Nec Corporation

Tohoku University

Koichi Terashima

Akihiro Kirihara

Masahiko Ishida

Ryohto Sawada

Kiyoshi Takeuchi

Koichi Takeda

Masahiro Nomura

Hitoshi Wakabayashi

Masayasu Tanaka

Shigeharu Yamagami

Yuma Iwasaki

Koji Watanabe

Katsuhiko Tanaka

Toru Tatsumi

Eiji Saitoh

Atsushi Ogura

Risho Koh

Yasutomo Omori

Ryo Iguchi

Yasuyuki Oikawa

Hiroko Someya

Masao Ono

Yuki Shiomi

A portable power supply according to one or more embodiments includes a combustion device () and a heating container () that retains an object to be heated, wherein at least a part of a portion of the heating container, the portion being directly heated by the combustion device, is provided with a magnetic metal plate () that has spontaneous magnetization and that generates electromotive force due to an anomalous Nernst effect induced by the heating, and wherein electrodes () for drawing power are provided. Thus, the heating container for generating electricity has a simple configuration, and furthermore the portable power supply is provided with both the heating container and the combustion device.

Portable power supply

A thermoelectric conversion element that has a power generation layer containing an iron-aluminum based magnetic alloy material containing equal to or more than 70 weight percent of iron and aluminum in total. The power generation layer generates an electromotive force, due to an anomalous Nernst effect that develops in the magnetic alloy material in response to a temperature gradient applied thereto, in a direction intersecting both the magnetization direction of the magnetic alloy material and the direction of the applied temperature gradient.

Thermoelectric conversion element

Provided are an exterior body and an abnormality detector capable of suppressing bulking even when a heat generation detection function is provided. The exterior body of an electronic device generates heat during operation and is characterized by being provided with a magnetic body that is at least a portion of the exterior body, that has spontaneous magnetization, and that generates an electromotive force by exhibiting an abnormal Nernst effect through heat generation of the electronic device, wherein an electrode for extracting power is provided to the magnetic body.

Exterior body, abnormality detector, and abnormality detection system

In order to enable the measurement of thermal property information about a subject, this thermal diffusion coefficient measuring device, which is used by contacting the surface of a living body, is provided with: a biological information sensor comprising a temperature sensor and a heat flux sensor; and a heating/cooling control means. The temperature sensor is provided at a position contacting the surface of the living body, and operates so as to detect skin temperature. The heat flux sensor is provided at a position contacting the surface of the living body, while being adjacent to the temperature sensor, and operates so as to detect heat flux on the surface of the living body. The heating/cooling control means enables the measurement of the temperature diffusion coefficient of a thermal resistance component that is present between the biological information sensor and a deep inner portion of the living body.

Thermal diffusion coefficient measuring device, and deep-body thermometer, deep-body temperature measuring device, and deep-body temperature measuring method using same

In order to determine information about the generation of heat in a bearing () in a simple manner, a bearing () includes an outer ring () secured to a securing member, and an inner ring () provided on the inside of the outer ring () and secured to a shaft that rotates in the circumferential direction relative to the securing member. A thermal flow sensor () is provided as a coating on a securing-side surface that includes the outer ring (), and generates a thermoelectromotive force including information about frictional heat generated with the rotation of the shaft.

Bearing with measurement function

A semiconductor device having SRAM cell units each comprising a pair of a first driving transistor and a second driving transistor, a pair of a first load transistor and a second load transistor, and a pair of a first access transistor and a second access transistor, wherein each of the transistors comprises a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulating film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; and the first and second driving transistors each have a channel width larger than that of at least either each of the load transistors or each of the access transistors.

Semiconductor device and manufacturing method thereof

The present invention relates to a semiconductor device including a Fin type field effect transistor (FET) having a protrusive semiconductor layer protruding from a substrate plane, a gate electrode formed so as to straddle the protrusive semiconductor layer, a gate insulating film between the gate electrode and the protrusive semiconductor layer, and source and drain regions provided in the protrusive semiconductor layer, wherein the semiconductor device has on a semiconductor substrate an element forming region having a Fin type FET, a trench provided on the semiconductor substrate for separating the element forming region from another element forming region, and an element isolation insulating film in the trench; the element forming region has a shallow substrate flat surface formed by digging to a depth shallower than the bottom surface of the trench and deeper than the upper surface of the semiconductor substrate, a semiconductor raised portion protruding from the substrate flat surface and formed of a part of the semiconductor substrate, and an insulating film on the shallow substrate flat surface; and the protrusive semiconductor layer of the Fin type FET is formed of a portion protruding from the insulating film of the semiconductor raised portion.

Semiconductor device with fin-type field effect transistor and manufacturing method thereof.

A semiconductor device comprising a first semiconductor region and a second semiconductor region,

Semiconductor device and method for manufacturing same

A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.

Growing community of inventors

Tokyo, Japan

Koichi Terashima