Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Koichiro Inomata

Yoshiaki Saito

Kentaro Nakajima

Tatsuya Kishi

Masayuki Sagoi

Shiho Okuno

Masashi Sahashi

Tetsuhiko Mizoguchi

Isao Sakai

Susumu Hashimoto

Michio Hasegawa

Keiichiro Yusu

Tadahiko Kobayashi

Yoshinori Takahashi

Minoru Amano

Takao Sawa

Shigeki Takahashi

Senji Shimanuki

Hiromi Niu

Toru Higuchi

Shinichi Murata

Koichi Mizushima

Takashi Yamauchi

Toshihiro Onodera

Osamu Kubo

Tadashi Ido

Tomokazu Domon

Akihiko Tsutai

Tutomu Nomura

Naoyuki Sori

Masakatsu Haga

Roger Highmore

Teruyuki Kinno

Hideki Yamamiya

Hitoshi Iwasaki

Shinichi Nakamura

Yuichi Ohsawa

Shinobu Fujita

Junichi Akiyama

Katsutaro Ichihara

Tetsufumi Tanamoto

Reiko Kondoh

Yoshio Takamura

Emiko Higashinakagawa

Hideo Ogiwara

Hironori Fukuda

Hiroshi Tateishi

Shoichi Higo

Seiji Kajiwara

Kanemitsu Sato

Toshihiko Ohto

Osamu Arakawa

A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni&#x2014;Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Magnetoresistive element and magnetic memory device

There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

Magnetic memory with reduced write current

A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni&mdash;Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Magnetic memory having antiferromagnetically coupled recording layer

A magnetic memory device comprises a memory cell assembled by first and second tunnel junction portions and a switch, each of the first and second tunnel junction portions being formed of a stack of a pinned layer in which a magnetization direction is fixed and a record layer in which a magnetization direction changes depending on an external magnetic field. A first data line is connected to a first end of the first tunnel junction portion. A second data line is connected to the first end of the second tunnel junction portion. A bit line is connected to the second end of the first tunnel junction portion and the second end of the second tunnel junction portion via the switch.

Magnetic memory device

The present invention provides a spin-dependent tunneling effect element expectable to offer the spin accumulation effect at room temperature while also providing a data storage or &ldquo;memory&rdquo; element and magnetic reading head each using the tunnel effect element A first concept of the present invention lies in provision of a magnetic element characterized by comprising first and second ferromagnetic layers and a layer of semiconductor particles neighboring the first ferromagnetic layer with a first tunnel barrier disposed between them and also neighboring the second ferromagnetic layer with a second tunnel barrier laid therebetween. A magnetic memory device is also provided which comprises a plurality of memory cells each including a spin-dependent tunneling effect element having a first ferromagnetic electrode, a second ferromagnetic electrode, and a gate electrode as inserted between the first and second ferromagnetic electrodes through first and second ferromagnetic layers; data lines connected in common to the first or second ferromagnetic electrode of multiple spin-dependent tunneling effect elements; and a plurality of word lines capacitance-coupled to the gate electrodes of different memory cells respectively, characterized in that cell selection of selecting one from among multiple memory cells as commonly connected to a data line during reading information stored therein is performed by letting one of the word lines change in potential and then changing the resistance value of a memory cell capacitance-coupled to such selected word line.

Magnetic element, magnetic read head, magnetic storage device, magnetic memory device

A magnetic element which has a laminate film composed of ferromagnetic-dielectric mixed layer and dielectric layer laminated alternately, said ferromagnetic-dielectric mixed layer being a mixture of a ferromagnetic material having coercive force and a dielectric material, with the volume of the former being equal to or larger than that of the latter. The ferromagnetic-dielectric mixed layer has the ferromagnetic layer which is arranged close thereto with a dielectric layer interposed between them. Tunnel current flows between the ferromagnetic-dielectric mixed layer. The magnetic layer with a smaller coercive force has its spin switched so that the magnetoresistance effect is produced. The magnetic element having a ferromagnetic tunnel junction is designed such that the rate of change in magnetoresistance increases and the resistance of the element decreases and the rate of change in magnetoresistance varies less depending on voltage.

Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system

A semiconductor device according to the invention is constructed as below. A charge accumulating layer which contains a magnetic substance is formed directly on a semiconductor substrate, and a gate insulating film is formed on the charge accumulating layer. Further, a gate electrode is formed on the gate insulating film, and source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween. Another semiconductor device according to the invention is constructed as below. A first gate insulating film formed on a semiconductor substrate, and a charge accumulating layer which contains a magnetic substance is formed on the first gate insulating film. Further, a second gate insulating film is formed on the charge accumulating layer, and a gate electrode is formed on the second gate insulating film. Source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween.

Semiconductor element having charge accumulating layer under gate electrode and using single electron phenomenon

A magnetic element comprises a granular magnetic film which has ferromagnetic fine particles dispersed in a dielectric matrix and does not display superparamagnetism and further possesses a finite coercive force, and a ferromagnetic film. A granular magnetic film and a ferromagnetic film are stacked or arrayed along one surface of a substrate and constitutes a ferromagnetic tunnel junction film. In the ferromagnetic tunnel junction film, the granular magnetic film functions as a barrier. Of the granular magnetic film and the ferromagnetic film, by varying spin direction of one ferromagnetic film through an external magnetic field, a giant magnetoresistance effect is manifested. Such a magnetic element is characterized in that magnetoresistance change rate is large, saturation magnetic field is small, resistance of the element can be controlled to an appropriate value, performance is small in its variation and stable.

Magnetic element, and magnetic head and magnetic memory device using

A discrete energy levels are introduced in a ferromagnetic layer of a magnetic device, and tunnel current flows through a plurality of tunnel junctions. The tunnel junctions are disposed between first and second electrodes and the first ferromagnetic layer is interposed between the two tunnel junctions. Variations of the tunnel current depend on the relationship between magnetization directions of the ferromagnetic layer and another ferromagnetic layer. Tunnel current varies between parallel relation and anti-parallel relation.

Spin dependent conduction device

Growing community of inventors

Yokohama, Japan

Koichiro Inomata