Sony Corporation

Kabushiki Kaisha Toshiba

Fuji Xerox Co., Ltd.

Koichi Sugiyama

Tomoki Inoue

Etsurou Sakamoto

Tsuneo Ogura

Hideaki Ninomiya

Masakazu Yamaguchi

Hisato Shima

Kazuya Nakayama

Noriko Kotabe

Ichiro Omura

Shigeo Tanaka

Makoto Sato

Harumi Kawamura

Hiroshi Yamazaki

Yoshio Osakabe

Akira Katsuyama

Yasuo Kusagaya

Susumu Yoshino

Atsushi Murakoshi

Hiromichi Ohashi

Yuka Ishihara

Masanobu Tsuchitani

Junichi Tsukamoto

Hideki Nozaki

Atsuhiko Eguchi

Tomokazu Domon

Suzuo Saito

Jun Igarashi

Noboru Motoyoshi

Masahiro Okita

Dai Sato

Yoko Sakiyama

Akihiro Konno

Simon Eicher

Tatsuo Naijo

Teruo Sakai, Legal Representative

Fei Zeng

Hideaiki Ninomiya

[Object] To provide an electronic apparatus that can prevent defects caused by a seepage of ultraviolet curable resin, a method of bonding the electronic apparatus, and a substrate laminate. [Solving Means] An electronic apparatus according to an embodiment of the present technology includes a translucent substrate, a display panel, a first bond layer, and a guard. The translucent substrate has a first surface, a second surface opposite to the first surface, and a frame-shaped coating arranged at a periphery of the first surface. The display panel has a display surface faced to the first surface. The first bond layer bonds the first surface and the display surface together, coats an inner periphery of the coating, and is made of a cured product of light-curable resin. The guard is arranged on the coating along at least a part of a periphery of the first bond layer and has a structural surface with lower wettability to the light-curable resin than that of the coating. [Selected Drawing]

Electronic apparatus, method of producing electronic apparatus, and substrate laminate

A video apparatus includes signal control unit that outputs an image signal in a plurality of formats. An interface unit connects the video apparatus to a computer, and an interface control unit controls transmission of the image signal to the computer. When the video apparatus has been connected to the computer through the interface unit, when the format of the image signal is switched, the interface control unit controls the interface unit so that the connection to the computer is disconnected without changing a physical connecting state. After the elapse of a predetermined period, the video apparatus is connected to the computer again without changing the physical connecting state.

Video apparatus, video output control method, and reproduction control method

A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and the second base layers.

Semiconductor device

Copying, dubbing or reproducing copyrighted digital data can be inhibited or restricted to properly protect a copyright. AV data recorded on a pre-recorded tape is output from a reproducing unit of a first digital VCR with protective information indicating whether the copy of the AV data is inhibited or not. The protective information is input with the A/V data to a second digital VCR. Copy permission information of a blank tape loaded in the second digital VCR is discriminated and the second digital VCR records the AV data supplied from the first digital VCR based on the protective information and the copy permission information.

Recording medium and apparatus for protecting copyrighted digital data

A display device includes a display section configured to perform display and provided with a display screen; communicating sections configured to perform communication to receive pieces of content data from supply devices, respectively; and a controller configured to cause the received pieces of content data to be simultaneously displayed on corresponding divided areas of the display screen and to control the communicating sections to transmit, to the supply devices. The notification indicates that the pieces of content data are simultaneously displayed on the corresponding areas.

Display device, display method, supply device, supply method, storage medium, and control system for controlling the display of information provided from a supply device

A semiconductor device includes a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a trench formed from the surface of the barrier layer to such a depth as to reach a region in the vicinity of an interface between the barrier layer and the base layer, a gate electrode formed in the trench via a gate insulating film, a contact layer of a second conductivity type selectively formed in a surface portion of the barrier layer, a source layer of the first conductivity type selectively formed in the surface portion of the barrier layer so as to contact the contact layer and a side wall of the gate insulating film in the trench, and a first main electrode formed so as to contact the contact layer and the source layer.

Power semiconductor device

A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.

Semiconductor device having rectifying action

A power semiconductor device includes: a semiconductor layer having a trench extending along a first direction in a stripe configuration; a gate electrode buried in the trench for controlling a current flowing in the semiconductor layer; and a gate plug made of a material having higher electrical conductivity than the gate electrode, the gate plug having the stripe configuration and being connected to the gate electrode along the first direction. The semiconductor layer includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided partially in an upper face of the first semiconductor layer; a third semiconductor layer of the first conductivity type provided partially on the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type provided on a lower face of the first semiconductor layer.

