portion disposed between the inner conductor and the outer conductor, and capacitors arranged in the gap portion, for electrically connecting between the outer conductor and the inner conductor, an inner portion of the external cylinder mechanism being able to be opened and closed along a longitudinal direction, an internal coupling mechanism placed inside the inner conductor and having connecting pins for holding the core wires of the shielded cables, for electrically connecting between the core wires of the shielded cables, and a base for holding the external cylinder mechanism and for electrically connecting the external cylinder mechanism to an external conductor.

Cable coupling connector

The film acoustic wave devices (and) having the same properties are obtained by changing at least one of the followings: the length and/or the width of upper electrode (and); the distance between the upper electrodes (and); the length and/or the width of connecting patterns (and); areas of bonding pads (and); and the pattern shape for the film acoustic wave device (and) such as the area of capacitor electrode connected electrically to the bonding pads (and); the property variations of film acoustic wave devices (and) caused from the positioning at waferis compensated.

Film acoustic wave device, manufacturing method and circuit device

Filter circuitry is provided with a series element and a parallel element. The filter circuitry transmits signals that fall within a certain passband and attenuates signals that don't fall within the certain passband. The series element is comprised of a resonance element having antiresonance characteristics, and the parallel element is comprised of a series circuit including an inductor and a capacitor.

Filter circuit with series and parallel elements

A film acoustic wave device having similar properties are obtained by changing at least one of the length and/or the width of upper electrodes; the distance between the upper electrodes; the length and/or the width of connecting patterns; the areas of bonding pads; and the pattern shape for the film acoustic wave device such as the area of capacitor electrodes electrically connected to the bonding pads. Property variations of the film acoustic wave devices caused from the positioning at a wafer is compensated for.

There is disclosed an acoustic wave apparatus, constructed in such a manner that a surface rotated in the range of 34&deg; to 41&deg; from a crystal Y axis around the crystal X axis of lithium tantalate is set as the surface of a substrate, a standardized electrode thickness (h/&lgr;) obtained by standardizing a thickness h of an electrode finger constituting at least a part of an interdigital transducer by a wavelength &lgr; of a surface acoustic wave is set to the range of 0.01 to 0.05, and a duty ratio (w/p) of the electrode finger decided based on a width w and an arraying cycle p of the electrode finger is set to the value ranging from 0.6 to just below 1.0.

Elastic wave device

There is provided a film bulk acoustic wave device comprising: a silicon substrate , a dielectric film including a silicon nitride formed on the substrate and a silicon oxide on the silicon nitride , a bottom electrode formed on the dielectric film , a piezoelectric film formed on the bottom electrode , and a top electrode formed on the piezoelectric film , wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate which is opposite to a region including a part where the top electrode exists is removed from the bottom surface of the silicon substrate to a boundary surface with the silicon nitride

Film bulk acoustic wave device

In an elastic wave device, an electrode, which is formed in a comb-like shape and is made of conductive material having a prescribed thickness, is arranged on a substrate of a piezo-electric element containing lithium niobate as a main component. Also, in this elastic wave device, a surface of the substrate is set to a plane which is obtained by rotating a plane perpendicular to a crystal Y-axis of the lithium niobate by an angle ranging from 55 degrees to 57 degrees around a crystal x-axis of the lithium niobate, and a duty ratio (a width w of an electrode finger/an arrangement interval p of a pair of electrode fingers) of each of a plurality of electrode fingers composing the electrode is equal to or higher than 0.4 and is lower than 1.0.

Thin film piezoelectric element

A piezoelectric thin film device which is composed mainly of a substrate, a piezoelectric thin film formed on the substrate, and thin film electrodes formed on both the upper and lower surfaces of the thin film. The thin film is resonated by applying an AC voltage across the electrodes. A substrate removed section is formed by partially or entirely removing the substrate below the thin film and opened to both the front and rear surfaces of the substrate through openings so as to relieve the pressure variation in the substrate removed section below a resonant structure.

Piezoelectric thin film device

A detecting device for detecting a physical quantity of an object, which includes a transmission signals generating device for generating first and second transmission signals of different frequencies, an ultrasonic wave transmission device that is excited by the first and the second transmission signal, for transmitting ultrasonic pulses corresponding to the first and the second transmission signal to an object, and a signal processing device for carrying out a signal processing process on the first and the second echo. The signal processing process is such that it detects phases of the first and second echo corresponding to the first and second transmission signal, which are received by the ultrasonic wave receiving device. An indeterminacy integer times as large as 2.pi. of the phase of each of the first and second echo is determined on the basis of the information of the amplitudes of the first or the second echo, and a distance from the ultrasonic wave transmission device through an object to the ultrasonic wave receiving device along an ultrasonic wave propagating path is detected on the basis of the determined phase of the first or second echo.

Apparatus and method for detecting a measurable quantity of an object

Embodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.

An ultrasonic detecting apparatus which includes a sequence generating means and a transmission signal generating means for generating a transmission signal corresponding to the sequence. The detecting apparatus also includes a transmitting means to transmit waves, which may be ultrasonic waves, to an object and a receiving means for receiving an echo corresponding to the transmission signal. A correlation operation means performs a correlation operation with respect to the echo. In another general aspect, the sequence generating means may generate more than one sequence, some of whose auto-correlation functions produce substantially zero sidelobe in the summed result. In a further general aspect, the sequence generating means generates two or more sequences, with each of the sequences being different from the others and having substantially the same auto-correlation function as the others.

Echo based detecting apparatus employing signal generator and correlator

An ultrasonic detecting apparatus which includes a generator which generates more than three transmission signals. The detecting apparatus also includes a transmitter/receiver which transmits waves, which may be ultrasonic waves, to an object and receives echoes corresponding to the transmission signal. A correlator performs correlation operations with respect to the echoes. The results of the correlation operations are processed to obtain a signal with substantially zero side lobes.

Apparatus and method for detecting flaws in and inspecting an object

An inspection apparatus utilizing a pulse compression technique is described which comprises a signal generator, a transmission/reception probe; first and second correlators and an adder. The signal generator generates a composite transmission signal consisting of signals Sap(t), Saq(t), Sbp(t) and Sbq(t) respectively based on a basic unit signal ga(t) and a sequence {p}, the signal ga(t) and a sequence {q}, a basic unit signal gb(t) and the sequence {p}, and the signal gb(t) and the sequence {q}, to the probe to transmit the composite transmission signal to a target. The first correlator performs a correlation operation of echo signals Rap(t), Raq(t), Rbp(t) and Rbq(t) corresponding to the signal Sap(t), Saq(t) and Sbq(t) by utilizing reference signals Ua(t) and Ub(t) based on the sequences to provide results Caap(t), Caaq(t), Cbbp(t) and Cbbq(t). The second correlator performs a correlation operation of the results Caap(t), Caaq(t) Cbbp(t) and Cbbq(t) by utilizing the sequences {p} and {q} to provide compressed pulses Caapp(t), Caaqq(t), Cbbpp(t) and Cbbqq(t). These pulses are summed up at the adder to provide a composite compressed pulse C having the large amplitude main lobe and small amplitude side lobes.

Inspection apparatus

An ultrasonic non-destructive inspecting apparatus is constructed to comprise a transmission signal generator, an ultrasonic probe, a correlator and an adder wherein a transmission signal based on a sequence is generated and transmitted to a specimen, its echo is correlation processed with an appropriate reference signal, and the results of the correlation processes are summed to judge a reflection matter within the specimen.

Growing community of inventors

Tokyo, Japan

Koichiro Misu