Tdk Corporation

Disco Corporation

Foster Electric Company, Limited

Nippon Aleph Co., Ltd.

Showa Denko K.k.

Sekisui Chemical Co., Ltd.

Other

Fujitsu Corporation

Kansai Paint Company, Ltd.

Koichi Yajima

Masahiko Kitamura

Shinya Fujito

Hiroshi Hasegawa

Yoichi Hirose

Shiro Sasaki

Masaya Hagiyama

Eiichi Kosuge

Yusuke Kimura

Shinichi Namioka

Tetsuhito Yoneyama

Masatoshi Nanjo

Osamu Kohmoto

Masateru Fukuoka

Shigeru Danjo

Munehiro Hatai

Satoshi Hayashi

Shinya Hashimoto

Yasuhiko Oyama

Katashi Takebuchi

Kazuma Sekiya

Takashi Mori

Masatoshi Nakayama

Kunihiro Ueda

Kazuhisa Arai

Kenji Nakaya

Yuzo Shimobeppu

Kazuhiro Yoshimoto

Yoshiaki Shinjo

Masanori Shibahara

Mitsuhisa Watanabe

Tomotaka Tabuchi

Koichi Tamura

Kazunori Hirose

Satoshi Tateiwa

Etsuo Kawaji

Kouji Takezoe

Kazou Teshirogi

Takatoshi Ooyama

Michihiro Nemoto

Akito Ichikawa

Morikazu Nakada

A rotation angle detection sensor detects the rotation angle of a rotating part attached to a structure including a fixed part and a rotating part that rotates around a rotary shaft. The rotation angle detection sensor includes a reed switch attached to the fixed or rotating part with reeds placed near the rotary shaft. An annular magnet is attached to the rotating or fixed part. A magnetic circuit is formed with respect to the reed switch, with its central axis arranged concentrically with the rotary shaft. When the magnet rotates around the central axis with respect to the reed switch, if the same poles of the magnet are lined up in the longitudinal direction of the reed switch, the reed switch is turned off. If opposite poles of the magnet are lined up in the longitudinal direction of the reed switch, the reed switch is turned on.

Rotation angle detection sensor

A push switch includes a vertically arranged reed switch, a hollow case disposed to surround the reed switch, an annular first magnet fixedly disposed on the lower side in the case to surround the reed switch and magnetized in the axial direction, an annular second magnet disposed to be axially movable on the upper side in the case to surround the reed switch and magnetized in a direction opposite to the first magnet, and a pushing member mounted to the second magnet to move the second magnet to an operating position close to the first magnet at the time of downward operation. The case is positioned so that in a non-operating state, the pushing member is not pressed down within the case. The contact point of the reed switch comes at the center between the first magnet and the second magnet in the axial direction.

Push switch

A compact fall detection sensor includes a case. A magnet is housed in the case. A reed switch with a pair of reeds are integrally positioned around the central axis of the case at the bottom of the case. In an upright state, the magnet is gravitationally positioned in the longitudinal direction of the reed switch around the central axis of the curved surface of the case, each magnetic pole magnetizing the corresponding reed of the reed switch, allowing one of the reeds to be magnetized to N pole and the other reed to S pole to turn on the switch. When inclined from the upright state, the magnet slides along the curved surface of the case and deviates from the central axis, to position only one of the magnetic poles of the magnet around the central axis to turn off the reed switch.

Fall detection sensor

A switch-containing cable when bended does not conduct electricity, but conducts electricity when pressurized with fingers. The cable has belt-like first and second oppositely disposed conductor films including respective first and second belt-like base materials on inner surfaces of which respective first and conductors are disposed; an insulating spacer arranged to maintain a gap therebetween; and a belt-like sheath configured with the first and second conductor films sandwiching the spacer and containing a belt-like conductor film functioning as a switch member in a hollow cavity. The first conductor film constituting the belt-like conductor film is movably overlaid on the insulating spacer, and the hollow cavity of the sheath includes a gap allowing for lengthwise relative displacement of at least the first belt-like base material caused by bending the sheath with respect to the belt-like conductor film housed in the hollow cavity, thereby preventing the cable from conducting electricity when bended.

Switch-containing cable

An earphone device includes first and second earphone bodies into which respective electro-acoustic transducers are built; first and second cables, one end of each of which is connected to the respective earphone body and within each of which a switch member to be turned on by one-way press is disposed over a predetermined range along the length direction of the cable so that the cable has switch functions; wherein a switch is shunted into two switches by the first and second cables, portions of the first and second cables having switch functions are arranged one on top of the other, and an overlapped portion is unidirectionally pressed to simultaneously turn on the respective switches. In addition, a sound-reproducing system is configured by combining a mobile terminal which operates in conjunction with this earphone device.

Earphone device and sound-reproducing system using the same

Earphone

A semiconductor wafer (W) where circuits are formed in the area divided by streets is split into semiconductor chips having individual circuits. By interposing an adhesive sheet, whose adhesive force is lowered by stimulation, between the semiconductor wafer (W) and the support plate (), the front side of the semiconductor wafer (W) is adhered to the support plate (), thereby exposing the rear face () of the semiconductor wafer (W). The rear face () of the semiconductor wafer (W) with the support plate () is ground. After the grinding is finished, the semiconductor wafer (W) held with the rear face () up is diced into semiconductor chips (C). The adhesive sheet is given stimulus to lower the adhesive force and the semiconductor chips (C) are removed from the support plate (). The semiconductor wafer and semiconductor chips are always supported by the support plate, avoiding damage and deformation.

