Kabushiki Kaisha Toshiba

Canon Kabushiki Kaisha

Nippon Steel Corporation

Nippon Steel Sumitomo Metal Corporation

Nippon Oil Corporation

Chiba Institute of Technology

Sony Corporation

Koichi Sato

Masami Ikeda

Masaaki Mizumura

Takashi Watanabe

Akio Saito

Hiroshi Sugitani

Kazuaki Masuda

Akira Goto

Nobuyuki Kuwabara

Yoshifumi Hattori

Tsuyoshi Orikasa

Asao Saito

Masaaki Izumida

Shintaro Yamanaka

Yasunobu Miyazaki

Toshio Kashino

Tsutomu Abe

Seiichiro Karita

Yoshiaki Nakazawa

Masahiro Kubo

Takashi Suzuki

Hiroyuki Fujita

Norikazu Ito

Teruo Arashima

Kentaro Watanabe

Hideo Saikawa

Makiko Kimura

Tohru Yoshida

Jun Kawai

Atsuhiro Kumagai

Soshi Fujita

Yukihisa Kuriyama

Kunihiko Maeoka

Tsuguhiro Fukuda

Shigeaki Tanaka

Tohru Okada

Manabu Wada

Seiji Furusako

Toshiki Nonaka

Yoshifumi Kobayashi

Yoshihiro Suwa

Toru Yonebayashi

Yasunori Iwasa

Manabu Naruse

Teruo Ito

Tsutomu Yamamoto

Satoshi Katsuo

Ryuichi Nishimura

Tomohisa Shiga

Jun Yoshikawa

Satoshi Yoneya

Masakazu Yoshimoto

Fuminori Watanabe

Naoyuki Shigyo

Hiroshi Nakagomi

Satoshi Yutani

Takashi Yasutomi

Takashi Ohba

Takashi Matsuno

Takayuki Hiraoka

Tasuku Zeniya

Kazuhiro Tsuji

Hitoshi Nikaido

Shintaro Mizutani

Gentaro Okayasu

Kunio Takahashi

Daiki Kamada

Kenichiro Minami

Osamu Kiyomiya

Riichiro Yoshida

Tatsuaki Yamaguchi

Yoji Shimizu

A cold-rolled steel according to the present invention has a predetermined chemical composition, satisfies (5&#xd7;[Si]+[Mn])/[C]&#x3e;10 when [C] is the amount of C by mass %, [Si] is the amount of Si by mass %, and [Mn] is the amount of Mn by mass %, includes 40% to 95% ferrite and 5% to 60% martensite in area fraction, and optionally further includes 10% or less pearlite in area fraction, 5% or less retained austenite in volume fraction, and less than 40% bainite in area fraction. The total of the area fraction of ferrite and the area fraction of martensite is 60% or more, the hardness of martensite measured with a nanoindenter satisfies H2/H1&#x3c;1.10 and &#x3c3;HM&#x3c;20.

Cold-rolled steel sheet

A method for producing a metal sheet with raised lines uses a rolling mill including roll stands. In a preparing step, a grooved roll is prepared, the grooved roll including grooves. In a choosing step, a stand at least one stage before the last stand is chosen. In an incorporating step, the grooved roll is incorporated in as an upper roll of the chosen, specified stand. In a forming step, a workpiece is formed into a metal sheet with raised lines formed corresponding to the respective grooves. In the forming step, a maximum rolling reduction achieved by rolls of the specified stand is set to a provisional value that is lower than a required value. After the leading edge of the workpiece reaches the stand next to the specified stand, the maximum rolling reduction of the specified stand is changed to the required value.

Method for producing metal sheet with raised lines, metal sheet with raised lines, and structural component

A producing method of the press formed product includes a preparation step of preparing a metal sheet as a starting material; and a press working step of performing press working on the starting material. The press working step includes: during a time period from when pushing-in of the starting material into the die by the punch is started or immediately thereafter until the pushing-in of the punch with respect to the die reaches a predetermined distance short of a bottom dead point for the pushing-in, holding the pad at a position distant from the punch by the predetermined distance; when the pushing-in of the punch with respect to the die reaches the predetermined distance short of the bottom dead point, receiving the pad in the die; and continuing the pushing-in of the punch with respect to the die and the pad to the bottom dead point.

Producing method, producing apparatus and producing equipment line of press formed product

A hot-stamped steel according to the present invention has a predetermined chemical composition, satisfies (5&#xd7;[Si]+[Mn])/[C]&#x3e;10 when [C] is the amount of C by mass %, [Si] is the amount of Si by mass %, and [Mn] is the amount of Mn by mass %, includes 40% to 95% ferrite and 5% to 60% martensite in area fraction, and optionally further includes 10% or less pearlite in area fraction, 5% or less retained austenite in volume fraction, and less than 40% bainite in area fraction. The total of the area fraction of ferrite and the area fraction of martensite is 60% or more, the hardness of martensite measured with a nanoindenter satisfies H2/H1&#x3c;1.10 and &#x3c3;HM&#x3c;20, and TS&#xd7;&#x3bb; which is product of tensile strength TS and hole expansion ratio &#x3bb; is 50000 MPa&#xb7;% or more.

