Hitachi, Ltd.

Koichi Wajima

Tsutomu Yatsuo

Tatsuya Kamei

Yoshio Terasawa

Katsumi Akabane

Yasuhiko Ikeda

Isao Kojima

Soushi Suzuki

Yoshikazu Takita

A semiconductor controlled rectifier comprises a semiconductor substrate having four layers of alternate n- and p-type conductivities and includes two main surfaces one of which is formed of the exposed surface of first and second layers and the other of which is formed of the exposed surface of a fourth layer. A gate electrode of a rectangular shape is disposed on the second layer on the one main surface and a cathode electrode is disposed on the first layer so as to extend along at least two sides of the rectangular gate electrode. The cathode electrode portion extending along the short side of the rectangular gate extends slightly beyond a p-n junction defined between the first and second layers, so as to be in ohmic contact with the second layer.

Semiconductor controlled rectifier with configured cathode to eliminate

A diode-integrated thyristor comprising a region having a function of a thyristor and a region having a function of a diode which are integrated in the same semiconductor substrate and whose rectifying directions are opposite to each other, the carriers in the region having the function of a diode having a longer life time than the carriers in the region having the function of a thyristor.

Diode-integrated thyristor

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Hitachi, Japan

Koichi Wajima