Method for manufacturing semiconductor chip

In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove the semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force that is reduced upon exposure to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer. Thereafter, the support substrate and adhesive layer is removed from the surface of the semiconductor wafer, leaving the semiconductor wafer held by the tape and frame. The semiconductor wafer supported by the tape and frame is cut at streets into individual semiconductor chips.

A water jet processing method for cutting a workpiece having a first group composed of first plural cutting lines extending in a predetermined direction and a second group composed of second plural cutting lines formed perpendicular to the plural cutting lines of the first group along the plural cutting lines of the first group and the plural cutting lines of the second group formed on the workpiece by injecting a water jet, which comprises a first cutting step for injecting a water jet to the cutting lines of the first group continuously and a second cutting step for injecting a water jet to the cutting lines of the second group continuously while the workpiece is supported by a support member.

Water jet processing method

It is an object of the invention to provide a method for manufacturing an IC chip wherein a wafer is prevented from being damaged and the ease of handling thereof is improved so that the wafer can be appropriately processed into IC chips, even if a thickness of the wafer is extremely reduced to approximately 50 &#x3bc;m. The invention provides a method for manufacturing an IC chip comprising, at least: the step of securing a wafer to a support plate via a support tape having a surface layer comprising an adhesive (A) containing a gas generating agent for generating a gas due to stimulation and a surface layer comprising an adhesive (B); the step of polishing said wafer with securing said wafer to said support plate via said support tape; the step of adhering a dicing tape to said polished wafer; the step of providing said stimulation to said adhesive (A) layer; the step of removing said support tape from said wafer; and the step of dicing said wafer, which comprises adhering said surface layer comprising adhesive (A) to said wafer and adhering said surface layer comprising adhesive (B) to said support plate in the step of securing said wafer to said support plate via said support tape, providing said stimulation while uniformly sucking under reduced pressure the entirety of said wafer from the dicing tape side thereof, and then removing said support tape from said wafer in the step of providing stimulation to said adhesive (A) layer and in the step of removing said support tape from said wafer.

IC chip manufacturing method

A wafer support plate comprises a support surface on which a semiconductor wafer is supported, and a crystal orientation mark which indicates the crystal orientation of the semiconductor wafer. Even the semiconductor wafer thinned by grinding can be stably held on the support surface, and the crystal orientation can be recognized even when the outer periphery of the semiconductor wafer has chipped.

Wafer support plate

A semiconductor wafer is applied to a support disk via an intervening adhesive layer with the front side of the semiconductor wafer facing the adhesive layer, which is sensitive to a certain exterior factor for reducing its adhesive force; the semiconductor wafer is ground on the rear side; the wafer-and-support combination is applied to a dicing adhesive tape with the so ground rear side facing the dicing adhesive tape, which is surrounded and supported by the circumference by a dicing frame; the certain exterior factor is effected on the intervening adhesive layer to reduce its adhesive force; and the intervening adhesive layer and support disk are removed from the semiconductor wafer or chips without the possibility of damaging the same.

Production method for semiconductor chip

A flat-object holder can hold a flat object-and-frame assembly, and the holder has the flat object fixed to the frame with protection tape. The flat-object holder includes at least a flat object supporting area for fixedly holding the flat object via the protection tape by applying a suction force, and a frame fixing area for fastening the frame. The flat-object holder bearing the flat object-and-frame assembly can be fixedly held by a selected chuck table by applying a negative pressure to the flat object supporting area. The flat-object holder can transfer and put the flat object-and-frame assembly in a container. Thus, no matter how thin the flat object may be, it can be handled without the fear of breaking.

Flat-object holder and method of using the same

An alloy used for the production of a rare-earth magnet alloy, particularly the boundary-phase alloy in the two-alloy method is provided to improve the crushability. The Alloy consists of (a) from 35 to 60% of Nd, Dy and/or Pr, and the balance being Fe, or (b) from 35 to 60% of Nd, Dy and/or Pr, and at least one element selected from the group consisting of 35% by weight or less of Co, 4% by weight or less of Cu, 3% by weight or less of Al and 3% by weight or less of Ga, and the balance being Fe. The volume fraction of R,Fe,phase (Fe may be replaced with Cu, Co, Al or Ga) is 25% or more in the alloy and the average size of an R,Fe,phase is 20 &mgr;m or less. The alloy can be produced by a centrifugal casting at an average accumulating rate of melt at 0.1 cm/second or less.

Alloy used for production of a rare-earth magnet and method for producing the same

An alloy used for the production of a rare-earth magnet alloy, particularly the boundary-phase alloy in the two-alloy method is provided to improve the crushability. The alloy consists of (a) from 35 to 60% of Nd, Dy and/or Pr, 1% or less of B, and the balance being Fe, or (b) from 35 to 60% of Nd, Dy and/or Pr, 1% or less of B, and at least one element selected from the group consisting of 35% by weight or less of Co, 4% by weight or less of Cu, 3% by weight or less of Al and 3% by weight or less of Ga, and the balance being Fe. The total volume fraction of R.sub.2 Fe.sub.17 and R.sub.2 Fe.sub.14 B phases (Fe may be replaced with Cu, Co, Al or Ga) is 25% or more in the alloy. The average size of each of the R.sub.2 Fe.sub.17 and R.sub.2 Fe.sub.14 B phases is 20 .mu.m or less. The alloy can be produced by a centrifugal casting at an average accumulating rate of melt at 0.1 cm/second or less.

Alloy used for production of a rare-earth magnet and method for

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Tokyo, Japan

Koichi Yajima