Canon Kabushiki Kaisha

Koichiro Iwata

Tetsuya Itano

Kohichi Nakamura

Takeshi Akiyama

Kazuhiro Saito

Hidekazu Takahashi

Yu Arishima

Hiroki Hiyama

Hiroo Akabori

Hiroyuki Morita

Kazuo Yamazaki

Tomoyuki Noda

Masaki Sato

Yu Maehashi

Yoshiaki Takada

Mineo Shimotsusa

Taro Kato

Hiroaki Kameyama

Kazuhiro Sonoda

Kazuki Ohshitanai

Masahiro Kobayashi

Hideo Kobayashi

Fumihiro Inui

Satoshi Kato

Seiichirou Sakai

Takuro Yamamoto

Kazumichi Morita

Daisuke Yoshida

Takanori Watanabe

Akira Okita

Atsushi Suzuki

Mahito Shinohara

Katsuhito Sakurai

Hideaki Takada

Yukihiro Kuroda

Masaaki Iwane

Jun Iba

Shintaro Takenaka

Takeru Ohya

Takehito Okabe

Takashi Muto

Yoichi Wada

Yasuji Ikeda

Hidetoshi Hayashi

Shinichiro Shimizu

Tomoya Kumagai

Kouhei Hashimoto

Daisuke Inoue

Masanori Shibata

Akira Ohtani

Kosuke Asano

Kentaro Tsukida

Akira Oseto

Tatsunori Kato

Ryunosuke Ishii

Shota Shigemori

A photoelectric conversion device includes a first substrate and a second substrate. A plurality of photoelectric conversion circuits is disposed on the first substrate. A plurality of floating diffusion circuits, a first switch, and a plurality of amplification transistors are disposed on the second substrate. The plurality of floating diffusion circuits is connected to the plurality of photoelectric conversion circuits. The first switch is configured to connect a first floating diffusion circuit and a second floating diffusion circuit in the plurality of floating diffusion circuits. The plurality of amplification transistors is configured to output signals based on potentials of the plurality of floating diffusion circuits.

Photoelectric conversion device having signal readout circuits and photoelectric conversion system

In a photoelectric conversion device, in a first period in which a respective different offset voltage is supplied to a comparator included in each of a plurality of AD conversion circuits, a control unit performs control to bring the offset voltage into a first driving state in which a voltage change amount per unit time of the offset voltage is a first voltage amount, and, in a second period in which a ramp signal is supplied to the comparator included in each of the plurality of AD conversion circuits, the control unit performs control to bring the ramp signal into a second driving state in which a voltage change amount per unit time of the ramp signal is a second voltage amount, wherein the first voltage amount is larger the second voltage amount.

Photoelectric conversion device, driving method for photoelectric conversion device, and apparatus

A photoelectric conversion device includes pixels each including a plurality of photoelectric conversion elements and arranged in a matrix, and a control circuit that controls the pixels on row-by-row. Each pixel may output a first signal corresponding to charge generated by the first photoelectric conversion element and a second signal corresponding to charge generated by the first and second photoelectric conversion elements. The control circuit performs a first reset operation and a first readout operation for reading out the second signal on pixels in a first row, and performs a second reset operation, a second readout operation for reading out the first signal, and a third readout operation for reading out the second signal on pixels in a second row. The control circuit performs a third reset operation on pixels of any one of rows in a period one before a period during which the second reset operation is performed.

Photoelectric conversion device and method of driving photoelectric conversion device

A pixel is configured to output a signal. An input node is configured to input the signal. A holding circuit is configured to hold the signal input to the input node. An amplifier is configured to input the signal held in the holding circuit. An output node is configured to output the signal from the amplifier. An input switch is connected in series between the input node and the holding circuit. An output switch is connected in series between the amplifier and the output node. In a first operation mode, the output switch is in an on state, and the input switch is turned on or off at a predetermined timing to hold the signal in the holding circuit. In a second operation mode, the input switch and the output switch are an off state and the amplifier outputs a constant voltage.

Photoelectric conversion device, and apparatus

A photoelectric conversion device includes a pixel array having aperture pixels arranged so as to form rows and columns, signal lines arranged in the pixel array so as to allow readout of signals from the aperture pixels, current sources connected to the signal lines, a first voltage supply line configured to supply a first reference voltage to the aperture pixels, a first pad connected to the first voltage supply line, a bias circuit configured to supply a bias voltage to the current sources, a second voltage supply line electrically separated from the first voltage supply line, and configured to supply a second reference voltage to the bias circuit, and a second pad connected to the second voltage supply line.