Hot-stamped steel, cold-rolled steel sheet and method for producing hot-stamped steel

In a manufacturing method of sheared components, the shearing including a process of fixing a workpiece to a die, and a process of punching the workpiece by bringing a punch and the die relatively close to each other, is performed a plurality of times, and when a shearing sequence is started, the shearing is performed by using a punch including a first cutting edge having a first tip end surface which opposes the workpiece, and a first retracting surface which retracts from the first tip end surface considering an approaching direction to the die as a standard; and a die including a second cutting edge having a second tip end surface which opposes the workpiece, and a second retracting surface which retracts from the second tip end surface considering an approaching direction to the punch as a standard.

Manufacturing method and manufacturing device of sheared components

An electrostatic discharge protective circuit including an ESD protective circuit which has a trigger terminal and forms a discharge path from a first node to a second node when trigger signals are supplied to the trigger terminal, a trigger circuit included in a circuit to be protected which is connected between the first and second nodes, the trigger circuit having a first MOS device, and which functions as a part of the circuit to be protected at the time of normal operation when ESD voltage is not applied, and forms a conductive path between a drain and source of the MOS device when ESD voltage of a predetermined value or more is applied to the first node during a normal operation, and supplying the trigger signals to the trigger terminal of the ESD protective circuit when the first MOS device becomes conductive.

Electrostatic discharge protective circuit and semiconductor integrated circuit using the same

A semiconductor device includes a thyristor, trigger circuit and surge detection/leakage reduction circuit. The anode of the thyristor is connected to a first terminal and the cathode thereof is connected to a second terminal. The trigger circuit is configured to fire the thyristor when surge voltage is applied to the first terminal. The surge detection/leakage reduction circuit is provided between the gate of the thyristor and the second terminal and configured to interrupt current flowing from the trigger circuit to the second terminal in the normal operation mode and set trigger voltage which is used to fire the thyristor in cooperation with the trigger circuit at the surge voltage application time.

Semiconductor device having electrostatic destruction protection circuit using thyristor as protection element

An electrostatic protection circuit including: a first power supply terminal; a second power supply terminal; an input-output terminalfor an external connection; a P-type MOSFET for a bufferfor pulling up input and output to a high-level potential; an N-type MOSFET for the bufferfor pulling down the input and output to a low-level potential; a rectifying elementconnected between the first and second power supply terminals; a detectorfor comparing the potential of the input-output terminalto the potential of the first power supply terminalto detect whether or not an electrostatic surge is flowing in; and controllersand, wherein the controllersandcontrol a gate potential of the N-type MOSFETfor the buffer when the detectordetects inflow of the electrostatic surge and turn off the N-type MOSFETfor the buffer. Discharge of the electrostatic surge is performed through a parasitic bipolar junction transistorformed on the N-type MOSFET

Electrostatic protection circuit

There is provided a process for producing an aromatic hydroxycarboxylic acid which is capable of suppressing the formation of by-products and enhancing the selectivity of the intended product and is free from any purifying step. The process is characterized in that it is obtained by reacting an alkali metal salt of an aromatic hydroxy compound and carbon dioxide in a non-proton polar solvent in the presence of a solid basic catalyst.

Process for producing aromatic hydroxycarboxylic acids

In a synchronization control circuit according to the present invention, an image can smoothly be switched to another without distortion due to switching between sync signals to be displayed. The phases of sync signals of input video signals A and B are compared with each other in a phase difference detecting section, and the sync signal of one (B) of the signals is matched with that of the other signal A. When signal A is switched to signal B, an image is displayed in response to the corrected sync signal of signal B (corresponding to the sync signal matched with that of signal A). As a result, the synchronization state of signal A is maintained on a display screen, and the image can smoothly be switched without distortion.

Synchronization control circuit

An ink jet recording apparatus includes a liquid passage for ejection of ink; a liquid chamber for supplying ink to the passage; a device for mounting the recording head on the ink jet recording apparatus at an angle not more than 45 degrees relative to the horizontal plane; wherein the chamber has an internal surface which is slanted in a direction from an ink inlet thereof toward the liquid passage at the angle of 5-40 degrees relative to an extension of the liquid passage.

Ink jet recording head with ink chamber having slanted surfaces to aid

A digital-to-analog conversion circuit includes a first reference voltage generation circuit for generating a plurality of first reference voltages, a plurality of second reference voltage generation circuits for generating a plurality of second reference voltages created by dividing a difference in potential between adjacent two of the first reference voltages, a first selective control circuit for, upon receiving a first digital input signal group, selecting one of the first reference voltages and applying the selected one to a specified one of a plurality of signal lines during a first period, and selecting all of second reference voltages generated in one of the plurality of second reference voltage generation circuits and applying all the selected second reference voltages to signal lines other than the specified signal line, respectively, during a second period succeeding the first period, and a second selective control circuit for, upon receiving a second digital input signal group, applying a voltage of the specified signal line to an analog output terminal during the first period, and applying voltages of the signal lines other than the specified signal line to the analog output terminal during the second period.

Digital-to-analog conversion circuit and analog-to-digital conversion

An ink jet head includes a first member provided with an ejection energy generating element for generating energy contributable to ejection of ink; a second member provided with a recess for defining an ink passage with a trapezoidal cross-section by being coupled with the first member, corresponding to the ejection energy generating element; and a third member provided with an ejection outlet which communicates with the ink passage and through which the ink is ejected.

Ink jet head having trapezoidal ink passages, ink cartridge and

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Yokohama, Japan

Koichi Sato