Sony Semiconductor Solutions Corporation

Sony Corporation

Koichi Sejima

Nobutoshi Fujii

Masaki Haneda

Suguru Saito

Shinichi Miyake

Koichiro Saga

Kenya Nishio

Takashi Fukatani

Provided is a semiconductor device with a wiring layer including a plurality of wiring lines extending in a first direction; a first insulating film stacked on the wiring layer that has a gap region between the plurality of wiring lines adjacent to each other in a second direction; and a second insulating film between the plurality of wiring lines and the first insulating film. Each wiring line includes a metal film and a barrier metal layer. The metal film includes an electrically conductive material including a first metal. The barrier metal layer partially covers surroundings of the metal film in a cross section orthogonal to the first direction and includes a material including a second metal. The second metal prevents diffusion of the first metal. The second insulating film includes an insulating material and covers a portion of the metal film. The insulating material prevents diffusion of the first metal.

Wiring structure, method of manufacturing the same, and imaging device

An apparatus and method enabling a reduction in a resistance of a conductive path electrically connecting an upper substrate and a lower substrate. The apparatus includes a first semiconductor layer with element formation regions disposed adjacent to one another via element isolation regions, each of the element formation regions having a first active element, contact regions on an element isolation region side of a front layer portion of the element formation regions, conductive pads connected to the contact regions and extending across the element isolation region, a first insulating layer, a second semiconductor layer on the first insulating layer and having a second active element, a second insulating layer covering the second semiconductor layer, and conductive plugs extending from the second insulating layer to the conductive pad, the conductive plugs including a material identical to a material of the conductive pad and formed integrally with the conductive pad.

Semiconductor apparatus and method for manufacturing the same

An imaging unit including first semiconductor substrate that includes a photoelectric converter, a heat conductive wiring line provided in contact with the first semiconductor substrate, and a cooling device that controls a temperature of the photoelectric converter via the heat conductive wiring line.

Imaging unit

A nonvolatile memory device according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; a first magnetic material layer and a second magnetic material layer provided between the first electrode and the second electrode; an insulator layer provided between the first magnetic material layer and the second magnetic material layer; and an oxidized magnetic material film provided around the first magnetic material layer.

Growing community of inventors

Kanagawa, Japan

Koichi Sejima