Toshiba Memory Corporation

Koichi Sakata

Fumitaka Arai

Satoshi Nagashima

Keisuke Kikutani

Yuta Watanabe

Toshiyuki Iwamoto

Tatsuya Kato

Katsuhiro Sato

Hiroaki Ashidate

Satoshi Nakaoka

Kazutaka Suzuki

Kohei Sakaike

A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

Semiconductor storage device and method of manufacturing the same

A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.

Semiconductor memory device and method for manufacturing same

A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.

Semiconductor memory device

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Yokkaichi, Japan

Koichi Sakata