Ngk Insulators, Inc.

Koichi Umemoto

Ryusuke Ushikoshi

Yusuke Niori

Kazuhiro Nobori

Atsushi Sakon

Hiroshi Nemoto

Hiromichi Kobayashi

Yusuke Niiori

Shinji Kawasaki

Osamu Imai

Shinji Yamaguchi

Masahiro Murasato

Toshihiko Honda

Kenji Kawabata

A plasma generating electrode device including a substrate,made of a dense ceramic, and an electrode,buried in said substrate,wherein said electrode,is isolated from a setting face of said substrate,and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer,is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode,is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.

Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof

A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free, joint face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.

Plasma-generating electrode device, an electrode-embedded article, and a

Aluminum nitride sintered body and its production method

A ceramic heater includes a substrate made of aluminum nitride, a resistive heating element buried in the substrate and made of a metal having a high melting point, and terminals electrically connected to the resistive heating element and buried in said substrate. The terminals are made of a metal having a high melting point and a coefficient of thermal expansion not smaller than that of the substrate. The metal of the resistive heating element has a coefficient of thermal expansion not smaller than that of the substrate. The coefficient of thermal expansion of each of the terminals and the resistive heating element is in a range from 5.0.times.10.sup.-6 /.degree.C. to 8.3.times.10.sup.-6 /.degree.C.

Ceramic heaters and heating devices using such ceramic heaters

A ceramic heater composed of a ceramic substrate and a resistant heating element embedded within the ceramic substrate along a predetermined planar pattern is obtained by holding a convolution of a spiral-coiled high melting metallic filament in the above predetermined planar pattern and heat-treating the convolution at a temperature not higher than a primary recrystallization commencement temperature of the high melting metal under a non-oxidative atmosphere to provide the resistant heating element, embedding the resulting resistant heating element within a ceramic shaped body, and then, sintering the ceramic shaped body. In a preferred embodiment, the resistant heating element is a convolution of a spiral coil, the number of coils per a unit length of said convolution is set at a predetermined value in each of defined domains of the ceramic heater, and when the number of coils per a unit length of the convolution is determined, the relation of the maximal value, the minimal value and the mean value, of all the determined numbers of coils in the above domains, satisfies the formula:

Apparatuses for heating semiconductor wafers, ceramic heaters and a

Ceramic articles such as ceramic heaters, ceramic static chucks or the like include a substrate 1, a functional member such as a resistance heating element 2 or the like embedded in the substrate 1, a terminal 12 and a conductive wire 5A arranged therebetween. The conductive wire 5A is connected and fixed to the terminal 12, and a connection portion C between the conductive wire 5A and the terminal 12 is continued thereto. Alternatively, a post portion formed on the terminal 12 is extended in a direction crossing to a thickness direction of a plate-like substrate 1, and an end portion of the resistance heating element 2 is wound around the post portion. Alternatively, an end portion of the resistance heating element 2 is connected to the terminal 3 at a center portion in a thickness direction of the plate-like substrate 1.

Ceramic articles

An excellent corrosion resistant member of a ceramic heater for semiconductor production apparatuses to be exposed to a halogen series corrosive gas is provided. The corrosion resistant member uses one of an aluminum nitride and alumina sintered body as a substrate. A ceramic heater using the corrosion resistive member is also disclosed as well as a semiconductor heating device using the ceramic heater.

Corrosion-resistant member for chemical apparatus using halogen series

A wafer heating apparatus can be obtained which prevents formation of a local gap caused by deflection or distortion, and the like, of a wafer at the time of heating the wafer so as to improve production yield of the heat treatment of the wafers. The apparatus includes a ceramic substrate, a heat generating resistive element embedded in the ceramic substrate, a film electrode formed on a front surface of the ceramic substrate, and a ceramic dielectric layer formed on the front surface of the ceramic substrate to coat the film electrode. A direct current power source is provided to generate Coulomb's force between the wafer and the film electrode via the dielectric layer to attract the wafer to a wafer-attracting surface of the dielectric layer, while heating the wafer attracted to the wafer-attracting surface by energizing the heat generating element through application of an electric current therethrough. A method of producing the wafer heating apparatus is also disclosed.

Wafer heating apparatus and with ceramic substrate and dielectric layer

A voltage non-linear type sintered resistor is disclosed, which is produced by reacting, under heating, a mixture consisting essentially of zinc oxide as a main component, and an additive exhibiting voltage non-linearity and silicon oxide as auxiliary components. The silicon oxide is contained in an amount of 0.3 to 4.0 mol % with respect to the sintered resistor when calculated as SiO.sub.2, and the average particle diameter of crystalline grains of the zinc oxide constituting the sintered body is not more than 6 .mu.m.

Voltage non-linear type resistors

In case of manufacturing a voltage non-linear resistor, a sintering process is divided into two completely separate steps, i.e. primary and secondary sinterings. The primary sintering is carried out under a reduced pressure and the second sintering is conducted under an atmospheric pressure with a sufficient amount of oxygen. The primary sintering is effects such that the relative density and open porosity of the primarily sintered body are 85% or more and 1% or less, respectively. The secondary sintering removes to a large extent, voids existing in the body and, oxidation of the body is sufficiently effected. Therefore, the finally sintered body has a high density, a large surge withstanding capability, and a high non-linearity index.

Highly densified voltage non-linear resistor and method of manufacturing

A voltage non-linear resistor having lightning discharge current withstanding capability, switching surge current withstanding capability, and voltage non-linear index .alpha., including a resistor element body consisting essentially of zinc oxide, and a side highly resistive layer composed of a zinc silicate phase consisting essentially of Zn.sub.2 SiO.sub.4 and a spinel phase consisting essentially of Zn.sub.7 Sb.sub.2 O.sub.12 arranged on a side surface of the resistor element body, can be attained, having a porosity of the resistor element body of 2% or less, zinc silicate particles existing continuously in the side highly resistive layer, and a porosity of 10% or less in a region of the side highly resistive layer within 30 .mu.m or less from the resistor element body. A method of producing the voltage non-linear resistor is also provided.

Growing community of inventors

Toyota, Japan

Koichi Umemoto