Power semiconductor device with a plurality of gate electrodes

According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes being controlled by a control signal which is input between the control electrode and the second main electrode; and a capacitor formed by providing an insulating layer between the second main electrode and the control electrode of the semiconductor element.

Semiconductor device and capacitance regulation circuit

A high-breakdown-voltage semiconductor apparatus is provided, wherein when a gate capacitance of that portion of a gate electrode, under which a channel is formed, is Cg[F], a resistance in a channel length direction of that portion of the gate electrode, under which the channel is formed, is Rg [&#x3a9;], a threshold voltage, which is to be applied to the gate electrode and application of which permits flow of a drain current, is Vth [V], a voltage to be applied to the gate electrode to cut off the drain current is Voff [V], and a ratio of increase in the drain voltage per unit time at the time of cutting off the drain current is dV/dt [V/s], the following condition is satisfied:|Vth&#x2212;Voff|&#x2267;0.5&#xb7;Cg&#xb7;Rg&#xb7;(dV/dt)

High-breakdown-voltage semiconductor apparatus

A high-breakdown-voltage semiconductor apparatus is provided, wherein when a gate capacitance of that portion of a gate electrode, under which a channel is formed, is Cg [F], a resistance in a channel length direction of that portion of the gate electrode, under which the channel is formed, is Rg [&#x3a9;], a threshold voltage, which is to be applied to the gate electrode and application of which permits flow of a drain current, is Vth [V], a voltage to be applied to the gate electrode to cut off the drain current is Voff [V], and a ratio of increase in the drain voltage per unit time at the time of cutting off the drain current is dV/dt [V/s], the following condition is satisfied:|Vt&#x2212;Voff|&#x2267;0.5&#xb7;Cg&#xb7;Rg&#xb7;(dV/dt).

A semiconductor device comprises a first base layer of a first conductive type which has a first surface and a second surface; a second base layer of a second conductive type which is formed on the first surface; first and second gate electrodes which are formed by embedding an electrically conductive material into a plurality of trenches via gate insulating films, the plurality of trenches being formed such that bottoms of the trenches reach the first base layer; source layers of the first conductive type which are formed on a surface area of the second base layer so as to be adjacent to both side walls of the trench provided with the first gate electrode and one side wall of the trench provided with the second gate electrode, respectively; an emitter layer of the second conductive type which is formed on the second surface; emitter electrodes which are formed on the second base layer and the source layers; a collector electrode which is formed on the emitter layer; and first and second terminals which are electrically connected to the first and second gate electrodes, respectively.

Disclosed is an insulated gate semiconductor device including a first region having a gate electrode region and a first insulating film region surrounding the gate electrode region; a semiconductor region which includes a channel forming region and is disposed to oppose the gate electrode region with the first insulating film region between them; and a second region which has a conductor region buried in a semiconductor region not including the channel forming region disposed to oppose the gate electrode region with the first insulating film region between them, and has a second insulating film region which separates the conductor region from the semiconductor region.

Insulated gate semiconductor device with small feedback capacitance and manufacturing method thereof

This disclosure concerns a semiconductor device that includes a first base layer; second base layers provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers; an emitter layer formed on a surface of the second base layers; a collector layer provided below a second surface of the first base layer, an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being electrically isolated from the emitter layer and the second base layers, wherein the space section includes a semiconductor layer being deeper than the second base layers.

Disclosed is a power semiconductor device, including: a gate electrode having a cross section having a length in a vertical direction, and having a shape extending in a direction orthogonal to the cross section; a gate insulating film surrounding the gate electrode; an n-type source layer positioning to face the gate electrode via the gate insulating film; a p-type base layer adjacent to the n-type source layer and positioning to face the gate electrode via the gate insulating film; an n-type base layer adjacent to the p-type base layer and positioning to face the gate electrode via the gate insulating film without being in contact with the n-type source layer; and a main electrode being in contact with the n-type source layer and the p-type base layer with plural lateral planes extending in a direction crossing the direction in which the gate electrode is extending.

Growing community of inventors

Kanagawa, Japan

Koichi Sugiyama