Pixel array having separate voltage supply lines for pixels and bias circuitry

A unit circuit includes a photoelectric conversion element, an output transistor including an input node and configured to output a signal based on a charge from the photoelectric conversion element, a reset transistor, and a first transistor connected to the input node and configured to change a capacitance of the input node. A first control signal supplied to a gate electrode of the first transistor has at least three types of voltages.

Photoelectric conversion device, imaging system, moving body, and stackable semiconductor device

An imaging device includes: a first pad portion that is connected to a voltage supply line in an aperture pixel region, and to which a reference voltage from outside of the semiconductor substrate is supplied; and a second pad portion that is connected to the voltage supply line in the light-shielded pixel region, and to which the reference voltage from outside of the semiconductor substrate is supplied, the second pad portion being separated from the first pad portion.

Imaging device and imaging system

An image capturing apparatus includes a plurality of pixels, a signal line connected to the plurality of pixels, and a limiter circuit configured to limit an amplitude of the signal at the signal line. A first pixel in the plurality of pixels sequentially outputs a noise signal, a focus detection signal, and an image capturing signal to the signal line. A second pixel in the plurality of pixels sequentially outputs a noise signal and an image capturing signal to the signal line, and wherein a potential of the signal at the signal line is set to a potential by the limiter circuit during a period after the second pixel outputs the noise signal and before the second pixel outputs the image capturing signal.

Image capturing apparatus, photoelectric conversion system, and moving body

An analog-to-digital conversion circuit includes a comparator circuit configured to perform processing of comparison between an analog signal and a ramp signal, and a counter configured to perform count processing in parallel with the comparison processing by the comparator circuit. The analog-to-digital conversion circuit acquires digital data, which is a count value corresponding to the comparison processing, and subjects the analog signal to analog-to-digital conversion. A period from the start to the end of the analog-to-digital conversion of the one analog signal includes a first period and a second period following the first period. The first and the second periods are switched based on an output of the counter. The count processing is performed at a high speed during the first period and performed at a low speed during the second period.

Analog-to-digital conversion circuit using comparator and counter, photoelectric conversion apparatus using comparator and counter, and photoelectric conversion system using comparator and counter

A photoelectric conversion device includes pixels including first and second photoelectric converters, a memory unit, and a transfer unit for transferring signals in the memory unit to a processing unit. The pixels output a first signal based on a signal of the first photoelectric converter, and a second signal based on signals of the first and second photoelectric converters. The transfer unit performs on row-by-row a first transfer period of transferring the first signal in the memory unit and a second transfer period of transferring the second signals held in the memory unit. A column a pixel outputting the first signal transferred during the first period of a first row is arranged is different from a column a pixel outputting the first signal transferred during the first period of a second row is arranged.

Photoelectric conversion device and photoelectric conversion system

An AD conversion circuit includes a comparator configured to compare an analog signal with a ramp signal and output a comparison result signal indicating a result of the comparison, and performs an AD conversion using the comparison result signal. In the comparison, a potential of the ramp signal changes with a lapse of time from a first potential to a second potential. Before the comparison, the potential of the ramp signal changes at a first change rate and then changes at a second change rate smaller than the first change rate, the potential of the ramp signal changes from the first potential to a third potential between the first potential and the second potential, and the comparator is reset in a state where the third potential is input to the comparator.

AD conversion circuit, photoelectric conversion apparatus, photoelectric conversion system, and moving body

According to the present disclosure, column circuits operate selectively in a first drive mode to output a comparison signal or a second drive mode to acquire a correction value of a first reference signal and a second reference signal, and a selector circuit of a second column circuit selects the same reference signal out of the first reference signal and the second reference signal in the first drive mode and the second drive mode.

Imaging device, imaging system, and drive method of imaging device

A semiconductor device has a first transistor of a first conductivity type and a second transistor of a second conductivity type, the first transistor is arranged in an active region of a semiconductor substrate, and a gate electrode and the active region overlap with each other in a plan view and also have a portion located between the source and the drain of the first transistor of the semiconductor substrate. In the channel width direction, an impurity concentration of the second conductivity type is higher at the end than on the center side of the portion.

Semiconductor device, semiconductor memory, photoelectric conversion device, moving unit, manufacturing method of photoelectric conversion device, and manufacturing method of semiconductor memory

A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.

Photoelectric conversion apparatus and image pickup system having photoelectric conversion apparatus

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Kawasaki, Japan

Koichiro Iwata