Murata Manufacturing Co., Ltd.

Koichi Yoshida

Yoshihiro Yoshida

Takahiro Oguchi

Heikki T Kuisma

Yoshihiro Konaka

Hiroshi Kawai

Makoto Inai

Naoto Yatani

Kaoru Kishigui

Ryosuke Niwa

A pressure sensor structure includes a sensor body including a diaphragm plate that functions as a sense electrode, a base electrode that faces the diaphragm plate, and a sidewall layer maintaining a gap between the diaphragm plate and the base electrode, and a conductive guard substrate to support the sensor body. The sidewall layer includes a guard electrode layer and upper and lower electrically insulating layers to electrically insulate the guard electrode layer. An electrically insulating layer is between the guard substrate and the sensor body to electrically insulate the guard substrate. The guard substrate is electrically connected to the guard electrode layer to function as a guard electrode together with the guard electrode layer.

Pressure sensor structure, pressure sensor device, and method of manufacturing pressure sensor structure

A semiconductor device includes a base, a detector on the base and including a first surface on which a detection portion is provided, and a resin package on the base and including an exposure hole to externally expose the detection portion of the detector. At least a portion of an outer peripheral edge of the first surface of the detector is exposed in the exposure hole. The resin package includes a depressed portion along the portion of the outer peripheral edge that is exposed in the exposure hole.

Semiconductor device with depression in package and method for manufacturing same

A pressure sensor includes a base substrate, a first insulating layer at the base substrate, a stationary electrode at the first insulating layer, a side-wall portion around the stationary electrode at the first insulating layer, and a membrane having electrical conductivity, facing the stationary electrode across a space, and supported by the side-wall portion. The side-wall portion includes a shield electrode on the first insulating layer and a second insulating layer on the shield electrode. A distance between the stationary electrode and the membrane is less than a distance between the shield electrode and the membrane.

Pressure sensor including side-wall portion including shield electrode

A semiconductor device includes a base substrate, a detection device provided on the base substrate and including a detector, a first connector electrically connecting the base substrate and the detection device, and a resin package provided on the base substrate and embedded with the detection device and the first connector. The resin package includes an exposure hole exposing the detector of the detection device to the outside, and a concave-convex portion.

Semiconductor device and electronic apparatus

A microelectromechanical pressure sensor structure that comprises a planar base, a side wall layer and a diaphragm plate. The side wall layer forms side walls that extend away from the planar base into contact with the diaphragm plate. The side wall layer is formed of at least three layers, a first layer and a second layer of insulating material and a third layer of conductive material, wherein the third layer is between the first layer and the second layer. The conducting layer provides a shield electrode within the isolating side wall layer. This shield electrode is adapted to reduce undesired effects to the capacitive measurement results.

Micromechanical pressure sensor structure having a side wall layer

A bulk acoustic wave resonator includes a substrate, a resonator section in which a piezoelectric film is sandwiched between a pair of electrodes, and a vibration region where the electrodes overlap when viewed in a film thickness direction is defined, an elastically deformable support section that connects the substrate and the resonator section, a membrane arranged between the resonator section and the substrate to face the vibration region of the resonator section and be fixed on the substrate with a space in between, and driver sections that are defined in the resonator section and the substrate adjacent to the vibration region and the membrane, and that move the resonator section toward and away from the substrate. The vibration region of the resonator section contacts the membrane when the driver sections move the resonator section close to the substrate.

Bulk acoustic wave resonator

An external force detection device includes a weight portion, a supporting portion, and a beam portion provided in an SOI substrate which includes an upper layer and a lower layer that are capable of being etched with a first etching gas and sandwich an intermediate layer that is capable of being etched with a second etching gas. The weight portion is displaced in accordance with an external force to cause the beam portion to deform. The upper layer in a gap portion between the weight portion and the supporting portion is etched. The lower layer in the gap portion and the lower layer below the beam portion are etched. The intermediate layer in the gap portion is then etched. The groove formed by etching the upper layer has a multidirectional two-dimensional shape.

External force detection device

A variable capacitance element includes a movable element provided above a substrate using supporting portions and support beams so as to be displaced from the substrate. An insulating film and a movable electrode are provided on a conductor facing surface of the movable element. A driving electrode is arranged to displace the movable element, between a signal cutoff position and a signal passage position, whereby a high frequency signal transmitted through a transmission line is cut off or allowed to pass. The insulating film uses compressive stress to warp the movable element and the movable electrode in a direction of warping in a convex form toward the transmission line, and maintains this warping direction.

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Nagaokakyo, Japan

Koichi Yoshida