Kansai Paint Company, Ltd.

Disco Corporation

Toyo Seikan Kaisha, Ltd.

Koichi Tamura

Hiroshi Sasaki

Hideo Kogure

Koichi Yajima

Heihachi Murase

Hideki Masuda

Shinichi Namioka

Yusuke Obu

Hideki Matsuda

Masatoshi Nanjo

Masahiko Kitamura

Kashiko Kawai

Takahiro Hidaka

Naoki Horike

Takahiro Higuchi

Keisuke Naruse

Kouji Takezoe

Akito Ichikawa

A composition for forming a gas-barrier material, comprising a polycarboxylic acid-type polymer (A) and at least a bifunctional alicyclic epoxy compound (B). The composition for forming a gas-barrier material features excellent gas-barrier property, retort resistance and flexibility, can be cured at a low temperature in a short period of time without affecting the plastic base material, and contributes to improving the productivity.

Composition for forming gas-barrier material, gas-barrier material, a method of producing the same, and gas-barrier packing material

In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove the semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force that is reduced upon exposure to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer. Thereafter, the support substrate and adhesive layer is removed from the surface of the semiconductor wafer, leaving the semiconductor wafer held by the tape and frame. The semiconductor wafer supported by the tape and frame is cut at streets into individual semiconductor chips.

Method for manufacturing semiconductor chip

According to the present invention, there is provided a covering composition for optical fiber comprising (A) an unsaturated polyester oligomer having substantially two or more (meth)acryloyl group in a molecule wherein a glass transition temperature of a cured substance thereof is 100 to 350&#xb0; C.; (B) at least one oligomer selected from the group consisting of the following components: (B-a) epoxy modified (meth)acrylate oligomer, (B-b) polyether polyol modified (meth)acrylate oligomer, and (B-c) urethane polyether polyol modified (meth)acrylate or urethane polyester polyol modified (meth)acrylate; and (C) a photopolymerization initiator, as essential components. The cured material has highly elasticity and is superior in the heat stability, and as a result, the present invention provides the superior covered optical fiber with well balanced heat stability of the optical transmission properties and flexibility.

Covering composition for optical fiber and covered optical fiber

Anti-icing composition and method of preventing icing

Growing community of inventors

Kanagawa, Japan

Koichi Tamura