Tosoh Finechem Corporation

Tosoh Corporation

Sagami Chemical Research Center

Koichiro Inaba

Kouji Toyota

Kenichi Haga

Toshio Naka

Noriaki Oshima

Taishi Furukawa

Tetsu Yamakawa

Ken-ichi Tada

Toshiaki Taniike

Hirokazu Chiba

Shizuo Tomiyasu

Kohichi Tokudome

Yujin Takemoto

Toshiki Yamamoto

Masahiro Aoki

Tadahiro Yotsuya

Kentaro Sakai

Kouichi Tokudome

Ken-Ichi Tada

A method for producing aluminum oxide is provided. The method uses an aluminum-oxide-forming agent containing a partially hydrolyzed aluminum alkyl compound containing an aluminum trialkyl or a mixture thereof, and a solvent. It is thus possible to produce an aluminum oxide thin film or aluminum oxide particles on or in a substrate that is not resistant to polar solvents. A method of producing a polyolefin-based polymer nanocomposite containing zinc oxide particles or aluminum oxide particles using a solution containing a partially hydrolyzed zinc alkyl or a solution containing a partially hydrolyzed aluminum alkyl is also provided. The polyolefin-based polymer nanocomposite contains a polyolefin substrate and zinc oxide particles or aluminum oxide particles, and does not contain a dispersant. The zinc oxide particles or aluminum oxide particles have an average particle size of less than 100 nm.

Aluminum oxide-forming composition and method for producing same

Polyolefin-based polymer nanocomposite containing zinc oxide particles and method of producing same

An aluminum oxide article containing at least aluminum atoms and oxygen atoms is described. When observed under a transmission electron microscope, a cross section of the aluminum oxide article contains crystallized parts, in which a crystal lattice image is recognizable, and a non-crystallized part, in which no crystal lattice image is recognizable, and has an island-and-sea structure consisting of isolated parts containing the crystallized parts and the continuous non-crystallized part. The isolated parts correspond to island parts in the island-and-sea structure, the continuous non-crystallized part corresponds to a sea part, and a plurality of the island parts are uniformly distributed in the sea part. An aluminum oxide for improving the battery performance of a lithium ion secondary battery, the scratch resistance and hardness of a cured film, and the gas barrier properties of a gas barrier film is provided.

Aluminum oxide article

Aluminum-oxide-forming composition and method for producing same, and polyolefin-based polymer nanocomposite containing zinc oxide particles or aluminum oxide particles and method of producing same

A dialkylzinc partial hydrolysate-containing solution which can be handled in air and can form a zinc oxide thin film in air and a method for producing the zinc oxide thin film are provided. The dialkylzinc partial hydrolysate-containing solution contains a partial hydrolysate of dialkyl zinc represented by general formula (1) and a solvent which has a boiling point of 160&#xb0; C. or higher, an amide structure represented by general formula (2), and which is an organic compound having a cyclic structure. The partial hydrolysate is the dialkylzinc hydrolyzed with water in a molar ratio in the range of 0.4 to 0.9 with respect to zinc in the dialkylzinc. A method for producing the zinc oxide thin film by applying the dialkylzinc partial hydrolysate-containing solution to a base material is also provided. 

Dialkylzinc partial hydrolysate-containing solution and method of production of zinc oxide thin film using the solution

[Object] To improve heat stability of diethylzinc which is used for a catalyst of polymerizing, an organic synthetic reaction reagent and a raw materials for providing a zinc film by MOCVD. And to offer the diethylzinc composition being superior in heat stability, even if it handles for a long term a metal zinc particle does not precipitate. [Means for Solving Problem] Use a diethylzinc composition added a compound which has particular carbon-carbon double bond to a diethylzinc.

Diethylzinc composition, method for heat stabilization, and compound for heat stabilization

Disclosed is a composition for forming a zinc oxide thin film, which contains an organic zinc compound as a starting material, is not ignitable, and can be easily handled. The composition for forming a zinc oxide thin film is capable of forming a transparent zinc oxide thin film which is not doped or doped with a group 3B element by being heated at 300&#xb0; C. or less. Also disclosed is a method for obtaining a transparent zinc oxide thin film, which is not doped or doped with a group 3B element, using the composition. Specifically, the composition for forming a zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to the organic zinc compound or a solution of the organic zinc compound and a group 3B element compound. In cases when a group 3B element compound is contained, the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3. The composition is applied to a substrate surface and then heated, thereby forming a zinc oxide thin film which is doped with the group 3B element.

Composition for manufacturing doped or undoped zinc oxide thin film and method for manufacturing zinc oxide thin film using same

Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M(NR)X(L)(2) and an alkali metal alkoxide (3): (wherein Mrepresents niobium atom or tantalum atom, Rrepresents an alkyl group having from 1 to 12 carbon atoms, Rrepresents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and Mrepresents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Imide complex, method for producing the same, metal-containing thin film and method for producing the same

A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M(NRR)(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; Rand Reach represents Calkyl, etc.; Rrepresents Calkyl, etc.; Rand Reach represents Calkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases). 

Metal-containing compound, its production method, metal-containing thin film, and its formation method

Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, Rand Rrepresent an alkyl group having from 1 to 6 carbon atoms. Rand Reach independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. Rand Reach independently represents an alkyl group having from 1 to 4 carbon atoms.).

Titanium complexes, their production methods, titanium-containing thin films, and their formation methods

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Shunan, Japan

Koichiro Inaba