Tokyo Electron Limited

Koichi Takatsuki

Yoshihiro Sato

Toshio Nakanishi

Shigenori Ozaki

Seiji Matsuyama

Hikaru Adachi

Tadahiro Ishizaka

Takashi Suzuki

Atsushi Gomi

Toshio Hasegawa

Yasuhiko Kojima

Kohei Kawamura

Hidenori Miyoshi

Hiroshi Sone

Hiroyuki Takahashi

Takashi Akahori

Tatsuo Hirasawa

Yasuhiro Oshima

Yusuke Suzuki

Kanto Nakamura

Chiaki Yasumuro

Shuuichi Ishizuka

Gishi Chung

Mikio Suzuki

Toru Kitada

Yasunobu Suzuki

Atsushi Shimada

Hikaru Yoshitaka

Shigeo Ashigaki

Yoichi Inoue

Syoichi Abe

Keisuke Sato

There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.

Surface processing method and processing system

A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Deposition device and deposition method

That surface of an electrode platewhich is opposite to a susceptorhas a projection shape. The electrode plateis fitted in an openingof shield ringat a projection. At this time, the thickness of the projectionis approximately the same as the thickness of the shield ringAccordingly, the electrode plateand the shield ringform substantially the same plane. The major surface of the projectionhas a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plateis formed of, for example, SiC.

Plasma process device and plasma process method

According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.

Plasma processing method

In a substrate processing method, a substrate to be processed is mounted on a mounting table in a processing chamber of a substrate processing apparatus, and while heating the substrate by a heating unit through the mounting table to a processing temperature of 700&#xb0; C. or higher, the substrate is processed. The substrate to be processed is loaded into the processing chamber, a first preliminary heating is performed until the substrate reaches a prescribed temperature while being mounted on the mounting table. Then, substrate supporting pins of the mounting table are elevated, and a second preliminary heating is performed in a state where the substrate is held on the substrate supporting pins. Then, the substrate supporting pins are moved down to mount the substrate on the mounting table and a process such as plasma oxidation is performed thereon.

Substrate processing method and substrate processing apparatus

According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

Plasma processing method and computer storage medium

Growing community of inventors

Nirasaki, Japan

Koichi Takatsuki